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Huang, Y.-C.*; Kikkawa, Takashi; 5 of others*
Applied Physics Letters, 126(9), p.092403_1 - 092403_6, 2025/03
Times Cited Count：0 Percentile：0.00(Physics, Applied)Yao, D.*; Matsuo, Mamoru; Yokoyama, Takehito*
Applied Physics Letters, 124(16), p.162603_1 - 162603_5, 2024/04
Times Cited Count：4 Percentile：82.03(Physics, Applied)
-Ga
O
(001)Tsai, Y. H.*; Kobata, Masaaki; Fukuda, Tatsuo; Tanida, Hajime; Kobayashi, Toru; Yamashita, Yoshiyuki*
Applied Physics Letters, 124(11), p.112105_1 - 112105_5, 2024/03
Times Cited Count：2 Percentile：62.71(Physics, Applied)Shamoto, Shinichi; Akatsu, Mitsuhiro*; Chang, L.-J.*; Nemoto, Yuichi*; Ieda, Junichi
Applied Physics Letters, 124(11), p.112402_1 - 112402_5, 2024/03
Times Cited Count：1 Percentile：40.97(Physics, Applied)The magnon excitation by ultrasound injection in Y
Fe
O
is studied by inelastic neutron scattering. Both longitudinal and transverse ultrasound injections enhanced the inelastic neutron scattering intensity.
FeOKawamoto, Yo*; Kikkawa, Takashi; Saito, Eiji; 9 of others*
Applied Physics Letters, 124(13), p.132406_1 - 132406_7, 2024/03
Times Cited Count：4 Percentile：82.03(Physics, Applied)Zhou, X.*; Fukutani, Katsuyuki; 9 of others*
Applied Physics Letters, 124(8), p.082103_1 - 082103_7, 2024/02
Times Cited Count：6 Percentile：89.50(Physics, Applied)Matsushima, Yu*; Zhang, Z.*; Ohashi, Yuri*; Hatakeyama, Tsunagu*; Xiao, G.*; Funato, Takumi*; Matsuo, Mamoru; Kaiju, Hideo*
Applied Physics Letters, 124(2), p.022404_1 - 022404_7, 2024/01
Times Cited Count：3 Percentile：74.90(Physics, Applied)
neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor AgSWang, Y.*; Gong, W.; Kawasaki, Takuro; Harjo, S.; Zhang, K.*; Zhang, Z. D.*; Li, B.*
Applied Physics Letters, 123(1), p.011903_1 - 011903_6, 2023/07
Times Cited Count：4 Percentile：50.15(Physics, Applied)Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*
Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07
Times Cited Count：3 Percentile：39.87(Physics, Applied)We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.
by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodesYamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*
Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04
Times Cited Count：6 Percentile：64.95(Physics, Applied)A lowering of work function for LaB by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB(100) compared to graphene coated LaB(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB.
Masuda, Hiroto*; Yamane, Yuta*; Seki, Takeshi*; Raab, K.*; Dohi, Takaaki*; Modak, R.*; Uchida, Kenichi*; Ieda, Junichi; Kl
ui, M.*; Takanashi, Koki
Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04
Times Cited Count：3 Percentile：39.87(Physics, Applied)Sn nanodotSato, Yuma*; Takeuchi, Yutaro*; Yamane, Yuta*; Yoon, J.-Y.*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*
Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03
Times Cited Count：5 Percentile：58.52(Physics, Applied)Mori, Michiyasu; Maekawa, Sadamichi
Applied Physics Letters, 122(4), p.042202_1 - 042202_5, 2023/01
Times Cited Count：4 Percentile：50.15(Physics, Applied)Hoshi, Kojiro*; Hioki, Tomosato*; Saito, Eiji
Applied Physics Letters, 121(21), p.212404_1 - 212404_6, 2022/11
Times Cited Count：4 Percentile：34.41(Physics, Applied)Hioki, Tomosato*; Saito, Eiji; 3 of others*
Applied Physics Letters, 121(13), p.132402_1 - 132402_5, 2022/09
Times Cited Count：0 Percentile：0.00(Physics, Applied)/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000
) substratesMizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08
Times Cited Count：1 Percentile：7.32(Physics, Applied)The interface properties and energy band alignment of SiO/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO/GaN MOS structures on Ga-polar GaN(0001). Although the SiO/GaN(000) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO/GaN(000) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO/GaN(000) was smaller than that for SiO/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000) substrates for MOS device fabrication.
Puebla, J.*; Hwang, Y.*; Maekawa, Sadamichi*; Otani, Yoshichika*
Applied Physics Letters, 120(22), p.220502_1 - 220502_9, 2022/05
Times Cited Count：36 Percentile：93.54(Physics, Applied)
)
(BiTe)
superlattice films by Te desorption from a pristine BiTe filmKusaka, Shotaro*; Sasaki, Taisuke*; Sumida, Kazuki; Ichinokura, Satoru*; Ideta, Shinichiro*; Tanaka, Kiyohisa*; Hono, Kazuhiro*; Hirahara, Toru*
Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04
Times Cited Count：4 Percentile：34.41(Physics, Applied)Sn thin films by magneto-optical Kerr effectUchimura, Tomohiro*; Yoon, J.-Y.*; Sato, Yuma*; Takeuchi, Yutaro*; Kanai, Shun*; Takechi, Ryota*; Kishi, Keisuke*; Yamane, Yuta*; DuttaGupta, S.*; Ieda, Junichi; et al.
Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04
Times Cited Count：24 Percentile：88.93(Physics, Applied)Hayashi, Koichi*; Lederer, M.*; Fukumoto, Yohei*; Goto, Masashi*; Yamamoto, Yuta*; Happo, Naohisa*; Harada, Masahide; Inamura, Yasuhiro; Oikawa, Kenichi; Oyama, Kenji*; et al.
Applied Physics Letters, 120(13), p.132101_1 - 132101_6, 2022/03
Times Cited Count：4 Percentile：34.41(Physics, Applied)