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Journal Articles

Residual stresses in steel rod with collar formed by partial diameter-enlarging technique

Fukuda, Kojiro*; Tomota, Yo*; Harjo, S.; Gong, W.*; Woo, W.*; Seong, B. S.*; Kuwahara, Yoshitaka*; Ikuta, Fumiaki*

Materials Science and Technology, 33(2), p.172 - 180, 2017/01

Journal Articles

Investigation of microstructure in additive manufactured Inconel 625 by spatially resolved neutron transmission spectroscopy

Tremsin, A. S.*; Gao, Y.*; Dial, L. C.*; Grazzi, F.*; Shinohara, Takenao

Science and Technology of Advanced Materials, 17(1), p.324 - 336, 2016/07

 Times Cited Count:14 Percentile:36.36(Materials Science, Multidisciplinary)

Journal Articles

Studies of radiation effects on semiconductor devices at JAEA

Oshima, Takeshi

Proceedings of the 30th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.9 - 16, 2011/12

no abstracts in English

Journal Articles

Unrepairable DNA damage site composed of clustered lesions along ion particle tracks

Yokoya, Akinari; Shikazono, Naoya; Fujii, Kentaro; Ushigome, Takeshi*; Suzuki, Masao*; Urushibara, Ayumi; Watanabe, Ritsuko

Proceedings of the 27th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, 8 Pages, 2008/12

It has been indicated that ion particle irradiation to living cells causes a clustered DNA damage site, defined as two or more lesions formed within a few nano meters, in a cell nuclei. The clustered damage is less readily repaired by enzymatic repair system so that it induces biological effects, such as mutation induction. We have studied the mechanism of clustered damage induction by biochemical approaches using closed circular plasmid DNA as a model molecule to be irradiated with He ions from TIARA. We have used base excision repair proteins as enzymatic probes to quantify base lesions. We have also applied a novel method using DNA denaturation to visualize multiple single strand breaks which hardly be detected by conventional method. Our recent results will be reported in this seminar.

Journal Articles

Transient current and mapping using focused heavy-ion microbeams with several hundreds of MeV

Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

Proceedings of the 27th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.43 - 46, 2008/12

no abstracts in English

Journal Articles

Radiation degradation modeling of triple-junction space solar cells

Sato, Shinichiro; Imaizumi, Mitsuru*; Oshima, Takeshi

Proceedings of the 27th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.37 - 42, 2008/12

Degradation modeling of triple junction (3J) solar cell due to proton and electron irradiation is performed with the use of a one dimensional optical device simulator. By fitting external quantum efficiencies of the 3J solar cells degraded by proton or electron irradiation, the short circuit current (Isc) and open circuit voltage (Voc) are simulated. These simulated values are in good accordance with the experimental data. In this modeling, carrier removal rate of base layer ($$R_C$$) and the damage coefficient of minority carrier diffusion length ($$K_L$$) in each sub cell are considered as radiation degradation parameters. NIEL (Non Ionizing Energy Loss) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J solar cell can be predicted from correlativity between NIEL and radiation degradation parameters.

Journal Articles

Decrease in ion beam induced charge of 6H-SiC diodes

Onoda, Shinobu; Iwamoto, Naoya; Oshima, Takeshi; Hirao, Toshio; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.35 - 40, 2007/12

no abstracts in English

Journal Articles

Charge collection efficiency of 6H-SiC diodes damaged by electron irradiation

Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto; Nakano, Itsuo*; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.27 - 30, 2007/12

no abstracts in English

Journal Articles

Electrical characteristics of 6H-SiC MOSFETs after high dose irradiation

Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.31 - 34, 2007/12

no abstracts in English

Journal Articles

Possible weak magnetism in MB$$_6$$ (M: Ca, Ba) probed by muon spin relaxation and muon level-crossing resonance

Kuroiwa, Sogo*; Takagiwa, Hiroyuki*; Yamazawa, Maki*; Akimitsu, Jun*; Koda, Akihiro*; Kadono, Ryosuke*; Oishi, Kazuki; Higemoto, Wataru; Watanabe, Isao*

Science and Technology of Advanced Materials, 7(1), p.12 - 16, 2006/01

 Times Cited Count:4 Percentile:83.41(Materials Science, Multidisciplinary)

The temperature dependence of muon spin relaxation rate exhibits a significant increase below $$sim$$130 K in CaB$$_6$$ and $$sim$$110 K in BaB$$_6$$, while no sigh of spontaneous muon precession signal under a zero field is observed. Moreover, the electric field gradient at the boron site measured by muon level-crossing resonance exhibits a step like change at $$sim$$110 K in CaB$$_6$$. These results suggest a change in electronic state and the associated emergence of weak random magnetism below 110-130 K in these alkaline earth hexaborides.

Journal Articles

Depth profile of oxide-trapped charges in 6H-SiC metal-oxide-semiconductor structures irradiated with gamma-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00

no abstracts in English

Journal Articles

Hot-implantation of nitrogen and aluminumions into SiC semiconductor

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.147 - 150, 1995/00

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted $$beta$$-SiC

Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

13th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Nniv., 0, p.75 - 80, 1994/12

no abstracts in English

Journal Articles

A Luminescence study of ion-irradiated aromatic polymers

Aoki, Yasushi; Namba, Hideki; Hosoi, Fumio; Nagai, Shiro

ACS Symposium Series, 579; Polymeric Materials for Microelectronic Applications,Science and Technology, 0, p.45 - 50, 1994/00

no abstracts in English

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