Influence of epitaxial growth on spin current transmission of NiO films

Yamazaki, Takumi*; Seki, Takeshi*; Kubota, Takahide*; Takanashi, Koki

Applied Physics Express, 16(8), p.083003_1 - 083003_4, 2023/08

https://doi.org/10.35848/1882-0786/acecd5

A Large modulation of spin pumping using magnetic phase transitions in single crystalline dysprosium

Yamanoi, Kazuto*; Sakakibara, Yuri*; Fujimoto, Junji*; Matsuo, Mamoru; Nozaki, Yukio*

Applied Physics Express, 16(6), p.063004_1 - 063004_6, 2023/06

https://doi.org/10.35848/1882-0786/acde67

Impact of post-nitridation annealing in CO ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

Hosoi, Takuji*; Osako, Momoe*; Moges, K.*; Ito, Koji*; Kimoto, Tsunenobu*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 15(6), p.061003_1 - 061003_5, 2022/06

https://doi.org/10.35848/1882-0786/ac6f42

The combination of NO annealing and subsequent post-nitridation annealing (PNA) in CO ambient for SiO/SiC structures has been demonstrated to be effective in obtaining both high channel mobility and superior threshold voltage stability in SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs). N atoms on the SiO side of the SiO/SiC interface incorporated by NO annealing, which are plausible cause of charge trapping sites, could be selectively removed by CO-PNA at 1300C without oxidizing the SiC. CO-PNA was also effective in compensating oxygen vacancies in SiO, resulting high immunity against both positive and negative bias-temperature stresses.

Half-integer Shapiro-steps in superconducting qubit with a -Josephson junction

Mori, Michiyasu; Maekawa, Sadamichi

Applied Physics Express, 14(10), p.103001_1 - 103001_4, 2021/10

https://doi.org/10.35848/1882-0786/ac211d

Thickness dependence of spin Peltier effect visualized by thermal imaging technique

Daimon, Shunsuke*; Uchida, Kenichi*; Ujiie, Naomi*; Hattori, Yasuyuki*; Tsuboi, Rei*; Saito, Eiji

Applied Physics Express, 13(10), p.103001_1 - 103001_4, 2020/10

https://doi.org/10.35848/1882-0786/abb2b5

Control of Ga-oxide interlayer growth and Ga diffusion in SiO/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

https://doi.org/10.7567/APEX.11.015701

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO/GaO/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10cmeV were obtained by post-deposition annealing, Ga diffusion into overlying SiO layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

https://doi.org/10.7567/APEX.9.105801

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

https://doi.org/10.7567/APEX.9.101002

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in AlO films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.210 cmeV. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

Spin pumping blocked by single-layer graphene

Haku, Satoshi*; Tashiro, Takaharu*; Nakayama, Hiroyasu*; Ieda, Junichi; Entani, Shiro; Sakai, Seiji; Ando, Kazuya*

Applied Physics Express, 8(7), p.073009_1 - 073009_3, 2015/07

https://doi.org/10.7567/APEX.8.073009

We found that the spin pumping in a NiFe/Pt bilayer is strongly suppressed by inserting single-layer graphene (SLG) at the interface. The spin pumping in the NiFe/Pt bilayer enhances the magnetization damping of the ferromagnetic layer, which is quantified from microwave frequency dependence of ferromagnetic resonance linewidth. We show that the enhancement of the magnetization damping due to the spin pumping disappears in a NiFe/SLG/Pt trilayer. This result indicates that the spin pumping is blocked by the atomic monolayer, demonstrating the crucial role of the interfacial short-range spin-exchange coupling in the spin pumping in metallic systems.

Efficient extreme ultraviolet emission from one-dimensional spherical plasmas produced by multiple lasers

Yoshida, Kensuke*; Fujioka, Shinsuke*; Higashiguchi, Takeshi*; Ugomori, Teruyuki*; Tanaka, Nozomi*; Ohashi, Hayato*; Kawasaki, Masato*; Suzuki, Yuhei*; Suzuki, Chihiro*; Tomita, Kentaro*; et al.

Applied Physics Express, 7(8), p.086202_1 - 086202_4, 2014/08

https://doi.org/10.7567/APEX.7.086202

We demonstrate high conversion efficiency for extreme ultraviolet (EUV) emission at 6.5-6.7 nm from multiple laser beam-produced one-dimensional spherical plasmas. Multiply charged-state ions produce strong resonance emission lines, which combine to yield intense unresolved transition arrays in Gd, Tb, and Mo. The maximum in-band EUV conversion efficiency was observed to be 0.8%, which is one of the highest values ever reported due to the reduction of plasma expansion loss.