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Yoshii, Kenji; Funae, Takeshi*; Mizumaki, Masaichiro*; Ejiri, Hiroki*; Ikeda, Naoshi*; Saito, Hiroyuki; Matsumura, Daiju
Physica Status Solidi (C), 12(6), p.841 - 844, 2015/06
Times Cited Count:1 Percentile:38.69(Physics, Condensed Matter)We report the effects of elemental substitutions in multiferroic Fe
O
(
: Y, Ho-Lu, In). The substitution by nonmagnetic Ga
at the Fe site, which has not been reported so far, shows a drastic decrease in the ferrimagnetic transition temperature (
). This is plausibly owing to the suppression of magnetic interactions between Fe ions, based on our previous results of other substituted systems such as
FeCoO
. Dielectric constants near room temperature were comparable to those of
Fe
O
. The suppression of dielectric loss in this system is suitable to application. The
-site substitution was also attempted by the large R
ions such as Dy
. The solubility limit was up to about 10% of
ions, as confirmed by XRD and EXAFS measurements.
was raised by 5-10 K for Dy
substitution.
Mizumaki, Masaichiro*; Fujii, Hitoshi*; Yoshii, Kenji; Hayashi, Naoaki*; Saito, Takashi*; Shimakawa, Yuichi*; Uozumi, Takayuki*; Takano, Mikio*
Physica Status Solidi (C), 12(6), p.818 - 821, 2015/06
Times Cited Count:11 Percentile:94.75(Physics, Condensed Matter)We investigated the electronic structure of BaFeO by using HAXPES and XAS measurements and first principle studies. The experimental and theoretical results indicated that BaFeO
is a negative charge transfer compound. We concluded that the on-site Coulomb energy and the strong hybridization between Fe-3d and O-2p orbitals play a very important role of emergence of negative charge transfer. And we found the new structure in the Fe-2p XPS spectrum and concluded this structure is originated from non-local screening.
Kawakubo, Yuki*; Noguchi, Masaya*; Hirata, Tomoaki*; Narumi, Kazumasa; Sakai, Seiji; Yamada, Shinya*; Hamaya, Kohei*; Miyao, Masanobu*; Maeda, Yoshihito
Physica Status Solidi (C), 10(12), p.1828 - 1831, 2013/12
Times Cited Count:0 Percentile:0.00(Nanoscience & Nanotechnology)Noguchi, Masaya*; Hirata, Tomoaki*; Kawakubo, Yuki*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito
Physica Status Solidi (C), 10(12), p.1732 - 1734, 2013/12
Times Cited Count:0 Percentile:0.00(Nanoscience & Nanotechnology)Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi
Physica Status Solidi (C), 10(12), p.1699 - 1703, 2013/12
Times Cited Count:0 Percentile:0.00(Nanoscience & Nanotechnology)Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of -FeSi
films formed on Si substrate was investigated. The substrates were treated with Ne
ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the epitaxial relationship of
-FeSi
(100) // Si (100) were defined. Complicated dependence of these experimental parameters on the film structure indicated that careful optimization of substrate treatment conditions and deposition parameters would enable to obtain
-FeSi
films with excellent crystalline properties.
Sakai, Kenichiro*; Noda, Yuta*; Takeda, Kaoru*; Takeda, Masayasu; Yoshitake, Tsuyoshi*
Physica Status Solidi (C), 10(12), p.1862 - 1865, 2013/12
Times Cited Count:1 Percentile:51.74(Nanoscience & Nanotechnology)Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11
Times Cited Count:4 Percentile:82.39(Physics, Applied)Kubo, Katsunori
Physica Status Solidi (C), 10(3), p.544 - 548, 2013/03
Times Cited Count:5 Percentile:88.47(Materials Science, Multidisciplinary)Uchida, Teppei; Sunaoshi, Takeo*; Kato, Masato
Physica Status Solidi (C), 10(2), p.193 - 196, 2013/02
Times Cited Count:6 Percentile:90.94(Materials Science, Multidisciplinary)Kato, Masato; Uchida, Teppei; Sunaoshi, Takeo*
Physica Status Solidi (C), 10(2), p.189 - 192, 2013/02
Times Cited Count:6 Percentile:90.94(Materials Science, Multidisciplinary)Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji
Physica Status Solidi (C), 9(10-11), p.1888 - 1891, 2012/10
Times Cited Count:3 Percentile:81.45(Materials Science, Multidisciplinary)We have systematically investigated photoluminescence (PL) properties of -phase nanocrystals which are formed by a phase transition from metastable
-FeSi
with a Fluorite structure to
-FeSi
, and succeeded in enhancement of the PL intensity in the optimum conditions of double annealing process. For the PL enhancement, the time of postannealing at 800
C is dominated by the time of the preannealing at 400 or 500
C which is related to amount of the
-phase. After discussing some possible factors, we speculate that the PL enhancement observed in this study may be attributed mainly to improvement of the interface condition between the nanocrystal and Si, because the crystallographic epitaxial relationship among the phases, Si(111)//
(111)//
(202)/(220) can be maintained during precipitation of the nanocrystal on Si(111).
Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji
Physica Status Solidi (C), 9(10-11), p.1884 - 1887, 2012/10
Times Cited Count:4 Percentile:87.01(Materials Science, Multidisciplinary)We report enhancement of intrinsic photoluminescence (PL) from -FeSi
nanocrystals by doping carbon. In the appropriate dose of C
ion implantation into the average nanocrystal size of 14 nm, the PL intensity was enhanced by 260% and increase of the exciton binding energy of 1.8 meV in comparison with that of the non-doped nanocrystal. Furthermore, we found that there was a clear correlation between the PL enhancement and increase of the exciton binding energy. This important result suggests that carbon atoms doped in the silicide lattice may play as an isoelectronic trap and probably form bound excitons with stable states as predicted theoretically. We found a new mechanism of the PL enhancement for
-FeSi
nanocrystals.
Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.*
Physica Status Solidi (C), 9(6), p.1450 - 1453, 2012/06
Times Cited Count:3 Percentile:72.22(Physics, Applied)no abstracts in English
Konishi, Tomoya*; Nishiwaki, Nagatoshi*; Tojo, Takashi*; Ishikawa, Takuma*; Teraoka, Teruki*; Ueta, Yukiko*; Kihara, Yoshifumi*; Moritoki, Hideji*; Tono, Tatsuo*; Musashi, Mio*; et al.
Physica Status Solidi (C), 8(2), p.405 - 407, 2011/02
Times Cited Count:3 Percentile:73.77(Engineering, Electrical & Electronic)Okada, Hiroshi*; Takemoto, Kazumasa*; Oikawa, Fumitake*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
Physica Status Solidi (C), 6(Suppl.2), p.S631 - S634, 2009/05
Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I-V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity.
Maekawa, Masaki; Yu, R.; Kawasuso, Atsuo
Physica Status Solidi (C), 4(10), p.3680 - 3683, 2007/09
Times Cited Count:0 Percentile:0.00(Physics, Atomic, Molecular & Chemical)no abstracts in English
Kawasuso, Atsuo; Fukaya, Yuki*; Hayashi, Kazuhiko; Hashimoto, Mie; Ichimiya, Ayahiko
Physica Status Solidi (C), 4(10), p.3924 - 3927, 2007/09
Well-focused and highly parallel positron beam is totally reflected at the first surface layer when grazing incidence at a small enough angles. Therefore, the reflection high-energy positron diffraction (RHEPD) is suited to determine the surface structures without any disturbance from the bulk. Using the electro-magnetic lenses we developed a positron beam which has more coherence than before. We found that the RHEPD pattern from the Si-77 surface is considerably different from that of electron diffraction. The difference is reasonably explained as a strong thermal diffuse scattering of positrons. As a further application, we studied the phase transition of Si-Ag ultra-thin film. We found that the surface-sensitive diffraction spots exhibit significant temperature dependences. Based on the dynamical diffraction theory, the temperature dependences are reproduced considering the order-disorder phase transition. This will terminate the long debates in the surface science community. Furthermore, we recently found that the positron-surface interaction is different from the electron-surface interaction, especially in the elastic processes. We present the above recent advances of surface studies using RHEPD.
Hori, Fuminobu*; Fukuzumi, Masafumi*; Kawasuso, Atsuo; Zushi, Yoshihiro*; Chimi, Yasuhiro; Ishikawa, Norito; Iwase, Akihiro*
Physica Status Solidi (C), 4(10), p.3530 - 3533, 2007/09
Times Cited Count:0 Percentile:0.00(Physics, Atomic, Molecular & Chemical)no abstracts in English
Maekawa, Masaki; Yu, R.; Kawasuso, Atsuo
Physica Status Solidi (C), 4(10), p.4016 - 4019, 2007/09
Times Cited Count:4 Percentile:72.60(Physics, Atomic, Molecular & Chemical)no abstracts in English
Chen, Z. Q.*; Maekawa, Masaki; Kawasuso, Atsuo; Naramoto, Hiroshi
Physica Status Solidi (C), 4(10), p.3646 - 3649, 2007/09
Times Cited Count:2 Percentile:56.25(Physics, Atomic, Molecular & Chemical)We implanted B, O
, Al
, and P
ions into ZnO (Dose: 4E+15/cm
). The thermal recovery of implantation-induced defects were studied using a slow positron beam. S parameters show much increase after ion implantation, indication introduction of vacancy defects. The thermal recovery of these vacancies induced by different ions shows much difference. For O
implantation, vacancy clusters disappear rapidly after annealing up to about 700
C. For the lighter ion B
implantation, however, vacancy clusters grow to a larger size at 500
C. The vacancies begin to recover and disappear after further annealing up to 900
C. For the Al
implantation, the vacancies grow into even a much larger size after annealing at 600
C, and they are annealed out at 900
C. However, for the P
-implanted sample, it was shown that a much weaker agglomeration process of the vacancy clusters compared with Al
implantation. A higher annealing temperature of 1100
C is needed to fully remove these vacancies.