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Ogawa, Shuichi*; Hozumi, Hideaki*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Kaga, Toshiteru*; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.67 - 70, 2011/01
The oxidation-enhanced Ge atoms condensation kinetics on an SiGe
alloy layer has been investigated by the real-time photoemission spectroscopy using the synchrotron radiation. The Si
Ge
alloy layer was formed with a thermal evaporation method on a p-type Si(001) surface, and this alloy layer was oxidized at Langmuir-type adsorption. During oxidation at 773 KC, it is found that the Ge atoms are not oxidized, only SiO
film is formed on the Si
Ge
alloy layer. Furthermore, the desorption of GeO molecules does not occur during the oxidation of alloy layer. On the other hand, not only Si atoms but also Ge atoms are oxidized at room temperature. This difference can be explained using the unified oxidation model mediated by the point defect generation, namely it is suggested that a lot of vacancies are generated during oxidation of the Si
Ge
alloy layer at 773K and Ge atoms diffuse through these vacancies.
Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.181 - 184, 2010/01
The oxidation kinetics on the SiC
alloy layer has been investigated using the real-time XPS measurement. Experiments were performed at the BL23SU of SPring-8. The Si
C
alloy layer was formed with exposing a p-type Si(001) surface to ethylene, and the Si
C
alloy layer was oxidized at Langmuir-type adsorption (773 K) and 2D oxide island growth (933 K), respectively. In case of Langmuir-type adsorption, it is found that no carbon atoms are oxidized and carbon concentration at the SiO
/Si interface increases. These results indicate the carbon atom condensation occurs, leading to the SiO
/Si
C
/Si layers formation. On the other hand, the carbon concentration decrease by 20% in spite of the etching of 38 Si layers in the 2D oxide island growth. Based on these results, it is found that the diffusion of carbon atoms is occurred due to not only oxide growth but also Si etching.
Hosoi, Takuji*; Okamoto, Gaku*; Kutsuki, Katsuhiro*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.145 - 148, 2010/01
We developed high quality high-/Ge gate stacks with reduced leakage current and superior interface quality, which was fabricated by direct deposition of ZrO
on Ge substrate and thermal oxidation. Synchrotron radiation photoelectron spectroscopy revealed that thermal oxidation at 823 K caused not only an intermixing between ZrO
and Ge but also the formation of GeO
at the interlayer. We obtained an equivalent oxide thickness (EOT) of 1.9 nm, and an interface state density of 10
cm
eV
for Au/ZrO
/Ge capacitors. Furthermore, we found that the A1
0
capping on the Zr0
1ayer is effective for decreasing EOT. The interface state density as low as 5.3
10
cm
eV
was obtained for the Al
O
/ZrO
/Ge stack with 30 min oxidation. The EOT could be reduced to l.6 nm by 10 min oxidation. The leakage current was two orders of magnitude lower than the conventional poly-Si/SiO
/Si stack.