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Oshima, Takeshi; Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oi, Akihiko; Kawakita, Shiro*; Ito, Hisayoshi; Matsuda, Sumio*
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.113 - 116, 2002/10
The effects on proton and electron irradiateions of the characteristics of InGaP/GaAs/Ge triple junction designed for terrestrial application were studied. The solar cells used in this study has a 1% In-contained GaAs middle sub-cell, and their efficiency is more than 30 % under AM1.5, which is the highest efficiency of all solar cells in the world.As the results of 1MeV-electron and 10 MeV-proton irradiation, terrestrial triple-junction sole cells were found to have the same radiation resistance as space single junction GaAs solar cells, although terrestrial triple-junction solar cells is not stronger than space triple-junction solar cells made in USA. As the result of proton energy dependence of the electrical characteristics and quantum efficiency, the strong degradation of the GaAs middle cell was observed.
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.73 - 76, 2002/10
no abstracts in English
Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Ito, Hisayoshi
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.161 - 166, 2002/10
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Mori, Hidenobu*; Ito, Hisayoshi
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.155 - 160, 2002/10
no abstracts in English