Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Constantini, J.-M.*; Seo, P.*; Yasuda, Kazuhiro*; Bhuian, AKM S. I.*; Ogawa, Tatsuhiko; Gourier, D.*
Journal of Luminescence, 226, p.117379_1 - 117379_10, 2020/10
Times Cited Count:9 Percentile:53.99(Optics)Cathodo-luminescence is used for detection of lattice defects, in particular oxygen vacancies in ceramics induced by electrons. However, how oxygen vacancy production efficiency depends on sample temperature, incoming electron flux, and electron energy was not clear. In this study, oxygen vacancies were made in the specimens of CeO by irradiation of 400-1250 keV electrons and the cathodoluminescence from thus induced vacancies were observed by photo-fiber probe combined with CCD. As the result, the dependence of luminescence intensity on specimen temperature depends on the carrier trapping frequency and luminescence efficiency while luminescence center production/annihilation speed determines the dependency on the incoming electron flux. Moreover, radiation transport calculation conducted by the particle transport simulation code PHITS indicates that the number of electrons above the defect production threshold energy is vital to explain incoming electron energy dependence.
Constantini, J.-M.*; Ogawa, Tatsuhiko; Bhuian, A. S. I.*; Yasuda, Kazuhiro*
Journal of Luminescence, 208, p.108 - 118, 2019/04
Times Cited Count:5 Percentile:32.20(Optics)Cathodo-luminescence is used for detection of lattice defects, in particular oxygen vacancies in ceramics induced by electrons. However, how oxygen vacancy production efficiency depends on sample temperature, incoming electron flux, and electron energy was not clear. In this study, oxygen vacancies were made in the specimens of AlO
, ZrO
:Y(Yttrium stabilized zirconia), MgAl
O
, and TiO
by irradiation of 400-1250keV electrons and the cathodoluminescence from thus induced vacancies were observed by photo-fiber probe combined with CCD. As the result, the dependence of luminescence intensity on specimen temperature depends on the carrier trapping frequency and luminescence efficiency while luminescence center production/annihilation speed determines the dependency on the incoming electron flux. Moreover, radiation transport calculation conducted by the particle transport simulation code PHITS indicates that the number of electrons above the defect production threshold energy is vital to explain incoming electron energy dependence.
Koshimizu, Masanori*; Iwamatsu, Kazuhiro*; Taguchi, Mitsumasa; Kurashima, Satoshi; Kimura, Atsushi; Yanagida, Takayuki*; Fujimoto, Yutaka*; Watanabe, Kenichi*; Asai, Keisuke*
Journal of Luminescence, 169(Part B), p.678 - 681, 2016/01
We analyzed the effects of linear energy transfer (LET) on the scintillation properties of a Li glass scintillator, GS20. The scintillation time profiles were measured by using pulsed ion beams having different LETs. The rise in the scintillation time profiles was faster for higher LET, whereas the decay part was not significantly different for largely different LETs. The LET effects in the rise was ascribed to the effects of excited states interaction during the energy transfer process from the host glass to the luminescent centers, Ce ions. Supposing that the light yield decreases with LET, the fast rise at high LET was explained in terms of the competition between the energy transfer and the quenching due to the excited states interaction.
Wells, J. P.*; Sugiyama, Akira; Han, T. P. J.*; Gallagher, H. G.*
Journal of Luminescence, 87-89, p.1029 - 1031, 2000/05
Times Cited Count:10 Percentile:47.31(Optics)no abstracts in English
Wells, T. P. R.*; Sugiyama, Akira; Han, T. P. J.*; Gallagher, H. G.*
Journal of Luminescence, 85, p.91 - 102, 1999/00
Times Cited Count:31 Percentile:77.80(Optics)no abstracts in English