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Journal Articles

Impact of irradiation side on neutron-induced single-event upsets in 65-nm Bulk SRAMs

Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Sato, Tatsuhiko; Hashimoto, Masanori*; Watanabe, Yukinobu*

IEEE Transactions on Nuclear Science, 66(7, Part2), p.1374 - 1380, 2019/07

 Times Cited Count:1 Percentile:56.06(Engineering, Electrical & Electronic)

Single event upsets (SEUs) caused by secondary cosmic-ray neutrons have recognized as a serious reliability problem for microelectronic devices. Acceleration tests at neutron facilities are convenient to validate soft error rates (SERs) quickly, but some corrections caused from measurement conditions are required to derive realistic SERs at actual environment or to compare other measured data. In this study, the effect of irradiation side on neutron-induced SEU cross sections was investigated by performing neutron transport simulation using PHITS. SERs for 65-nm bulk CMOS SRAMs are estimated using the sensitive volume model. It was found from simulation that SERs for the sealant side irradiation are 30-50% larger than those for the board side irradiation. This difference comes from the difference of production yield and angular distribution of secondary H and He ions, which are the main cause of SEUs. Thus the direction of neutron irradiation should be reported when the result of acceleration tests are published. This result also indicates that SERs can be reduced by equipping device with sealant side facing downward.

Journal Articles

Negative and positive muon-induced single event upsets in 65-nm UTBB SOI SRAMs

Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Abe, Shinichiro; Hamada, Koji*; Tampo, Motonobu*; et al.

IEEE Transactions on Nuclear Science, 65(8), p.1742 - 1749, 2018/08

 Times Cited Count:4 Percentile:27.98(Engineering, Electrical & Electronic)

Recently, the malfunction of microelectronics caused by secondary cosmic-ray muon is concerned as semiconductor devices become sensitive to radiation. In this study, we have performed muon irradiation testing for 65-nm ultra-thin body and thin buried oxide (UTBB-SOI) SRAMs in the Japan Proton Accelerator Research Complex (J-PARC), in order to investigate dependencies of single event upset (SEU) cross section on incident muon momentum and supply voltage. It was found that the SEU cross section by negative muon are approximately two to four times larger than those by positive muon in the momentum range from 35 MeV/c to 39 MeV/c. The supply voltage dependence of muon-induced SEU cross section was measured with the momentum of 38 MeV/c. SEU cross sections decrease with increasing supply voltage, but the decreasing of SEU cross section by negative muon is gentler than that by positive muon. Experimental data of positive and negative muon irradiation with the momentum of 38 MeV/c were analyzed by PHITS. It was clarified that the negative muon capture causes the difference between the SEU cross section by negative muon and that by positive muon.

Journal Articles

Effect of damage on transient current waveform observed in GaAs schottky diode by single ion hit

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Wakasa, Takeshi; Ito, Hisayoshi

Proceedings of 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.187 - 189, 2004/10

no abstracts in English

Journal Articles

Development of single-ion hit techniques and their applications at TIARA of JAERI Takasaki

Kamiya, Tomihiro; Hirao, Toshio; Kobayashi, Yasuhiko

Nuclear Instruments and Methods in Physics Research B, 219-220, p.1010 - 1014, 2004/06

 Times Cited Count:8 Percentile:47.67(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Topics and future plans of ion beam facilities at JAERI

Yokota, Wataru; Arakawa, Kazuo; Okumura, Susumu; Fukuda, Mitsuhiro; Kamiya, Tomihiro; Nakamura, Yoshiteru

Proceedings of 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.179 - 184, 2000/10

no abstracts in English

Journal Articles

Study of radiation effects on space semiconductor devices

Nashiyama, Isamu; Matsuda, Sumio*

Hoshasen To Sangyo, (79), p.10 - 15, 1998/00

no abstracts in English

Journal Articles

Effects of space radiation on silicon devices

Nashiyama, Isamu

Materiaru Raifu, 9(2), p.69 - 72, 1997/04

no abstracts in English

Journal Articles

Sub-micron microbeam apparatus for high resolution materials analyses

Kamiya, Tomihiro; Suda, Tamotsu*; Tanaka, Ryuichi

Nuclear Instruments and Methods in Physics Research B, 118(1-4), p.447 - 450, 1996/09

 Times Cited Count:31 Percentile:8.16(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Journal Articles

Beam positioning and single ion hit system in the high energy heavy ion microbeam apparatus

Kamiya, Tomihiro; ; Suda, Tamotsu*; *

BEAMS 1995: Dai-6-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu, 0, p.127 - 130, 1995/00

no abstracts in English

Journal Articles

The JAERI high energy, heavy ion microprobe system and single hit technique

Tanaka, Ryuichi; Kamiya, Tomihiro

Nuclear Instruments and Methods in Physics Research B, 79(1), p.432 - 435, 1993/07

 Times Cited Count:6 Percentile:41.47(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Control of JAERI heavy ion microbeam system and beam measurement

Kamiya, Tomihiro; Yuto, Hidenori; Tanaka, Ryuichi

Dai-5-Kai Tandemu Kasokuki Oyobi Sono Shuhen Gijutsu No Kenkyukai Hokokushu, p.116 - 119, 1992/07

no abstracts in English

Journal Articles

Single ion hit system in heavy ion microbeam apparatus

Kamiya, Tomihiro; *; Tanaka, Ryuichi

Dai-3-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu, p.453 - 456, 1992/00

no abstracts in English

Journal Articles

Microbeam system for study of single event upset of semiconductor devices

Kamiya, Tomihiro; *; Minehara, Eisuke; Tanaka, Ryuichi; Odomari, Iwao*

Nuclear Instruments and Methods in Physics Research B, 64, p.362 - 366, 1992/00

 Times Cited Count:28 Percentile:9.11(Instruments & Instrumentation)

no abstracts in English

Journal Articles

JAERI heavy ion microbeam system and single ion hit technique

Kamiya, Tomihiro; *; Tanaka, Ryuichi

Proc. of the lst Meeting on the Ion Engineering Society of Japan, p.105 - 110, 1992/00

no abstracts in English

Journal Articles

JAERI heavy ion microbeam system and single ion hit technique

Kamiya, Tomihiro; *; Tanaka, Ryuichi

Proceedings of the International Workshop on Radiation Effects of Semiconductor Devices for Space Application, p.112 - 117, 1992/00

no abstracts in English

Journal Articles

Development of single-ion-hit technology

Utsunomiya, Nobuhiro; Kamiya, Tomihiro; Tanaka, Ryuichi; Minehara, Eisuke

Dai-3-Kai Tandemu Kasokuki Oyobi Sono Shuhen Gijutsu No Kenkyukai Hokokushu, p.86 - 89, 1990/07

no abstracts in English

Oral presentation

Ion-beam irradiation of plants and semiconductors and characteristics of a dedicated accelerator

Yokota, Wataru; Ono, Yutaka; Makino, Takahiro

no journal, , 

no abstracts in English

18 (Records 1-18 displayed on this page)
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