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Journal Articles

High-$$k$$/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO$$_{x}$$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Dai-19-Kai Getosutakku KenkyuKai Yokoshu, p.5 - 8, 2014/01

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