Refine your search:     
Report No.
 - 
Search Results: Records 1-3 displayed on this page of 3
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Quantum-well solar cells for space; The Impact of carrier removal on end-of-life device performance

Hoheisel, R.*; Gonz$'a$lez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.

IEEE Journal of Photovoltaics, 4(1), p.253 - 259, 2014/01

 Times Cited Count:13 Percentile:56.08(Energy & Fuels)

Analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. We found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n- or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.

Journal Articles

Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple-junction solar cells irradiated with protons

Sato, Shinichiro; Beernink, K.*; Oshima, Takeshi

IEEE Journal of Photovoltaics, 3(4), p.1415 - 1422, 2013/10

 Times Cited Count:2 Percentile:10.69(Energy & Fuels)

Electrical performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of protons with different energies and their performance recovery at room temperature (RT) just after irradiation are reported. The current-voltage characteristics are measured ${it in-situ}$, and the results show that all the parameters recover with time after proton irradiation is stopped. The degradation is scaled by a unit of displacement damage dose independent of proton energy, indicating that the proton-induced degradation is mainly caused by the displacement damage effects. By analyzing the quantum efficiency variations due to irradiation, it is clarified that the top subcell recovers more markedly at RT than the other subcells, and the recovery of the middle cell is less pronounced.

Journal Articles

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

 Times Cited Count:5 Percentile:25.16(Energy & Fuels)

3 (Records 1-3 displayed on this page)
  • 1