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Journal Articles

Elemental substitution effects in multiferroic ${it R}$Fe$$_{2}$$O$$_{4}$$ (${it R}$: rare earths)

Yoshii, Kenji; Funae, Takeshi*; Mizumaki, Masaichiro*; Ejiri, Hiroki*; Ikeda, Naoshi*; Saito, Hiroyuki; Matsumura, Daiju

Physica Status Solidi (C), 12(6), p.841 - 844, 2015/06

https://doi.org/10.1002/pssc.201400250
 Times Cited Count：1 Percentile：39.07(Physics, Condensed Matter)

We report the effects of elemental substitutions in multiferroic ${it R}$Fe$$_{2}$$O$$_{4}$$ ($$R$$: Y, Ho-Lu, In). The substitution by nonmagnetic Ga$$^{3+}$$ at the Fe site, which has not been reported so far, shows a drastic decrease in the ferrimagnetic transition temperature ($$T_{rm N}$$). This is plausibly owing to the suppression of magnetic interactions between Fe ions, based on our previous results of other substituted systems such as ${it R}$FeCoO$$_{4}$$. Dielectric constants near room temperature were comparable to those of $$R$$Fe$$_{2}$$O$$_{4}$$. The suppression of dielectric loss in this system is suitable to application. The ${it R}$-site substitution was also attempted by the large R$$^{3+}$$ ions such as Dy$$^{3+}$$. The solubility limit was up to about 10% of ${it R}$ ions, as confirmed by XRD and EXAFS measurements. $$T_{rm N}$$ was raised by 5-10 K for Dy$$^{3+}$$ substitution.

Journal Articles

Electronic structure of BaFeO$$_{3}$$ studied by X-ray spectroscopy

Mizumaki, Masaichiro*; Fujii, Hitoshi*; Yoshii, Kenji; Hayashi, Naoaki*; Saito, Takashi*; Shimakawa, Yuichi*; Uozumi, Takayuki*; Takano, Mikio*

Physica Status Solidi (C), 12(6), p.818 - 821, 2015/06

https://doi.org/10.1002/pssc.201400252
 Times Cited Count：10 Percentile：93.64(Physics, Condensed Matter)

We investigated the electronic structure of BaFeO$$_{3}$$ by using HAXPES and XAS measurements and first principle studies. The experimental and theoretical results indicated that BaFeO$$_{3}$$ is a negative charge transfer compound. We concluded that the on-site Coulomb energy and the strong hybridization between Fe-3d and O-2p orbitals play a very important role of emergence of negative charge transfer. And we found the new structure in the Fe-2p XPS spectrum and concluded this structure is originated from non-local screening.

Journal Articles

Ion beam analysis of quaternary Heusler alloy Co$$_{2}$$(Mn$$_{1-x}$$Fe$$_{x}$$)Si(111) epitaxially grown on Ge(111)

Kawakubo, Yuki*; Noguchi, Masaya*; Hirata, Tomoaki*; Narumi, Kazumasa; Sakai, Seiji; Yamada, Shinya*; Hamaya, Kohei*; Miyao, Masanobu*; Maeda, Yoshihito

Physica Status Solidi (C), 10(12), p.1828 - 1831, 2013/12

https://doi.org/10.1002/pssc.201300367
 Times Cited Count：0 Percentile：0.00(Nanoscience & Nanotechnology)

Journal Articles

RBS study of disordering of Fe$$_{3-x}$$Mn$$_{x}$$Si/Ge(111) heteroepitaxial interfaces

Noguchi, Masaya*; Hirata, Tomoaki*; Kawakubo, Yuki*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito

Physica Status Solidi (C), 10(12), p.1732 - 1734, 2013/12

https://doi.org/10.1002/pssc.201300380
 Times Cited Count：0 Percentile：0.00(Nanoscience & Nanotechnology)

Journal Articles

Optimization of substrate pretreatment and deposition conditions for epitaxial growth of $$beta$$-FeSi$$_2$$ film on Si(100)

Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi

Physica Status Solidi (C), 10(12), p.1699 - 1703, 2013/12

https://doi.org/10.1002/pssc.201300355
 Times Cited Count：0 Percentile：0.00(Nanoscience & Nanotechnology)

Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of $$beta$$-FeSi$$_2$$ films formed on Si substrate was investigated. The substrates were treated with Ne$$^+$$ ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the epitaxial relationship of $$beta$$-FeSi$$_2$$ (100) // Si (100) were defined. Complicated dependence of these experimental parameters on the film structure indicated that careful optimization of substrate treatment conditions and deposition parameters would enable to obtain $$beta$$-FeSi$$_2$$ films with excellent crystalline properties.

Journal Articles

Magnetoresistance effects in current-perpendicular-to-plane structures based on Fe$$_{3}$$Si/FeSi$$_{2}$$ artificial lattices

Sakai, Kenichiro*; Noda, Yuta*; Takeda, Kaoru*; Takeda, Masayasu; Yoshitake, Tsuyoshi*

Physica Status Solidi (C), 10(12), p.1862 - 1865, 2013/12

https://doi.org/10.1002/pssc.201300322
 Times Cited Count：1 Percentile：52.06(Nanoscience & Nanotechnology)

Journal Articles

Defect characterization in compositionally graded InGaAs layers on GaAs (001) grown by MBE

Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11

https://doi.org/10.1002/pssc.201300284
 Times Cited Count：4 Percentile：82.59(Physics, Applied)

Journal Articles

Gutzwiller method for heavy-fermion systems under a magnetic field

Kubo, Katsunori

Physica Status Solidi (C), 10(3), p.544 - 548, 2013/03

https://doi.org/10.1002/pssc.201200762
 Times Cited Count：5 Percentile：88.73(Materials Science, Multidisciplinary)

Journal Articles

Effect of oxygen-to-metal ratio on densification behavior in the sintering process of PuO$$_{2}$$ pellet

Uchida, Teppei; Sunaoshi, Takeo*; Kato, Masato

Physica Status Solidi (C), 10(2), p.193 - 196, 2013/02

https://doi.org/10.1002/pssc.201200475
 Times Cited Count：6 Percentile：91.17(Materials Science, Multidisciplinary)

Journal Articles

Measurement of oxygen chemical diffusion in PuO$$_{2-x}$$ and analysis of oxygen diffusion in PuO$$_{2-x}$$ and (Pu,U)O$$_{2-x}$$

Kato, Masato; Uchida, Teppei; Sunaoshi, Takeo*

Physica Status Solidi (C), 10(2), p.189 - 192, 2013/02

https://doi.org/10.1002/pssc.201200454
 Times Cited Count：5 Percentile：88.73(Materials Science, Multidisciplinary)

Journal Articles

Photoluminescence properties of carbon-doped $$beta$$-FeSi$$_{2}$$ nanocrystals

Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji

Physica Status Solidi (C), 9(10-11), p.1884 - 1887, 2012/10

https://doi.org/10.1002/pssc.201200058
 Times Cited Count：4 Percentile：87.30(Materials Science, Multidisciplinary)

We report enhancement of intrinsic photoluminescence (PL) from $$beta$$-FeSi$$_{2}$$ nanocrystals by doping carbon. In the appropriate dose of C$$_{60}$$$$^{+}$$ ion implantation into the average nanocrystal size of 14 nm, the PL intensity was enhanced by 260% and increase of the exciton binding energy of 1.8 meV in comparison with that of the non-doped nanocrystal. Furthermore, we found that there was a clear correlation between the PL enhancement and increase of the exciton binding energy. This important result suggests that carbon atoms doped in the silicide lattice may play as an isoelectronic trap and probably form bound excitons with stable states as predicted theoretically. We found a new mechanism of the PL enhancement for $$beta$$-FeSi$$_{2}$$ nanocrystals.

Journal Articles

Enhancement of IR light emission from $$beta$$-FeSi$$_{2}$$ nanocrystals embedded in Si

Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji

Physica Status Solidi (C), 9(10-11), p.1888 - 1891, 2012/10

https://doi.org/10.1002/pssc.201200072
 Times Cited Count：3 Percentile：81.80(Materials Science, Multidisciplinary)

We have systematically investigated photoluminescence (PL) properties of $$beta$$-phase nanocrystals which are formed by a phase transition from metastable $$gamma$$-FeSi$$_{2}$$ with a Fluorite structure to $$beta$$-FeSi$$_{2}$$, and succeeded in enhancement of the PL intensity in the optimum conditions of double annealing process. For the PL enhancement, the time of postannealing at 800$$^{circ}$$C is dominated by the time of the preannealing at 400 or 500$$^{circ}$$C which is related to amount of the $$gamma$$-phase. After discussing some possible factors, we speculate that the PL enhancement observed in this study may be attributed mainly to improvement of the interface condition between the nanocrystal and Si, because the crystallographic epitaxial relationship among the phases, Si(111)//$$gamma$$(111)//$$beta$$(202)/(220) can be maintained during precipitation of the nanocrystal on Si(111).

Journal Articles

Formation of boron nitride ultra-thin films on Si(111)

Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.*

Physica Status Solidi (C), 9(6), p.1450 - 1453, 2012/06

https://doi.org/10.1002/pssc.201100665
 Times Cited Count：3 Percentile：72.54(Physics, Applied)

no abstracts in English

Journal Articles

Surface study of organopalladium molecules on S-terminated GaAs

Konishi, Tomoya*; Nishiwaki, Nagatoshi*; Tojo, Takashi*; Ishikawa, Takuma*; Teraoka, Teruki*; Ueta, Yukiko*; Kihara, Yoshifumi*; Moritoki, Hideji*; Tono, Tatsuo*; Musashi, Mio*; et al.

Physica Status Solidi (C), 8(2), p.405 - 407, 2011/02

https://doi.org/10.1002/pssc.201000436
 Times Cited Count：3 Percentile：73.96(Engineering, Electrical & Electronic)

Journal Articles

Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT

Okada, Hiroshi*; Takemoto, Kazumasa*; Oikawa, Fumitake*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi

Physica Status Solidi (C), 6(Suppl.2), p.S631 - S634, 2009/05

Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I-V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity.

Journal Articles

Reflection high-energy positron diffraction study of surface super-structures

Kawasuso, Atsuo; Fukaya, Yuki; Hayashi, Kazuhiko*; Hashimoto, Mie; Ichimiya, Ayahiko

Physica Status Solidi (C), 4(10), p.3924 - 3927, 2007/09

https://doi.org/10.1002/pssc.200675815
 Times Cited Count：0 Percentile：0.00(Physics, Atomic, Molecular & Chemical)

In this study, we performed the positron energy loss spectroscopy measurements from several surfaces using energy-filtered reflection high-energy positron diffraction. For Si(111)-7$$times$$7 surface, we observed at least five distinct loss peaks. The interval of energy loss peaks is approximately 10 eV, which corresponds to the surface plasmon loss energy of silicon. The positron energy loss spectra are well-approximated by the Poisson distribution. The average excitation number of surface plasmon is 2.6 under the total reflection condition. This number is similar to what expected for electrons at zero glancing angle. Thus, positrons lose their energy due to surface plasmon excitation much more sufficiently than electrons. We found that the specular spot is broadened in the total reflection region especially at the tail part due to plasmon excitation.

Journal Articles

Design of a positron microprobe using magnetic lenses

Maekawa, Masaki; Yu, R.; Kawasuso, Atsuo

Physica Status Solidi (C), 4(10), p.4016 - 4019, 2007/09

https://doi.org/10.1002/pssc.200675821
 Times Cited Count：4 Percentile：72.81(Physics, Atomic, Molecular & Chemical)

no abstracts in English

Journal Articles

Characterization of swift heavy ion-induced defects in Fe-Rh alloy by using positron beam technique

Hori, Fuminobu*; Fukuzumi, Masafumi*; Kawasuso, Atsuo; Zushi, Yoshihiro*; Chimi, Yasuhiro; Ishikawa, Norito; Iwase, Akihiro*

Physica Status Solidi (C), 4(10), p.3530 - 3533, 2007/09

https://doi.org/10.1002/pssc.200675829
 Times Cited Count：0 Percentile：0.00(Physics, Atomic, Molecular & Chemical)

no abstracts in English

Journal Articles

Characterization of ion beam-induced SiC-OI structures by positron annihilation spectroscopy

Maekawa, Masaki; Yu, R.; Kawasuso, Atsuo

Physica Status Solidi (C), 4(10), p.3680 - 3683, 2007/09

https://doi.org/10.1002/pssc.200675822

no abstracts in English

Journal Articles

Positron microscopic analysis of crack failure in stainless steels

Yu, R.; Maekawa, Masaki; Miwa, Yukio; Hirade, Tetsuya; Nishimura, Akihiko; Kawasuso, Atsuo

Physica Status Solidi (C), 4(10), p.3577 - 3580, 2007/09

https://doi.org/10.1002/pssc.200675839
 Times Cited Count：4 Percentile：72.81(Physics, Atomic, Molecular & Chemical)

Employing a positron beam with lateral resolution of about 30 micometer, we performed one and two dimensional scan of crack tips in mechanically fatigued as well as stress corrosion cracked (SCC) stainless steels. Results suggest the existence of quite different crack failure mechanisms in the two types of specimen. In agreement with normal crack propagation principal, creation of dislocations and vacancies close to a crack in the mechanically fatigued sample lead to an expected narrowing of the positron annihilation 511 keV Doppler broadening $$gamma$$-ray peak (S(crack)/S(bulk)=1.01). Contrarily, widening of the Doppler broadening peak was observed for the SCC specimen (S(crack)/S(bulk)=0.97). Such phenomenon was ascribed to the micro-compositional and micro-structural differences between the studied samples.

30 (Records 1-20 displayed on this page)