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Journal Articles

Effects of gamma-ray irradiation on formation of oxide-trapped charges in SiC MOS capacitors

Yoshikawa, Masahito; Ito, Hisayoshi; Oshima, Takeshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), p.741 - 744, 1996/00

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted 3C-SiC epitaxially grown on Si

Ito, Hisayoshi; Aoki, Yasushi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.549 - 552, 1996/00

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and thermal annealing on electrical characteristics of SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00

no abstracts in English

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