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Journal Articles

Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching

Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*

Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07

 Times Cited Count:0

We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H$$_{2}$$ atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.

Journal Articles

${it In situ}$ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag$$_{2}$$S

Wang, Y.*; Gong, W.; Kawasaki, Takuro; Harjo, S.; Zhang, K.*; Zhang, Z. D.*; Li, B.*

Applied Physics Letters, 123(1), p.011903_1 - 011903_6, 2023/07

 Times Cited Count:0

Journal Articles

Work function lowering of LaB$$_{6}$$ by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

Yamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

 Times Cited Count:0 Percentile:0(Physics, Applied)

A lowering of work function for LaB$$_{6}$$ by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB$$_{6}$$(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB$$_{6}$$(100) compared to graphene coated LaB$$_{6}$$(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB$$_{6}$$.

Journal Articles

Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems

Masuda, Hiroto*; Yamane, Yuta*; Seki, Takeshi*; Raab, K.*; Dohi, Takaaki*; Modak, R.*; Uchida, Kenichi*; Ieda, Junichi; Kl$"a$ui, M.*; Takanashi, Koki

Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04

 Times Cited Count:0 Percentile:0(Physics, Applied)

Journal Articles

Thermal stability of non-collinear antiferromagnetic Mn$$_3$$Sn nanodot

Sato, Yuma*; Takeuchi, Yutaro*; Yamane, Yuta*; Yoon, J.-Y.*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03

 Times Cited Count:0 Percentile:0(Physics, Applied)

Journal Articles

Shapiro steps in charge-density-wave states driven by ultrasound

Mori, Michiyasu; Maekawa, Sadamichi

Applied Physics Letters, 122(4), p.042202_1 - 042202_5, 2023/01

 Times Cited Count:0 Percentile:0(Physics, Applied)

Journal Articles

Electrical properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000$$bar{1}$$) substrates

Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

The interface properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000$$bar{1}$$) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO$$_{2}$$/GaN MOS structures on Ga-polar GaN(0001). Although the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO$$_{2}$$/GaN(000$$bar{1}$$) was smaller than that for SiO$$_{2}$$/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000$$bar{1}$$) substrates for MOS device fabrication.

Journal Articles

Observation of domain structure in non-collinear antiferromagnetic Mn$$_3$$Sn thin films by magneto-optical Kerr effect

Uchimura, Tomohiro*; Yoon, J.-Y.*; Sato, Yuma*; Takeuchi, Yutaro*; Kanai, Shun*; Takechi, Ryota*; Kishi, Keisuke*; Yamane, Yuta*; DuttaGupta, S.*; Ieda, Junichi; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

 Times Cited Count:8 Percentile:89.59(Physics, Applied)

Journal Articles

Fabrication of (Bi$$_2$$)$$_m$$(Bi$$_2$$Te$$_3$$)$$_n$$ superlattice films by Te desorption from a pristine Bi$$_2$$Te$$_3$$ film

Kusaka, Shotaro*; Sasaki, Taisuke*; Sumida, Kazuki; Ichinokura, Satoru*; Ideta, Shinichiro*; Tanaka, Kiyohisa*; Hono, Kazuhiro*; Hirahara, Toru*

Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04

 Times Cited Count:2 Percentile:55.05(Physics, Applied)

Journal Articles

Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography

Hayashi, Koichi*; Lederer, M.*; Fukumoto, Yohei*; Goto, Masashi*; Yamamoto, Yuta*; Happo, Naohisa*; Harada, Masahide; Inamura, Yasuhiro; Oikawa, Kenichi; Oyama, Kenji*; et al.

Applied Physics Letters, 120(13), p.132101_1 - 132101_6, 2022/03

 Times Cited Count:0 Percentile:0(Physics, Applied)

Journal Articles

Martensitic transformation in CrCoNi medium-entropy alloy at cryogenic temperature

Naeem, M.*; Zhou, H.*; He, H.*; Harjo, S.; Kawasaki, Takuro; Lan, S.*; Wu, Z.*; Zhu, Y.*; Wang, X.-L.*

Applied Physics Letters, 119(13), p.131901_1 - 131901_7, 2021/09

 Times Cited Count:7 Percentile:67.23(Physics, Applied)

Journal Articles

Evaluation of edge domains in giant magnetoresistive junctions

Frost, W.*; Seki, Takeshi*; Kubota, Takahide*; Ramos, R.*; Saito, Eiji; Takanashi, Koki*; Hirohata, Atsufumi*

Applied Physics Letters, 118(17), p.172405_1 - 172405_5, 2021/04

 Times Cited Count:1 Percentile:11.39(Physics, Applied)

Journal Articles

Observation of quantum interference conductance fluctuations in metal rings with strong spin-orbit coupling

Ramos, R.*; Makiuchi, Takahiko*; Kikkawa, Takashi*; Daimon, Shunsuke*; Oyanagi, Koichi*; Saito, Eiji

Applied Physics Letters, 117(24), p.242402_1 - 242402_5, 2020/12

 Times Cited Count:1 Percentile:6.82(Physics, Applied)

Journal Articles

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

Schreiber, F.*; Baldrati, L.*; Schmitt, C.*; Ramos, R.*; Saito, Eiji; Lebrun, R.*; Kl$"a$ui, M.*

Applied Physics Letters, 117(8), p.082401_1 - 082401_5, 2020/08

 Times Cited Count:23 Percentile:85.24(Physics, Applied)

Journal Articles

Electric field effect on the magnetic domain wall creep velocity in Pt/Co/Pd structures with different Co thicknesses

Koyama, Tomohiro*; Ieda, Junichi; Chiba, Daichi*

Applied Physics Letters, 116(9), p.092405_1 - 092405_5, 2020/03


 Times Cited Count:4 Percentile:31.34(Physics, Applied)

Journal Articles

Absence of evidence of spin transport through amorphous Y$$_3$$Fe$$_5$$O$$_{12}$$

Gomez-Perez, J. M.*; Oyanagi, Koichi*; Yahiro, Reimei*; Ramos, R.*; Hueso, L. E.*; Saito, Eiji; Casanova, F.*

Applied Physics Letters, 116(3), p.032401_1 - 032401_5, 2020/01

 Times Cited Count:9 Percentile:59.61(Physics, Applied)

Journal Articles

Polaronic nature of a muonium-related paramagnetic center in SrTiO$$_3$$

Ito, Takashi; Higemoto, Wataru; Koda, Akihiro*; Shimomura, Koichiro*

Applied Physics Letters, 115(19), p.192103_1 - 192103_4, 2019/11

 Times Cited Count:7 Percentile:41.44(Physics, Applied)

Journal Articles

Angular momentum compensation manipulation to room temperature of the ferrimagnet Ho$$_{3-x}$$Dy$$_{x}$$Fe$$_5$$O$$_{12}$$ detected by the Barnett effect

Imai, Masaki; Chudo, Hiroyuki; Ono, Masao; Harii, Kazuya; Matsuo, Mamoru; Onuma, Yuichi*; Maekawa, Sadamichi; Saito, Eiji

Applied Physics Letters, 114(16), p.162402_1 - 162402_4, 2019/04

 Times Cited Count:19 Percentile:75.2(Physics, Applied)

Journal Articles

Magnetomechanical sensing based on delta-E effect in Y$$_3$$Fe$$_5$$O$$_{12}$$ micro bridge

Arisawa, Hiroki*; Daimon, Shunsuke*; Oikawa, Yasuyuki*; Seo, Y.-J.*; Harii, Kazuya; Oyanagi, Koichi*; Saito, Eiji

Applied Physics Letters, 114(12), p.122402_1 - 122402_5, 2019/03

 Times Cited Count:4 Percentile:24.67(Physics, Applied)

Journal Articles

Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in $$gamma$$-Fe$$_2$$O$$_3$$/NiO/Pt epitaxial stacks

Dong, B.-W.*; Baldrati, L.*; Schneider, C.*; Niizeki, Tomohiko*; Ramos, R.*; Ross, A.*; Cramer, J.*; Saito, Eiji; Kl$"a$ui, M.*

Applied Physics Letters, 114(10), p.102405_1 - 102405_5, 2019/03

 Times Cited Count:8 Percentile:46.02(Physics, Applied)

169 (Records 1-20 displayed on this page)