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Journal Articles

J-PARC status, nuclear and particle physics

Sato, Susumu

AIP Conference Proceedings 1336, p.560 - 564, 2011/06

 Times Cited Count:1 Percentile:49.8

Journal Articles

Features of the J-PARC linac

Kobayashi, Tetsuya

AIP Conference Proceedings 1336, p.29 - 32, 2011/06

 Times Cited Count:0 Percentile:0.01

Japan Proton Accelerator Research Complex (J-PARC) will be one of the highest intensity proton accelerators in the world aiming to realize 1 MW class of the beam power. The accelerator consists of a 400-MeV linac, a 3-GeV rapid-cycling synchrotron (RCS) and a main ring synchrotron (MR), and the accelerated beam is applied to several experimental facilities. The acceleration field error in all of them should be within $$pm$$1% in amplitude and $$pm$$1 degree in phase because the momentum spread of the RCS injection beam is required to be within $$pm$$0.1%. For the cavity field stabilization, a high-stable optical signal distribution system is used as the RF reference, and sophisticated digital feedback and feed-forward system is working well in the low level RF control system. Consequently the providing beam to the RCS is very stable, and the beam commissioning and the experiments of the application facilities have been progressed steadily.

Journal Articles

Theoretical approach of the reduction of chromatic and spherical aberrations in an acceleration lens system for hundreds of keV gaseous ion nanobeam

Okubo, Takeru; Ishii, Yasuyuki; Kamiya, Tomihiro

AIP Conference Proceedings 1336, p.176 - 180, 2011/06

 Times Cited Count:3 Percentile:76.36

Journal Articles

Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

AIP Conference Proceedings 1336, p.660 - 664, 2011/05

 Times Cited Count:1 Percentile:49.8

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H- and 6H-SiC epitaxial layers, and transient currents induced in SiC MOS capacitors by ion incidence were investigated. Transient Ion Beam Induced Current (TIBIC) measurements were performed using 15 MeV oxygen ions. As a result, the TIBIC peak height decreased with increasing number of incident ions. For example, the TIBIC signal peak for a 4H-SiC MOS capacitor at a reverse bias of 15 V was 0.18 mA at the beginning. The peak decreased to be 0.10 mA after 1800 ion irradiation. After that, the forward bias of 1 V was applied to the MOS capacitor and the TIBIC measurements were carried out under the same conditions. As a result, the peak height was recovered to be 0.18 mA. In general, the response of charge de-trapping by deep levels in wide bandgap semiconductors is very slow and they act as fixed charge. Since dense electron-hole pairs are generated by ion incident and holes move to the SiO$$_{2}$$/SiC interface by the electric field (applied reverse bias). Therefore, the decrease in TIBIC signal peak can be interpreted in terms of the recombination of negatively charged acceptor type deep levels with ion induced holes.

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