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Journal Articles

Layer-number-independent two-dimensional ferromagnetism in Cr$$_3$$Te$$_4$$

Wang, Y.*; Kajihara, Shun*; Matsuoka, Hideki*; Saika, B. K.*; Yamagami, Kohei*; Takeda, Yukiharu; Wadachi, Hiroki*; Ishizaka, Kyoko*; Iwasa, Yoshihiro*; Nakano, Masaki*

Nano Letters, 22(24), p.9964 - 9971, 2022/12

 Times Cited Count:2 Percentile:79.58(Chemistry, Multidisciplinary)

Journal Articles

Spin-orbit-induced Ising ferromagnetism at a van der Waals interface

Matsuoka, Hideki*; Barnes, S. E.*; Ieda, Junichi; Maekawa, Sadamichi; Bahramy, M. S.*; Saika, B. K.*; Takeda, Yukiharu; Wadachi, Hiroki*; Wang, Y.*; Yoshida, Satoshi*; et al.

Nano Letters, 21(4), p.1807 - 1814, 2021/02

 Times Cited Count:9 Percentile:73.98(Chemistry, Multidisciplinary)

Journal Articles

Stacking fault driven phase transformation in CrCoNi medium entropy alloy

He, H.*; Naeem, M.*; Zhang, F.*; Zhao, Y.*; Harjo, S.; Kawasaki, Takuro; Wang, B.*; Wu, X.*; Lan, S.*; Wu, Z.*; et al.

Nano Letters, 21(3), p.1419 - 1426, 2021/02

 Times Cited Count:28 Percentile:94.81(Chemistry, Multidisciplinary)

Journal Articles

Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO

Meer, H.*; Schreiber, F.*; Schmitt, C.*; Ramos, R.*; Saito, Eiji; Gomonay, O.*; Sinova, J.*; Baldrati, L.*; Kl$"a$ui, M.*

Nano Letters, 21(1), p.114 - 119, 2021/01

 Times Cited Count:45 Percentile:97.1(Chemistry, Multidisciplinary)

Journal Articles

Intrinsic 2D ferromagnetism in V$$_{5}$$Se$$_{8}$$ epitaxial thin films

Nakano, Masaki*; Wang, Y.*; Yoshida, Satoshi*; Matsuoka, Hideki*; Majima, Yuki*; Ikeda, Keisuke*; Hirata, Yasuyuki*; Takeda, Yukiharu; Wadachi, Hiroki*; Kohama, Yoshimitsu*; et al.

Nano Letters, 19(12), p.8806 - 8810, 2019/12

 Times Cited Count:46 Percentile:91.62(Chemistry, Multidisciplinary)

Journal Articles

In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si

Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, S.*; Fukidome, Hirokazu*; Suemitsu, Maki*

Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10

 Times Cited Count:12 Percentile:50.13(Nanoscience & Nanotechnology)

Graphene has attracted much attention as a promising material in electronics and photonics. The graphitization temperature of 1473 K or higher of graphene-on-silicon(GOS), however, is still too high to be fully compatible with the Si technology. Here, the first application of Ni-assisted formation of graphene to the GOS method was reported. We demonstrate that the graphene formation temperature can be reduced by more than 200 K by this method. Moreover, solid-phase reactions during heating/annealing/cooling procedures have been investigated in detail by using ${{it in-situ}}$ synchrotron-radiation X-ray photoelectron spectroscopy. As a result, we clarify the role of Ni/SiC reactions, in which not only Ni silicidation and but also Ni carbonization is suggested as a key process in the formation of graphene.

Journal Articles

Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111)

Biermanns, A.*; Dimakis, E.*; Davydok, A.*; Sasaki, Takuo; Geelhaar, L.*; Takahashi, Masamitsu; Pietsch, U.*

Nano Letters, 14(12), p.6878 - 6883, 2014/12

 Times Cited Count:27 Percentile:72.89(Chemistry, Multidisciplinary)

Journal Articles

Multiterminal nanowire junctions of silicon; A Theoretical prediction of atomic structure and electronic properties

Avramov, P.; Chernozatonskii, L. A.*; Sorokin, P. B.*; Gordon, M. S.*

Nano Letters, 7(7), p.2063 - 2067, 2007/07

 Times Cited Count:13 Percentile:51.85(Chemistry, Multidisciplinary)

Using an empirical scheme, the atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by the presence of the proposed objects. The extended Huckel theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.

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