Direct energy conversion using Ni/SiC Schottky junction in Np and Am gamma ray regions

Fukuda, Tatsuo; Kobata, Masaaki; Shobu, Takahisa; Yoshii, Kenji; Kamiya, Junichiro; Iwamoto, Yosuke; Makino, Takahiro*; Yamazaki, Yuichi*; Oshima, Takeshi*; Shirai, Yasuhiro*; et al.

Journal of Applied Physics, 132(24), p.245102_1 - 245102_8, 2022/12

https://doi.org/10.1063/5.0099136

Direct energy conversion has been investigated using Ni/SiC Schottky junctions with the irradiation of monochromatized synchrotron X-rays simulating the gamma rays of Np (30 keV) and Am (60 keV). From current-voltage measurements, electrical energies were obtained for both kinds of gamma rays. The energy conversion efficiencies were found to reach up to 1.6%, which is comparable to those of a few other semiconducting systems reported thus far. This result shows a possibility of energy recovery from nuclear wastes using the present system, judging from the radiation tolerant nature of SiC. Also, we found different conversion efficiencies between the two samples. This could be understandable from hard X-ray photoelectron spectroscopy and secondary ion mass spectroscopy measurements, suggesting the formation of Ni-Si compounds at the interface in the sample with a poor performance. Hence, such combined measurements are useful to provide information that cannot be obtained by electrical measurements alone.

Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

Hirata, Yuho; Kai, Takeshi; Ogawa, Tatsuhiko; Matsuya, Yusuke; Sato, Tatsuhiko

Japanese Journal of Applied Physics, 61(10), p.106004_1 - 106004_6, 2022/10

https://doi.org/10.35848/1347-4065/ac8ae9

Some radiation effects such as pulse-height defects and soft errors can cause problems in silicon (Si) devices. Local energy deposition in microscopic scales is essential information to elucidate the mechanism of these radiation effects. We, therefore, developed an electron track-structure model, which can simulate local energy deposition down to nano-scales, dedicated to Si and implemented it into PHITS. Then, we verified the accuracy of our developed model by comparing the ranges and depth-dose distributions of electrons obtained from this study with the corresponding experimental values and other simulated results. As an application of the model, we calculated the mean energies required to create an electron-hole pair, the so-called epsilon value. We found that the threshold energy for generating secondary electrons reproducing the epsilon value is 2.75 eV, consistent with the corresponding data deduced from past theoretical and computational studies. Since the magnitudes of the radiation effects on Si devices largely depend on the epsilon value, the developed code is expected to contribute to precisely understanding the mechanisms of pulse-height defects and semiconductor soft errors.

Comprehensive physical and electrical characterizations of NO nitrided SiO/4H-SiC(110) interfaces

Nakanuma, Takato*; Iwakata, Yu*; Watanabe, Arisa*; Hosoi, Takuji*; Kobayashi, Takuma*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 61(SC), p.SC1065_1 - SC1065_8, 2022/05

https://doi.org/10.35848/1347-4065/ac4685

Nitridation of SiO/4H-SiC(110) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage () measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

structure observation of pyroelectric ceramics during power generation cycle

Kawasaki, Takuro; Fukuda, Tatsuo; Yamanaka, Satoru*; Sakamoto, Tomokazu*; Murayama, Ichiro*; Kato, Takanori*; Baba, Masaaki*; Hashimoto, Hideki*; Harjo, S.; Aizawa, Kazuya; et al.

Journal of Applied Physics, 131(13), p.134103_1 - 134103_7, 2022/04

https://doi.org/10.1063/5.0084166

Autoradiography system with phosphor powder (ZnS:Ag) for imaging radioisotope dynamics in a living plant

Kurita, Keisuke; Sakai, Takuro; Suzui, Nobuo*; Yin, Y.-G.*; Sugita, Ryohei*; Kobayashi, Natsuko*; Tanoi, Keitaro*; Kawachi, Naoki*

Japanese Journal of Applied Physics, 60(11), p.116501_1 - 116501_4, 2021/11

https://doi.org/10.35848/1347-4065/ac2b50

Radioisotope tracer imaging is useful for studying plant physiological phenomena. In this study, we developed an autoradiography system with phosphor powder (ZnS:Ag), "Live-autoradiography", for imaging radioisotope dynamics in a living plant. This system visualizes the element migration and accumulation in intact plants continuously under a light environment. An imaging test was performed on point sources of Cs, with a radioactivity of 10-100 kBq of being observed; this indicates satisfactory system linearity between the image intensity and the radioactivity of Cs. Moreover, dynamics imaging of Cs was performed on an intact soybean plant for four days. The serial images indicated Cs accumulation in the node, vein, and growing point of the plant. The developed system can be used for studying plant physiological phenomena and can be employed for quantitative measurement of radionuclides.

Improved performance of wide bandwidth neutron-spin polarizer due to ferromagnetic interlayer exchange coupling

Maruyama, Ryuji; Yamazaki, Dai; Aoki, Hiroyuki; Akutsu, Kazuhiro*; Hanashima, Takayasu*; Miyata, Noboru*; Soyama, Kazuhiko; Bigault, T.*; Saerbeck, T.*; Courtois, P.*

Journal of Applied Physics, 130(8), p.083904_1 - 083904_10, 2021/08

https://doi.org/10.1063/5.0062072

Nanoscale structural analysis of BiNaTiO

Yoneda, Yasuhiro; Noguchi, Yuji*

Japanese Journal of Applied Physics, 59(SP), p.SPPA01_1 - SPPA01_7, 2020/11

https://doi.org/10.35848/1347-4065/aba2c2

We investigate A-site cation ordering in the ferroelectric perovskite BiNaTiO (BNT) by synchrotron X-ray total scattering. Although BNT has a problem of a low depolarization temperature, it is promising a lead-free piezoelectric material. Since the depolarization temperature is presumed to correspond to a relaxer like gradual order-disorder phase transition, local structure analysis is necessary to understand the structure of the diorder phase. Through this approach, the elusive connection between chemical heterogeneity and structural heterogeneity is revealed. Because of the large randomness, the Ti off-center shift is averaged out beyond the unit cell and the structure becomes very close to the average structure beyond the unit cell.

Tolerance of spin-Seebeck thermoelectricity against irradiation by swift heavy ions

Okayasu, Satoru; Harii, Kazuya*; Kobata, Masaaki; Yoshii, Kenji; Fukuda, Tatsuo; Ishida, Masahiko*; Ieda, Junichi; Saito, Eiji

Journal of Applied Physics, 128(8), p.083902_1 - 083902_7, 2020/08

AA2020-0071.pdf:0.69MB

https://doi.org/10.1063/5.0014229

Development of microwave-assisted, laser-induced breakdown spectroscopy without a microwave cavity or waveguide

Oba, Masaki; Miyabe, Masabumi; Akaoka, Katsuaki; Wakaida, Ikuo

Japanese Journal of Applied Physics, 59(6), p.062001_1 - 062001_6, 2020/06

https://doi.org/10.35848/1347-4065/ab8b3f

Using a semiconductor microwave source and a coaxial cable for microwave transmission, a compact microwave-assisted, laser-induced breakdown spectroscopy system without a microwave cavity or waveguide was developed. Several types of electrode heads were tested, so that the emission intensity was 50 times larger than without microwave. The limit of the enhancement effect was also found.

Toward technological contributions to remote operations in the decommissioning of the Fukushima Daiichi Nuclear Power Station

Kawabata, Kuniaki

Japanese Journal of Applied Physics, 59(5), p.050501_1 - 050501_9, 2020/05

https://doi.org/10.35848/1347-4065/ab82ad

This paper describes the decommissioning work being undertaken at the Fukushima Daiichi Nuclear Power Station of the Tokyo Electric Power Company Holdings Inc.'s (FDNPS) using remote controlled robotic systems, as well as lessons learned from past remote task executions. We also summarize the issues to be considered in promoting safe, steady, and efficient decommissioning based on past experiences. In response to these issues, we are developing test methods for performance evaluation of the robots for nuclear decommissioning, robot simulator for operator proficiency training, and information generation methods to improve the operator's status awareness. The current status of technological development is also described.