STM-induced SiO decomposition on Si(110)

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Asaoka, Hidehito; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka

e-Journal of Surface Science and Nanotechnology (Internet), 16, p.370 - 374, 2018/08

https://doi.org/10.1380/ejssnt.2018.370

Ion desorption from bulk cesium chloride at moderate temperature (500C) under electric field

Baba, Yuji; Shimoyama, Iwao

e-Journal of Surface Science and Nanotechnology (Internet), 16, p.53 - 59, 2018/03

https://doi.org/10.1380/ejssnt.2018.53

Surface ionization for cesium chloride and Cs-adsorbed soil has been investigated. For cesium chloride, neutral cesium was desorbed around 645C which is close to the melting point of cesium. While Cs ion was desorbed from 400C. The ratio of desorbed ions and neutrals (Cs/Cs) has a maximum around 410 C. Temperature dependence of Cs/Cs was analyzed using Saha-Langmuir equation, As a result, it was found that the temperature maximum is due to the changes of the surface work function induced by the phase transition of CsCl.

Precise observation of growth of surface oxide layer for Pd and Cu nanoparticles during oxidative/reductive gases cyclic flow studied by real-time-resolved XAFS spectroscopy

Matsumura, Daiju; Nishihata, Yasuo; Okajima, Yuka*

e-Journal of Surface Science and Nanotechnology (Internet), 14, p.48 - 52, 2016/00

https://doi.org/10.1380/ejssnt.2016.48

Crystal structure and electron density distribution analyses of NdCeO for electrolyte by Rietveld/ maximum entropy method

Taguchi, Tomitsugu; Igawa, Naoki; Birumachi, Atsushi; Asaoka, Hidehito; Miwa, Shuhei; Osaka, Masahiko

e-Journal of Surface Science and Nanotechnology (Internet), 13, p.339 - 342, 2015/06

https://doi.org/10.1380/ejssnt.2015.339

Rare-earth doped ceria exhibits both ionic and electronic conductions, and those ceria with higher ratio of ionic conduction against electronic conduction is used as a solid electrolyte for solid oxide fuel cells. The electron density distributions in crystals are closely related to the electron diffusing pathway which affects the electronic conduction. In this study, we investigated the electron density distribution of doped ceria as a function of the content of NdO-dopant to deduce the ratio of the electronic to ionic conduction. The crystal structure was refined with the space group, -3, which is the same as undoped ceria. Ce and Nd ions randomly occupied the 4 site and O ion the 8 site. The electron conduction pathway was distributed through the 4-8 and 8-8 sites. The relationship between crystal structural change and electron density distribution as a function of the content of NdO dopant will be discussed.

Labeling co-sensitizer dye for XPS quantification in coadsorption dye-sensitized solar cells

Honda, Mitsunori; Yanagida, Masatoshi*; Han, L.*; Miyano, Kenjiro*

e-Journal of Surface Science and Nanotechnology (Internet), 12, p.63 - 67, 2014/02

https://doi.org/10.1380/ejssnt.2014.63

One-dimentional nanotemplate structure of a Si(110) substrate

Yokoyama, Yuta; Asaoka, Hidehito; Sinsarp, A.*; Sasaki, Masahiro*

e-Journal of Surface Science and Nanotechnology (Internet), 10, p.509 - 512, 2012/09

https://doi.org/10.1380/ejssnt.2012.509

The Si(110) surface has a quite unique one-dimensional (1-D) structure with 162 reconstruction. Since the perfectly straight rows extend over micrometers, the 162 structure can be a superior template for 1-D nanostructures. In this study, we tried to control the clustering of Ge atoms on the Si(110) - 162 substrate. When Ge is deposited at 523 K, clustering of Ge atoms is found. The size of the cluster was 12 nm and many of them were located in a step edges. This trend is previously reported by vicinal Si(111) surface. With increasing temperature, the sizes of Ge clusters became larger. These results indicated that the size and alignment of the Ge cluster can be well controlled on the Si(110) - 162 template surface.

Immobilization of alkyl chain molecules on oxide surface using phosphonic acid as an anchor

Narita, Ayumi; Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Hirao, Norie; Yaita, Tsuyoshi

e-Journal of Surface Science and Nanotechnology (Internet), 10, p.367 - 373, 2012/07

https://doi.org/10.1380/ejssnt.2012.367

To apply organic thin films as new devices, it is important to immobilize organic molecules on oxide surfaces. In this study, we investigated the formation of organic self-assembled monolayer on the oxide surface. Decyl phosphonic acid (DPA) molecules were used as the adsorbed molecule on the surface. The DPA film was prepared by immersing the sapphire substrate in DPA ethanol solution. The sample was measured by XPS using synchrotron soft X-ray. For the P 1s XPS spectra of the DPA powder and the DPA film on the sapphire surface, a single peak was observed and the binding energies of the two samples were almost the same. And we measured the sample by the total reflection (TR) XPS, which is highly surface sensitive method. Compared with the normal XPS, the intensity of the C 1s peak in TR-XPS was enhanced. As a result, it was elucidated that the phosphonic acid of the DPA molecule was located at the lower side, while the alkyl chain was located at the upper side on the surface.

Three dimensional atomic image of TlInSe by X-ray fluorescence holography

Mimura, Kojiro*; Hosokawa, Shinya*; Happo, Naohisa*; Hu, W.; Hayashi, Koichi*; Wakita, Kazuki*; Ishii, Hirofumi*; Yoshimura, Masato*; Jeyakanthan, J.*; Mamedov, N.*

e-Journal of Surface Science and Nanotechnology (Internet), 9, p.273 - 276, 2011/07

https://doi.org/10.1380/ejssnt.2011.273

In-situ observation of nitriding processes of evaporated-Ti thin films due to ion implantation in an analytical transmission electron microscope

Kasukabe, Yoshitaka*; Chen, Y.*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

e-Journal of Surface Science and Nanotechnology (Internet), 9, p.191 - 198, 2011/04

https://doi.org/10.1380/ejssnt.2011.191

The purpose of this work is to study changes of the crystallographic and electronic structures of Ti films by heating and by nitriding during N-implantation into Ti films, using in-situ transmission electron microscope equipped with the instrument for electron energy loss spectroscopy, and then to clarify the atomistic nitriding processes of Ti thin films due to the N-implantation with the aid of self-consistent charge discrete variational X molecular orbital calculations. It is clarified that the maximum concentration of N in Ti films during the N-implantation and the change of electronic structures near the fermi level, respectively, depend on the implantation temperature and the ratio of N/Ti in Ti films. Furthermore, taking into account the bonding interaction of Ti sublattices with ligand N atoms, the transformation mechanisms between hcp-Ti and fcc-Ti sublattices due to the implantation of N atoms are discussed.

Phase transition of In/Si(111) surface studied by reflection high-energy positron diffraction

Hashimoto, Mie; Fukaya, Yuki; Kawasuso, Atsuo; Ichimiya, Ayahiko

e-Journal of Surface Science and Nanotechnology (Internet), 7, p.436 - 440, 2009/04

https://doi.org/10.1380/ejssnt.2009.436

no abstracts in English