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Nanoscale structural analysis of Bi$$_{0.5}$$Na$$_{0.5}$$TiO$$_3$$

米田 安宏; 野口 祐二*

Japanese Journal of Applied Physics, 59(SP), p.SPPA01_1 - SPPA01_7, 2020/11

 被引用回数:0 パーセンタイル:100(Physics, Applied)

放射光全散乱を利用してBi$$_{0.5}$$Na$$_{0.5}$$TiO$$_3$$ (BNT)のナノスケール構造解析を行った。BNTは脱分極温度が低いという問題があるものの、非鉛で優れた圧電特性を持つ物質として期待されている。脱分極はリラクサー同様の散漫的な振る舞いであるため、局所構造解析が必要である。局所構造解析によって化学量論的不均一性と構造不均一性の両方を明らかにした。特に局所構造領域においてはTiのランダムネスが構造の平均化を強く促進していることがわかった。


Tolerance of spin-Seebeck thermoelectricity against irradiation by swift heavy ions

岡安 悟; 針井 一哉*; 小畠 雅明; 吉井 賢資; 福田 竜生; 石田 真彦*; 家田 淳一; 齊藤 英治

Journal of Applied Physics, 128(8), p.083902_1 - 083902_7, 2020/08

The ion-irradiation tolerance of thermoelectric devices based on the spin Seebeck effect (SSE) was investigated by using 320 MeV gold ion (Au$$^{24+}$$) beams modeling cumulative damages due to fission products emitted from the surface of spent nuclear fuels. For this purpose, prototypical Pt/Y$$_3$$Fe$$_5$$O$$_{12}$$/Gd$$_3$$Ga$$_5$$O$$_{12}$$ SSE elements were irradiated with varying the dose level at room temperature and measured the SSE voltage of them. We confirmed that the thermoelectric and magnetic properties of the SSE elements are not affected by the ion-irradiation up to $$10^{10}$$ ions/cm$$^2$$ fluence and that the SSE signal is extinguished around $$10^{12}$$ ions/cm$$^2$$, in which the ion tracks almost fully cover the sample surface. We also performed the hard X-ray photoemission spectroscopy (HAXPES) measurements to understand the effects at the interface of Pt/Y$$_3$$Fe$$_5$$O$$_{12}$$. The HAXPES measurements suggest that the chemical reaction that diminishes the SSE signals is enhanced with the increase of the irradiation dose. The present study demonstrates that SSE-based devices are applicable to thermoelectric generation even in harsh environments for a long time period.


Development of microwave-assisted, laser-induced breakdown spectroscopy without a microwave cavity or waveguide

大場 正規; 宮部 昌文; 赤岡 克昭; 若井田 育夫

Japanese Journal of Applied Physics, 59(6), p.062001_1 - 062001_6, 2020/06

 被引用回数:0 パーセンタイル:100(Physics, Applied)



Acoustic ferromagnetic resonance and spin pumping induced by surface acoustic waves

Puebla, J.*; Xu, M.*; Rana, B.*; 山本 慧; 前川 禎通*; 大谷 義近*

Journal of Physics D; Applied Physics, 53(26), p.264002_1 - 264002_7, 2020/06

 被引用回数:3 パーセンタイル:4.75(Physics, Applied)

Voltage induced magnetization dynamics of magnetic thin films is a valuable tool to study anisotropic fields, exchange couplings, magnetization damping and spin pumping mechanism. A particularly well established technique is the ferromagnetic resonance (FMR) generated by the coupling of microwave photons and magneti- zation eigenmodes in the GHz range. Here we review the basic concepts of the so-called acoustic ferromagnetic resonance technique (a-FMR) induced by the coupling of surface acoustic waves (SAW) and magnetization of thin films. Interestingly, additional to the benefits of the microwave excited FMR technique, the coupling be- tween SAW and magnetization also offers fertile ground to study magnon-phonon and spin rotation couplings. We describe the in-plane magnetic field angle dependence of the a-FMR by measuring the absorption / trans- mission of SAW and the attenuation of SAW in the presence of rotational motion of the lattice, and show the consequent generation of spin current by acoustic spin pumping.


Toward technological contributions to remote operations in the decommissioning of the Fukushima Daiichi Nuclear Power Station

川端 邦明

Japanese Journal of Applied Physics, 59(5), p.050501_1 - 050501_9, 2020/05



TEM analysis of ion-tracks and hillocks produced by swift heavy ions of different velocities in Y$$_{3}$$Fe$$_{5}$$O$$_{12}$$

石川 法人; 田口 富嗣*; 喜多村 茜; Szenes, G.*; Toimil-Molares, M. E.*; Trautmann, C.*

Journal of Applied Physics, 127(5), p.055902_1 - 055902_7, 2020/02

 被引用回数:1 パーセンタイル:100(Physics, Applied)



Anomalous solution softening by unique energy balance mediated by kink mechanism in tungsten-rhenium alloys

都留 智仁; 譯田 真人*; 鈴土 知明; 板倉 充洋; 尾方 成信*

Journal of Applied Physics, 127(2), p.025101_1 - 025101_9, 2020/01

 被引用回数:0 パーセンタイル:100(Physics, Applied)



Short- and middle-ranges order structures of KNbO$$_3$$ nanocrystals

米田 安宏; 國定 諒一*; 近田 司*; 上野 慎太郎*; 藤井 一郎*; 永田 肇*; 尾原 幸治*; 和田 智志*

Japanese Journal of Applied Physics, 58(SL), p.SLLA03_1 - SLLA03_7, 2019/11

 被引用回数:0 パーセンタイル:100(Physics, Applied)

We studied KNbO$$_3$$ nanocrystals grown by a solvothermal method. Average and local structures were refined by combining Rietveld and PDF analysis. We found that a rhombohedrally distorted NbO$$_6$$ octahedron was maintained in short-range order region, even in the nanocrystals with a cubic average structure. The cubic structure of KNbO$$_3$$ nanocrystals were observed as a disordered phase of the rhombohedral structure. The disordered feature can be understood that the structural transformation owing to the particle-size effect is analogous to the temperature-driven phase transition.


Modeling of yield estimation for DNA strand breaks based on Monte Carlo simulations of electron track structure in liquid water

松谷 悠佑; 甲斐 健師; 吉井 勇治*; 谷内 淑恵*; 内城 信吾*; 伊達 広行*; 佐藤 達彦

Journal of Applied Physics, 126(12), p.124701_1 - 124701_8, 2019/09

 被引用回数:4 パーセンタイル:27.63(Physics, Applied)



Spin rotation, glassy state, and magnetization switching in ${it R}$CrO$$_{3}$$ (${it R}$=La$$_{1-x}$$Pr$$_{x}$$, Gd, and Tm); Reinvestigation of magnetization reversal

吉井 賢資

Journal of Applied Physics, 126(12), p.123904_1 - 123904_8, 2019/09

 被引用回数:0 パーセンタイル:100(Physics, Applied)



Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates

寺澤 知潮; 平良 隆信*; 保田 諭; 小幡 誠司*; 斉木 幸一朗*; 朝岡 秀人

Japanese Journal of Applied Physics, 58(SI), p.SIIB17_1 - SIIB17_6, 2019/08

 被引用回数:0 パーセンタイル:100(Physics, Applied)



Neutron diffraction study on martensitic transformation under compressive stress in an ordered Fe$$_{3}$$Pt

福田 隆*; 山口 貴司*; 掛下 知行*; Harjo, S.; 中本 建志*

Journal of Applied Physics, 126(2), p.025107_1 - 025107_6, 2019/07

 被引用回数:1 パーセンタイル:71.33(Physics, Applied)

We have studied the structure change of an ordered Fe$$_{3}$$Pt (degree of order $$sim$$0.75) under a compressive stress applied in the [001] direction by neutron diffraction. In the absence of the stress, the alloy exhibits a weak first order martensitic transformation at 90 K from the L1$$_{2}$$-type cubic structure to the L6$$_{0}$$-type tetragonal structure. Under the compressive stress of 100 MPa, the first order nature of the thermally-induced martensitic transformation was undetectable in the temperature range of between 70 K and 270 K. The first order nature of the stress-induced martensitic transformation was also undetectable in the stress range of between 6 MPa and 300 MPa when tested at 120 K and higher temperatures. Under these conditions, the lattice parameters change continuously both in the cooling process and in the stress-applying process. A significant stress-induced softening of lattice was observed between 120 K and 265 K but not at 93 K and 295 K.


Total-reflection high-energy positron diffraction (TRHEPD) for structure determination of the topmost and immediate sub-surface atomic layers

深谷 有喜; 河裾 厚男*; 一宮 彪彦*; 兵頭 俊夫*

Journal of Physics D; Applied Physics, 52(1), p.013002_1 - 013002_19, 2019/01

 被引用回数:2 パーセンタイル:79.11(Physics, Applied)



Local structure and phase transitions of KNbO$$_3$$

米田 安宏; 尾原 幸治*; 永田 肇*

Japanese Journal of Applied Physics, 57(11S), p.11UB07_1 - 11UB07_6, 2018/11

 被引用回数:4 パーセンタイル:52.2(Physics, Applied)



Characterization of SiO$$_{2}$$ reduction reaction region at void periphery on Si(110)

矢野 雅大; 魚住 雄輝*; 保田 諭; 塚田 千恵*; 吉田 光*; 吉越 章隆; 朝岡 秀人

Japanese Journal of Applied Physics, 57(8S1), p.08NB13_1 - 08NB13_4, 2018/07

 被引用回数:1 パーセンタイル:86.78(Physics, Applied)

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.


Spin caloric effects in antiferromagnets assisted by an external spin current

Gomonay, O.*; 山本 慧; Sinova, J.*

Journal of Physics D; Applied Physics, 51(26), p.264004_1 - 264004_9, 2018/07

 被引用回数:4 パーセンタイル:52.2(Physics, Applied)



Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

矢野 雅大; 魚住 雄輝*; 保田 諭; 朝岡 秀人

Japanese Journal of Applied Physics, 57(6S1), p.06HD04_1 - 06HD04_4, 2018/06

 被引用回数:3 パーセンタイル:60.22(Physics, Applied)

We have observed oxide decomposition process on Si(110). We have succeeded to observe metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.


SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

渡邉 健太*; 寺島 大貴*; 野崎 幹人*; 山田 高寛*; 中澤 敏志*; 石田 昌宏*; 按田 義治*; 上田 哲三*; 吉越 章隆; 細井 卓治*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 被引用回数:8 パーセンタイル:29.21(Physics, Applied)

AlGaN/GaN MOS-HFETの高性能化・ノーマリオフ化には、高品質なゲート絶縁膜が必要である。これまで我々はAl$$_{2}$$O$$_{3}$$に窒素を添加したAlON膜がAl$$_{2}$$O$$_{3}$$膜よりも電子注入耐性および界面特性に優れることを明らかにしている。本研究では、その良好な界面特性を維持しつつ、更に絶縁性の向上を図るため、薄いAlON界面層上にバンドギャップの広いSiO$$_{2}$$膜を積層したSiO$$_{2}$$/AlON/AlGaN/GaN構造について検討した。その結果、AlON界面層の厚さが約3.3nmと薄い場合でも、SiO$$_{2}$$/AlON積層構造はAlON単層の場合と同等の容量-電圧特性を示し、良好な界面特性を示した。また、絶縁破壊電界はAlON単層と比べて2倍以上の約8MV/cmを示した。以上の結果は、SiO$$_{2}$$/AlON積層構造が優れた界面特性と絶縁特性を両立するGaN MOSデバイス向けゲート絶縁膜として有望であることを意味している。


Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

野崎 幹人*; 渡邉 健太*; 山田 高寛*; Shih, H.-A.*; 中澤 敏志*; 按田 義治*; 上田 哲三*; 吉越 章隆; 細井 卓治*; 志村 考功*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 被引用回数:8 パーセンタイル:29.21(Physics, Applied)

MOSゲート構造の採用によるAlGaN/GaN-HFETの高性能化のためにはリーク電流が少なく、かつ界面特性が良好なゲート絶縁膜が必要である。Al$$_{2}$$O$$_{3}$$膜は比較的高い誘電率と広いバンドギャップを持つことから有望視されているが、界面特性向上技術の開発や電子注入耐性の低さによる閾値電圧変動等の課題を抱えている。本研究ではALD法によるAlON成膜を検討した。MOSキャパシタのC-V特性には界面欠陥応答に起因する周波数分散がほとんど見られておらず、AlON/AlGaN界面が良好であることがわかる。AlON試料は同様にALD法で堆積したAl$$_{2}$$O$$_{3}$$ MOSキャパシタよりもシフト量が少なく、電子注入耐性の向上も確認できた。これらの良好な特性は本研究のALD-AlON膜がGaN MOSデバイス向けのゲート絶縁膜として有望であることを示している。


Effective adsorption and collection of cesium from aqueous solution using graphene oxide grown on porous alumina

圓谷 志郎*; 本田 充紀; 下山 巖; Li, S.*; 楢本 洋*; 矢板 毅; 境 誠司*

Japanese Journal of Applied Physics, 57(4S), p.04FP04_1 - 04FP04_4, 2018/04

 被引用回数:3 パーセンタイル:61.62(Physics, Applied)

Graphene oxide (GO) with a large surface area was synthesized by the direct growth of GO on porous alumina using chemical vapor deposition to study the Cs adsorption mechanism in aqueous solutions. Electronic structure analysis employing in situ near-edge X-ray absorption fine structure spectroscopy and X-ray photoelectron spectroscopy measurements clarifies the Cs atoms bond via oxygen functional groups on GO in the aqueous solution. The Cs adsorption capacity was found to be as high as 650-850 mg g$$^{-1}$$, which indicates that the GO/porous alumina acts as an effective adsorbent with high adsorption efficiency for radioactive nuclides in aqueous solutions.

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