NIEL analysis of radiation degradation parameters derived from quantum efficiency of triple-junction space solar cell

Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi

Proceedings of 33rd IEEE Photovoltaic Specialists Conference (PVSC-33) (CD-ROM), 5 Pages, 2008/00

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells due to proton irradiation is performed with the use of a one-dimensional optical device simulator; PC1D, and the degradation level in each sub-cell is evaluated. By fitting external quantum efficiencies of the 3J solar cells degraded by proton irradiation, the short-circuit currents () and open-circuit voltages () are simulated. The validity of this model is confirmed by comparing the results of both and to the experimental data. The carrier removal rate of base layer () and the damage coefficient of minority carrier diffusion length () in each sub-cell are also estimated. In addition, NIEL (Non-Ionizing Energy Loss) analysis for both radiation degradation parameters and is discussed.