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Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

https://doi.org/10.7567/JJAP.57.06KA03
 Times Cited Count：8 Percentile：32.09(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Comprehensive study and design of scaled metal/high-$$k$$/Ge gate stacks with ultrathin aluminum oxide interlayers

Asahara, Ryohei*; Hideshima, Iori*; Oka, Hiroshi*; Minoura, Yuya*; Ogawa, Shingo*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 106(23), p.233503_1 - 233503_4, 2015/06

https://doi.org/10.1063/1.4922447
 Times Cited Count：14 Percentile：35.31(Physics, Applied)

Advanced metal/high-$$k$$/Ge gate stacks with a sub-nm equivalent oxide thickness and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation.

Oral presentation

Effect of nitrogen incorporation into Al-based gate insulator in AlGaN/GaN MOS-HEMT

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

no journal, , 

AlGaN/GaN high electron mobility transistor (HEMT) with metal-oxide-semiconductor (MOS) gate structure has gained much attention as next-generation high frequency and high power devices. In this study, an improvement in thermal stability and interface properties of AlGaN/GaN MOS structure by using AlON gate dielectrics has been demonstrated. Synchrotron radiation photoemission spectroscopy (SR-PES) revealed that Ga and Al atoms were diffused from AlGaN into overlying Al$$_{2}$$O$$_{3}$$ layer during annealing at 800 degrees. In contrast, the spectra for AlON sample remain almost unchanged even after the annealing, indicating high thermal stability of AlON/AlGaN structure. Furthermore, the negligible hysteresis in capacitance-voltage characteristics and interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$ were obtained for AlON/AlGaN/GaN MOS capacitors.

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