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Uchimura, Tomohiro*; Yoon, J.-Y.*; Sato, Yuma*; Takeuchi, Yutaro*; Kanai, Shun*; Takechi, Ryota*; Kishi, Keisuke*; Yamane, Yuta*; DuttaGupta, S.*; Ieda, Junichi; et al.
Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04
Times Cited Count:3 Percentile:63.84(Physics, Applied)Kusaka, Shotaro*; Sasaki, Taisuke*; Sumida, Kazuki; Ichinokura, Satoru*; Ideta, Shinichiro*; Tanaka, Kiyohisa*; Hono, Kazuhiro*; Hirahara, Toru*
Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04
Times Cited Count:1 Percentile:63.84(Physics, Applied)Naeem, M.*; Zhou, H.*; He, H.*; Harjo, S.; Kawasaki, Takuro; Lan, S.*; Wu, Z.*; Zhu, Y.*; Wang, X.-L.*
Applied Physics Letters, 119(13), p.131901_1 - 131901_7, 2021/09
Times Cited Count:5 Percentile:70.19(Physics, Applied)Frost, W.*; Seki, Takeshi*; Kubota, Takahide*; Ramos, R.*; Saito, Eiji; Takanashi, Koki*; Hirohata, Atsufumi*
Applied Physics Letters, 118(17), p.172405_1 - 172405_5, 2021/04
Times Cited Count:0 Percentile:0(Physics, Applied)Ramos, R.*; Makiuchi, Takahiko*; Kikkawa, Takashi*; Daimon, Shunsuke*; Oyanagi, Koichi*; Saito, Eiji
Applied Physics Letters, 117(24), p.242402_1 - 242402_5, 2020/12
Times Cited Count:1 Percentile:9.11(Physics, Applied)Schreiber, F.*; Baldrati, L.*; Schmitt, C.*; Ramos, R.*; Saito, Eiji; Lebrun, R.*; Klui, M.*
Applied Physics Letters, 117(8), p.082401_1 - 082401_5, 2020/08
Times Cited Count:18 Percentile:84.88(Physics, Applied)Koyama, Tomohiro*; Ieda, Junichi; Chiba, Daichi*
Applied Physics Letters, 116(9), p.092405_1 - 092405_5, 2020/03
Times Cited Count:3 Percentile:29.72(Physics, Applied)Gomez-Perez, J. M.*; Oyanagi, Koichi*; Yahiro, Reimei*; Ramos, R.*; Hueso, L. E.*; Saito, Eiji; Casanova, F.*
Applied Physics Letters, 116(3), p.032401_1 - 032401_5, 2020/01
Times Cited Count:8 Percentile:67.64(Physics, Applied)Ito, Takashi; Higemoto, Wataru; Koda, Akihiro*; Shimomura, Koichiro*
Applied Physics Letters, 115(19), p.192103_1 - 192103_4, 2019/11
Times Cited Count:6 Percentile:41.39(Physics, Applied)Imai, Masaki; Chudo, Hiroyuki; Ono, Masao; Harii, Kazuya; Matsuo, Mamoru; Onuma, Yuichi*; Maekawa, Sadamichi; Saito, Eiji
Applied Physics Letters, 114(16), p.162402_1 - 162402_4, 2019/04
Times Cited Count:15 Percentile:72.9(Physics, Applied)Arisawa, Hiroki*; Daimon, Shunsuke*; Oikawa, Yasuyuki*; Seo, Y.-J.*; Harii, Kazuya; Oyanagi, Koichi*; Saito, Eiji
Applied Physics Letters, 114(12), p.122402_1 - 122402_5, 2019/03
Times Cited Count:4 Percentile:28.63(Physics, Applied)Dong, B.-W.*; Baldrati, L.*; Schneider, C.*; Niizeki, Tomohiko*; Ramos, R.*; Ross, A.*; Cramer, J.*; Saito, Eiji; Klui, M.*
Applied Physics Letters, 114(10), p.102405_1 - 102405_5, 2019/03
Times Cited Count:8 Percentile:46.69(Physics, Applied)Imai, Masaki; Ogata, Yudai*; Chudo, Hiroyuki; Ono, Masao; Harii, Kazuya; Matsuo, Mamoru*; Onuma, Yuichi*; Maekawa, Sadamichi; Saito, Eiji
Applied Physics Letters, 113(5), p.052402_1 - 052402_3, 2018/07
Times Cited Count:15 Percentile:64.05(Physics, Applied)Yoshigoe, Akitaka; Shiwaku, Hideaki; Kobayashi, Toru; Shimoyama, Iwao; Matsumura, Daiju; Tsuji, Takuya; Nishihata, Yasuo; Kogure, Toshihiro*; Okochi, Takuo*; Yasui, Akira*; et al.
Applied Physics Letters, 112(2), p.021603_1 - 021603_5, 2018/01
Times Cited Count:4 Percentile:24.54(Physics, Applied)A synchrotron radiation photoemission electron microscope (SR-PEEM) was applied to demonstrate pinpoint analysis of micrometer-sized weathered biotite clay particles with artificially adsorbed cesium (Cs) atoms. Despite the insulating properties of the clay, we observed the spatial distributions of constituent elements (Si, Al, Cs, Mg, Fe) without charging issues. We found that Cs atoms were likely to be adsorbed evenly over the entire particle. Spatially-resolved X-ray absorption spectra (XAS) of the Cs M-edge region showed Cs to be present in a monocation state (Cs
). Further pinpoint XAS measurements were also performed at the Fe L
-edge to determine the chemical valence of the Fe atoms. Our results demonstrate the utility of SR-PEEM as a tool for spatially-resolved chemical analyses of various environmental substances, which is not limited by the poor conductivity of samples.
Lee, C. H.*; Nishida, Atsuhiro*; Hasegawa, Takumi*; Nishiate, Hirotaka*; Kunioka, Haruno*; Kawamura, Seiko; Nakamura, Mitsutaka; Nakajima, Kenji; Mizuguchi, Yoshikazu*
Applied Physics Letters, 112(2), p.023903_1 - 023903_4, 2018/01
Times Cited Count:25 Percentile:79.33(Physics, Applied)Low energy phonons in LaOBiSSe
are studied using inelastic neutron scattering. Dispersionless flat phonon branches that are mainly associated with a large vibration of Bi atoms are observed at a relatively low energy of
= 6 - 6.7 meV. The phonon energy softens upon Se doping owing to its heavier atomic mass than S atom and the expansion of lattice constant. Simultaneously, the lattice thermal conductivity lowered upon Se doping as the same manner of the phonon softening. These suggest that despite the lack of an oversized cage in LaOBiS
Se
, rattling motions of Bi atoms can scatter phonon like rattling in cage compounds, contributing to enhance the thermoelectric property.
Ikeura, Hiromi*; Sekiguchi, Tetsuhiro
Applied Physics Letters, 111(23), p.231605_1 - 231605_4, 2017/12
Times Cited Count:0 Percentile:0(Physics, Applied)Photo-oxidative doping processes were studied for the trans-polyacetylene (PA) backbone with the -SCH side group as a chemically representative of the S-functionalized zig-zag graphene nanoribbon edge. Sulfur K-edge X-ray absorption near edge structure (XANES) spectroscopy indicates that photochemical reaction of S-CH
with atmospheric O
forms selectively oxidized products such as -S(O)CH
and -SO
bound to the (PA) backbone. Using the correlation between the oxidation states of sulfur and the XANES peak positions, the partial charge distribution of CH
S
-PA
has been estimated. The results can provide some strategy for area-selective and controllable doping processes of atomic-scale molecular systems with the assistance of UV light.
Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.
Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07
Times Cited Count:14 Percentile:61.11(Physics, Applied)AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (AlO
and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.
Seo, Y.-J.*; Harii, Kazuya; Takahashi, Ryo*; Chudo, Hiroyuki; Oyanagi, Koichi*; Qiu, Z.*; Ono, Takahito*; Shiomi, Yuki*; Saito, Eiji
Applied Physics Letters, 110(13), p.132409_1 - 132409_4, 2017/03
Times Cited Count:12 Percentile:55.95(Physics, Applied)We have fabricated ferrite cantilevers in which their vibrational properties can be controlled by external magnetic fields. Submicron-scale cantilever structures were made from YFe
O
films by physical etching combined with the use of a focused ion beam milling technique. We found that the cantilevers exhibit two resonance modes which correspond to horizontal and vertical vibrations. Under external magnetic fields, the resonance frequency of the horizontal mode increases, while that of the vertical mode decreases, quantitatively consistent with our numerical simulation for magnetic forces. The changes in resonance frequencies with magnetic fields reach a few percent, showing that an efficient magnetic control of resonance frequencies was achieved.
Ogata, Yudai; Chudo, Hiroyuki; Ono, Masao; Harii, Kazuya; Matsuo, Mamoru; Maekawa, Sadamichi; Saito, Eiji
Applied Physics Letters, 110(7), p.072409_1 - 072409_4, 2017/02
Times Cited Count:14 Percentile:61.11(Physics, Applied)Yagmur, A.*; Uchida, Kenichi*; Ihara, Kazuki*; Ioka, Ikuo; Kikkawa, Takashi*; Ono, Madoka*; Endo, Junichi*; Kashiwagi, Kimiaki*; Nakashima, Tetsuya*; Kirihara, Akihiro*; et al.
Applied Physics Letters, 109(24), p.243902_1 - 243902_4, 2016/12
Times Cited Count:3 Percentile:16.7(Physics, Applied)Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma () rays with the total dose of around 3
10
Gy in order to investigate the
-radiation resistance of the devices. To demonstrate this, Pt/Ni
Zn
Fe
O
/Glass and Pt/Bi
Y
Fe
O
/Gd
Ga
O
SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the
-ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments.