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Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Hirao, Norie; Honda, Mitsunori; Izumi, Toshinori; Ikeura, Hiromi*
Photon Factory Activity Report 2013, Part B, P. 546, 2014/00
The molecular orientation is one of the important factors for controlling various properties in organic semiconductor materials. Films are usually heterogeneous. Thus they exist as a mixture of microscopic domains which have a variety of orientation directions. Therefore, it is essential to observe selectively microscopic domains with different orientation direction. In this work, we have developed the photoelectron emission microscope (PEEM) system combined with the linearly polarized vacuum ultraviolet (VUV) light or synchrotron radiation (SR) X-rays. PEEM images for poly(3-hexylthiophene), P3HT thin films were observed under synchrotron X-ray irradiation with linearly polarization. In conclusion, it was found that PEEM with polarized synchrotron can be a powerful tool that gives information of molecular orientation in nano-meter scale.
Ikeura, Hiromi*; Sekiguchi, Tetsuhiro
Photon Factory Activity Report 2013, Part B, P. 518, 2014/00
Organic electrically conducting 
-stacked small molecules are widely regarded as promising materials for future application of low-cost and flexible nanoelectronics. Pentacene is one of the most promising organic semiconductors because of its excellent device performance. Direct measurements of electronic structures of unoccupied states of organic semiconductors lead to better understanding of mechanism of electron conduction. For probing unoccupied partial density of states (DOS), X-ray absorption spectroscopy (XAS) is commonly used, where selective excitation of the 1s core electron to the unoccupied conduction band is possible. The molecular orientation of pentacene derivative has been investigated by angle dependent XAS measurements. Electronic states were calculated by DVX
method.
Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka
Photon Factory Activity Report 2013, Part B, P. 227, 2014/00
In the present study, we examined to perform depth profiling with X-ray absorption spectroscopy (XAS) by changing electron energies (5-50 eV) for detection in order to develop non-destructive depth profiling method with chemical state information. Gold thin films (1-10 nm) deposited on Si(100) were used for specimens. The Si/Au ratios were calculated from the peak heights of each edge using observed XAS spectra. Obvious correlation between the Si/Au ratio and the electron energy is observed. With decreasing electron energy, the ratio increased significantly. This means that by reducing electron energy, information on deeper region of the surface can be obtained. These results indicate that by changing electron energies for detection, it is possible to perform non-destructive depth profiling in XAS analysis.
