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Journal Articles

High proton radiation tolerance of InAsSb quantum-well-based micro-Hall sensors

Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Shibasaki, Ichiro*; Sandhu, A.*

IEEE Electron Device Letters, 35(12), p.1305 - 1307, 2014/12

 Times Cited Count:0 Percentile:0(Engineering, Electrical & Electronic)

Tolerance of AlInSb/InAsSb/AlInSb heterostructures quantum-well-based micro-Hall sensors against proton irradiation of 380 keV and proton fluence in the range 10$$^{11}$$ and 10$$^{16}$$ (proton/cm$$^2$$) is reported. Defects and deep levels induced by proton irradiation into the heterostructures caused decreases in the mobility of the micro-Hall sensors. Degradation of the magnetic sensitivity started at a proton fluence of 10$$^{13}$$ (proton/cm$$^2$$) and continued with increasing proton fluence. The variation of the micro-Hall sensors sensitivity was minimal in low doped AlInSb/InAsSb/AlInSb heterostructure quantum wells. These micro-Hall sensors were operable even at proton fluence of 10$$^{16}$$ (proton/cm$$^{2}$$), which makes these devices suitable for space applications with lifetime of thousands of years in the outer space.

Journal Articles

Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN-based magnetic sensor at cryogenic temperature

Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

IEEE Electron Device Letters, 35(11), p.1130 - 1132, 2014/11

 Times Cited Count:9 Percentile:51.52(Engineering, Electrical & Electronic)

The longitudinal and transverse magnetoresistances of AlGaN/GaN heterostructure-based micro-Hall sensors were compared with samples irradiated with protons with an energy of 380 keV and fluence of 10$$^{14}$$ (protons/cm$$^{2}$$). Increases in the elastic and inelastic scattering were deduced from weak localization behavior in both samples. The AlGaN/GaN micro-Hall sensors showed stable magnetic sensitivity in non and irradiated samples and increased resistivity after proton irradiation yielded an enhanced magnetoresistance sensitivity in nonirradiated sensors from 160 to 417 V/(A $$cdot$$ T). The minimum detectable magnetic field of irradiated micro-Hall sensors determined from magneto-voltage measurements at 4 K was similar to the minimum detectable magnetic field in the nonirradiated sensors.

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