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Journal Articles

Gyro-spintronic material science using vorticity gradient in solids

Nozaki, Yukio*; Sukegawa, Hiroaki*; Watanabe, Shinichi*; Yunoki, Seiji*; Horaguchi, Taisuke*; Nakayama, Hayato*; Yamanoi, Kazuto*; Wen, Z.*; He, C.*; Song, J.*; et al.

Science and Technology of Advanced Materials, 26(1), p.2428153_1 - 2428153_39, 2025/02

https://doi.org/10.1080/14686996.2024.2428153
 Times Cited Count：0 Percentile：0.00(Materials Science, Multidisciplinary)

Journal Articles

First-principles calculations on dislocations in MgO

Kiyohara, Shin*; Tsuru, Tomohito; Kumagai, Yu*

Science and Technology of Advanced Materials, 25(1), p.2393567_1 - 2393567_9, 2024/09

https://doi.org/10.1080/14686996.2024.2393567
 Times Cited Count：1 Percentile：30.18(Materials Science, Multidisciplinary)

While ceramic materials are widely used in our society, their understanding of the plasticity is not fully understood. MgO is one of the prototypical ceramics, extensively investigated experimentally and theoretically. However, there is still controversy over whether edge or screw dislocations glide more easily. In this study, we directly model the atomic structures of the dislocation cores in MgO based on the first-principles calculations and estimate the Peierls stresses. Our results reveal that the screw dislocation on the primary slip system exhibits a smaller Peierls stress than the edge dislocation. The tendency is not consistent with metals, but rather with TiN, suggesting a characteristic inherent to ceramics.

Journal Articles

Direct ${it in-situ}$ temperature measurement for lamp-based heating device

Sumita, Takehiro; Sudo, Ayako; Takano, Masahide; Ikeda, Atsushi

Science and Technology of Advanced Materials; Methods (Internet), 2(1), p.50 - 54, 2022/02

https://doi.org/10.1080/27660400.2022.2035097

Journal Articles

Work hardening behavior of hot-rolled metastable Fe$$_{50}$$Co$$_{25}$$Ni$$_{10}$$Al$$_{5}$$Ti$$_{5}$$Mo$$_{5}$$ medium-entropy alloy; In situ neutron diffraction analysis

Kwon, H.*; Harjo, S.; Kawasaki, Takuro; Gong, W.; Jeong, S. G.*; Kim, E. S.*; Sathiyamoorthi, P.*; Kato, Hidemi*; Kim, H. S.*

Science and Technology of Advanced Materials, 23(1), p.579 - 586, 2022/00

https://doi.org/10.1080/14686996.2022.2122868
 Times Cited Count：12 Percentile：64.20(Materials Science, Multidisciplinary)

Journal Articles

High reactivity of H$$_{2}$$O vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180
 Times Cited Count：6 Percentile：39.26(Materials Science, Multidisciplinary)

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that H$$_{2}$$O vapor has the highest reactivity due to the spin interaction between H$$_{2}$$O and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and Al$$_{x}$$Ga$$_{1-x}$$N formation for p-GaN were observed at the interface of the Al$$_{2}$$O$$_{3}$$ layer deposited by ALD using H$$_{2}$$O vapor. This study suggests that an oxidant gas other than H$$_{2}$$O and O$$_{2}$$ should be used to avoid unintentional oxidation during Al$$_{x}$$Ga$$_{1-x}$$N atomi layer deposition.

Journal Articles

Investigation of microstructure in additive manufactured Inconel 625 by spatially resolved neutron transmission spectroscopy

Tremsin, A. S.*; Gao, Y.*; Dial, L. C.*; Grazzi, F.*; Shinohara, Takenao

Science and Technology of Advanced Materials, 17(1), p.324 - 336, 2016/07

AA2016-0560.pdf:3.26MB

https://doi.org/10.1080/14686996.2016.1190261
 Times Cited Count：21 Percentile：53.75(Materials Science, Multidisciplinary)

Journal Articles

Possible weak magnetism in MB$$_6$$ (M: Ca, Ba) probed by muon spin relaxation and muon level-crossing resonance

Kuroiwa, Sogo*; Takagiwa, Hiroyuki*; Yamazawa, Maki*; Akimitsu, Jun*; Koda, Akihiro*; Kadono, Ryosuke*; Oishi, Kazuki; Higemoto, Wataru; Watanabe, Isao*

Science and Technology of Advanced Materials, 7(1), p.12 - 16, 2006/01

https://doi.org/10.1016/j.stam.2005.11.012
 Times Cited Count：5 Percentile：21.77(Materials Science, Multidisciplinary)

The temperature dependence of muon spin relaxation rate exhibits a significant increase below $$sim$$130 K in CaB$$_6$$ and $$sim$$110 K in BaB$$_6$$, while no sigh of spontaneous muon precession signal under a zero field is observed. Moreover, the electric field gradient at the boron site measured by muon level-crossing resonance exhibits a step like change at $$sim$$110 K in CaB$$_6$$. These results suggest a change in electronic state and the associated emergence of weak random magnetism below 110-130 K in these alkaline earth hexaborides.

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