Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 181

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Spin-current volume effect on iron gallium films

Huang, Y.-C.*; Kikkawa, Takashi; 5 of others*

Applied Physics Letters, 126(9), p.092403_1 - 092403_6, 2025/03

 Times Cited Count:0 Percentile:0.00(Physics, Applied)

Journal Articles

Electric field-induced nonreciprocal spin current due to chiral phonons in chiral-structure superconductors

Yao, D.*; Matsuo, Mamoru; Yokoyama, Takehito*

Applied Physics Letters, 124(16), p.162603_1 - 162603_5, 2024/04

 Times Cited Count:4 Percentile:82.03(Physics, Applied)

Journal Articles

Atomic position and the chemical state of an active Sn dopant for Sn-doped $$beta$$-Ga$$_{2}$$O$$_{3}$$(001)

Tsai, Y. H.*; Kobata, Masaaki; Fukuda, Tatsuo; Tanida, Hajime; Kobayashi, Toru; Yamashita, Yoshiyuki*

Applied Physics Letters, 124(11), p.112105_1 - 112105_5, 2024/03

 Times Cited Count:2 Percentile:62.71(Physics, Applied)

Journal Articles

Inelastic neutron scattering study of magnon excitation by ultrasound injection in yttrium iron garnet

Shamoto, Shinichi; Akatsu, Mitsuhiro*; Chang, L.-J.*; Nemoto, Yuichi*; Ieda, Junichi

Applied Physics Letters, 124(11), p.112402_1 - 112402_5, 2024/03

 Times Cited Count:1 Percentile:40.97(Physics, Applied)

The magnon excitation by ultrasound injection in Y$$_3$$Fe$$_5$$O$$_{12}$$ is studied by inelastic neutron scattering. Both longitudinal and transverse ultrasound injections enhanced the inelastic neutron scattering intensity.

Journal Articles

Understanding spin currents from magnon dispersion and polarization; Spin-Seebeck effect and neutron scattering study on Tb$$_3$$Fe$$_5$$O$$_{12}$$

Kawamoto, Yo*; Kikkawa, Takashi; Saito, Eiji; 9 of others*

Applied Physics Letters, 124(13), p.132406_1 - 132406_7, 2024/03

 Times Cited Count:4 Percentile:82.03(Physics, Applied)

Journal Articles

Revealing the role of high-valence elementary substitution in the hydrogen-induced Mottronic transitions of vanadium dioxide

Zhou, X.*; Fukutani, Katsuyuki; 9 of others*

Applied Physics Letters, 124(8), p.082103_1 - 082103_7, 2024/02

 Times Cited Count:6 Percentile:89.50(Physics, Applied)

Journal Articles

Emergent magneto-inductance effect in permalloy thin films on flexible polycarbonate substrates at room temperature

Matsushima, Yu*; Zhang, Z.*; Ohashi, Yuri*; Hatakeyama, Tsunagu*; Xiao, G.*; Funato, Takumi*; Matsuo, Mamoru; Kaiju, Hideo*

Applied Physics Letters, 124(2), p.022404_1 - 022404_7, 2024/01

 Times Cited Count:3 Percentile:74.90(Physics, Applied)

Journal Articles

${it In situ}$ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag$$_{2}$$S

Wang, Y.*; Gong, W.; Kawasaki, Takuro; Harjo, S.; Zhang, K.*; Zhang, Z. D.*; Li, B.*

Applied Physics Letters, 123(1), p.011903_1 - 011903_6, 2023/07

 Times Cited Count:4 Percentile:50.15(Physics, Applied)

Journal Articles

Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching

Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*

Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07

 Times Cited Count:3 Percentile:39.87(Physics, Applied)

We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H$$_{2}$$ atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.

Journal Articles

Work function lowering of LaB$$_{6}$$ by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

Yamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

 Times Cited Count:6 Percentile:64.95(Physics, Applied)

A lowering of work function for LaB$$_{6}$$ by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB$$_{6}$$(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB$$_{6}$$(100) compared to graphene coated LaB$$_{6}$$(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB$$_{6}$$.

Journal Articles

Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems

Masuda, Hiroto*; Yamane, Yuta*; Seki, Takeshi*; Raab, K.*; Dohi, Takaaki*; Modak, R.*; Uchida, Kenichi*; Ieda, Junichi; Kl$"a$ui, M.*; Takanashi, Koki

Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04

 Times Cited Count:3 Percentile:39.87(Physics, Applied)

Journal Articles

Thermal stability of non-collinear antiferromagnetic Mn$$_3$$Sn nanodot

Sato, Yuma*; Takeuchi, Yutaro*; Yamane, Yuta*; Yoon, J.-Y.*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03

 Times Cited Count:5 Percentile:58.52(Physics, Applied)

Journal Articles

Shapiro steps in charge-density-wave states driven by ultrasound

Mori, Michiyasu; Maekawa, Sadamichi

Applied Physics Letters, 122(4), p.042202_1 - 042202_5, 2023/01

 Times Cited Count:4 Percentile:50.15(Physics, Applied)

Journal Articles

Spin motive force induced by parametric excitation

Hoshi, Kojiro*; Hioki, Tomosato*; Saito, Eiji

Applied Physics Letters, 121(21), p.212404_1 - 212404_6, 2022/11

 Times Cited Count:4 Percentile:34.41(Physics, Applied)

Journal Articles

Real-space observation of standing spin-wave modes in a magnetic disk

Hioki, Tomosato*; Saito, Eiji; 3 of others*

Applied Physics Letters, 121(13), p.132402_1 - 132402_5, 2022/09

 Times Cited Count:0 Percentile:0.00(Physics, Applied)

Journal Articles

Electrical properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000$$bar{1}$$) substrates

Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

 Times Cited Count:1 Percentile:7.32(Physics, Applied)

The interface properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000$$bar{1}$$) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO$$_{2}$$/GaN MOS structures on Ga-polar GaN(0001). Although the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO$$_{2}$$/GaN(000$$bar{1}$$) was smaller than that for SiO$$_{2}$$/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000$$bar{1}$$) substrates for MOS device fabrication.

Journal Articles

Perspectives on spintronics with surface acoustic waves

Puebla, J.*; Hwang, Y.*; Maekawa, Sadamichi*; Otani, Yoshichika*

Applied Physics Letters, 120(22), p.220502_1 - 220502_9, 2022/05

 Times Cited Count:36 Percentile:93.54(Physics, Applied)

Journal Articles

Fabrication of (Bi$$_2$$)$$_m$$(Bi$$_2$$Te$$_3$$)$$_n$$ superlattice films by Te desorption from a pristine Bi$$_2$$Te$$_3$$ film

Kusaka, Shotaro*; Sasaki, Taisuke*; Sumida, Kazuki; Ichinokura, Satoru*; Ideta, Shinichiro*; Tanaka, Kiyohisa*; Hono, Kazuhiro*; Hirahara, Toru*

Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04

 Times Cited Count:4 Percentile:34.41(Physics, Applied)

Journal Articles

Observation of domain structure in non-collinear antiferromagnetic Mn$$_3$$Sn thin films by magneto-optical Kerr effect

Uchimura, Tomohiro*; Yoon, J.-Y.*; Sato, Yuma*; Takeuchi, Yutaro*; Kanai, Shun*; Takechi, Ryota*; Kishi, Keisuke*; Yamane, Yuta*; DuttaGupta, S.*; Ieda, Junichi; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

 Times Cited Count:24 Percentile:88.93(Physics, Applied)

Journal Articles

Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography

Hayashi, Koichi*; Lederer, M.*; Fukumoto, Yohei*; Goto, Masashi*; Yamamoto, Yuta*; Happo, Naohisa*; Harada, Masahide; Inamura, Yasuhiro; Oikawa, Kenichi; Oyama, Kenji*; et al.

Applied Physics Letters, 120(13), p.132101_1 - 132101_6, 2022/03

 Times Cited Count:4 Percentile:34.41(Physics, Applied)

181 (Records 1-20 displayed on this page)