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Journal Articles

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*

Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12

 Times Cited Count:6 Percentile:59.86

Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.

Journal Articles

Enhancement of electrical activation of aluminum acceptors in 6H-SiC by co-implantation of carbon ions

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Materials Science Forum, 353-356, p.575 - 578, 2001/00

no abstracts in English

Journal Articles

Fabrication of p-type SiC using aluminum/carbon co-implantation

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Dai-11-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu (BEAMS 2000) Hobunshu, p.139 - 142, 2000/11

no abstracts in English

Journal Articles

Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft X-ray emission and absorption spectroscopy

Muramatsu, Yasuji; Takenaka, Hisataka*; Ueno, Yuko*; Gullikson, E. M.*; Perera, R. C. C.*

Applied Physics Letters, 77(17), p.2653 - 2655, 2000/10

 Times Cited Count:12 Percentile:48.06(Physics, Applied)

no abstracts in English

Journal Articles

Maintenance and material aspects of DREAM reactor

Ueda, Shuzo; Nishio, Satoshi; Yamada, Reiji; Seki, Yasushi; Kurihara, Ryoichi; Adachi, Junichi*; Yamazaki, Seiichiro*; Dream Design Team

Fusion Engineering and Design, 48(3-4), p.521 - 526, 2000/09

 Times Cited Count:6 Percentile:53.98

no abstracts in English

Journal Articles

Electrical Properties of carbon/aluminum-implanted 6H-SiC

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.181 - 182, 2000/06

no abstracts in English

Journal Articles

Silicon carbide fiber

Seguchi, Tadao

Keiso Kagaku Kyoukaishi, (9), p.24 - 25, 1998/11

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Y.*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

A Fusion power reactor concept using SiC/SiC composites

Ueda, Shuzo; Nishio, Satoshi; Seki, Yasushi; Kurihara, Ryoichi; Adachi, Junichi*; Yamazaki, Seiichiro*; DREAM-Design-Team

Journal of Nuclear Materials, 258-263, p.1589 - 1593, 1998/00

 Times Cited Count:40 Percentile:5.71

no abstracts in English

Journal Articles

Scandium and gallium implantation doping of silicon carbide

T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi

Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:40.75(Physics, Applied)

no abstracts in English

Journal Articles

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Applied Physics A, 65(3), p.315 - 323, 1997/00

 Times Cited Count:16 Percentile:34.88(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted 3C-SiC epitaxially grown on Si

Ito, Hisayoshi; Aoki, Yasushi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.549 - 552, 1996/00

no abstracts in English

Journal Articles

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; *; Yoshida, Sadafumi*

Journal of Applied Physics, 77(2), p.837 - 842, 1995/01

 Times Cited Count:57 Percentile:8.51(Physics, Applied)

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted $$beta$$-SiC

Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

13th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Nniv., 0, p.75 - 80, 1994/12

no abstracts in English

Journal Articles

Radiation induced defects in 3C-SiC and their annealing behavior

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 58(2), p.125 - 132, 1994/00

no abstracts in English

Journal Articles

Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilation

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; L.Wei*; *; *; Okumura, Hajime*; Yoshida, Sadafumi*

Hyperfine Interactions, 79, p.725 - 729, 1993/00

 Times Cited Count:16 Percentile:29.35(Physics, Atomic, Molecular & Chemical)

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and thermal annealing on characteristics of 3C-SiC MOS structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; *; Yoshida, Sadafumi*

Mater. Res. Soc. Symp. Proc., Vol. 281, p.797 - 802, 1993/00

no abstracts in English

Journal Articles

Electron irradiation effects on CVD-grown 3C-SiC epilayers

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials, p.143 - 148, 1992/00

no abstracts in English

Journal Articles

Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Okumura, Hajime*; Yoshida, Sadafumi*

J. Electron. Mater., 21(7), p.707 - 710, 1992/00

 Times Cited Count:66 Percentile:5.15(Engineering, Electrical & Electronic)

no abstracts in English

28 (Records 1-20 displayed on this page)