Bonding structure of ultrathin oxides on Si(110) surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Suemitsu, Maki*; Narita, Yuzuru*; Teraoka, Yuden; Yoshigoe, Akitaka

Materials Research Society Symposium Proceedings, Vol.1074, p.36 - 40, 2008/00

In this study, we have investigated the bonding structure of ultrathin oxide films on Si(110) surface by real-time SR-PES experiments. Experiments were conducted at surface chemistry end-station settled at BL23SU in SPring-8. The oxidation temperature was 813 K and the O pressure was 1.110 Pa. As a result, we found that one of the surface core-level shifts in Si 2p spectrum, related to the 1st and the 2nd layer Si atoms, decreases rapidly, coincident with the rapid initial development of the O1s spectrum. This indicates high reactivity of the Si(110)-162 reconstructed surface with oxygen molecules.