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Journal Articles

Gamma irradiation effects of image sensor for radiation-resistant camera

Takeuchi, Tomoaki; Otsuka, Noriaki; Tsuchiya, Kunihiko; Tanaka, Shigeo*; Ozawa, Osamu*; Komanome, Hirohisa*; Watanabe, Takashi*; Ueno, Shunji*

Nippon Hozen Gakkai Dai-13-Kai Gakujutsu Koenkai Yoshishu, p.391 - 394, 2016/07

no abstracts in English

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

Challenge of the development of high performance SiC semiconductor devices

Oshima, Takeshi

Hoshasen To Sangyo, (105), p.12 - 18, 2005/03

no abstracts in English

Journal Articles

Change in the electrical characteristics of p-channel 6H-SiC MOSFETs by $$gamma$$-ray irradiation

Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10

no abstracts in English

Journal Articles

Improved model for single-event burnout mechanism

Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.165 - 168, 2004/10

no abstracts in English

Journal Articles

Research of single-event burnout in bipolar transistors

Hirao, Toshio; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Nagai, Yuki*; Ohira, Hideharu*; Ito, Hisayoshi; Matsuda, Sumio*

JNC TN7200 2001-001, p.66 - 68, 2002/01

no abstracts in English

Journal Articles

Impurity doping into SiC semiconductor by means of ion implantation

Ito, Hisayoshi; Oshima, Takeshi

Hyomen Kagaku, 21(12), p.778 - 783, 2000/12

no abstracts in English

Journal Articles

Mechanism for single-event burnout of bipolar transistors

Kuboyama, Satoshi*; Suzuki, Takahiro*; Hirao, Toshio; Matsuda, Sumio*

IEEE Transactions on Nuclear Science, 47(6), p.2634 - 2639, 2000/12

 Times Cited Count:6 Percentile:55.6(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Development of 10GHz MINI-ECR and design of 12GHz MINI-ECR II

Saito, Yuichi; Yokota, Wataru; Okoshi, Kiyonori

KEK Proceedings 99-22, p.1 - 16, 2000/01

no abstracts in English

Journal Articles

Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

Materials Science Forum, 338-342, p.1299 - 1302, 2000/00

no abstracts in English

JAEA Reports

Power supply system for JAERI AVF cyclotron

Nakamura, Yoshiteru; Yokota, Wataru; Okumura, Susumu; Fukuda, Mitsuhiro; Nara, Takayuki; Agematsu, Takashi; Ishibori, Ikuo; Arakawa, Kazuo; Hoshika, Keizo*; *

JAERI-M 94-054, 61 Pages, 1994/03

JAERI-M-94-054.pdf:2.75MB

no abstracts in English

JAEA Reports

Irradiation effect of transistor by Co-60 gamma ray and electron beam; Effects of dose rate and exposure temperatures

Hirao, Toshio; Yoshikawa, Masahito; Morita, Yosuke; *; *

JAERI-M 89-207, 128 Pages, 1989/12

JAERI-M-89-207.pdf:2.62MB

no abstracts in English

Journal Articles

Effect of irradiation temperature on the change of characteristics of bipolar transistor.

; Hayakawa, Naohiro; Kawakami, Waichiro

EIM-86-137, p.77 - 85, 1986/00

no abstracts in English

Journal Articles

Transistorization in reactor instrumentation

Nippon Genshiryoku Gakkai-Shi, 6(8), P. 471, 1964/00

no abstracts in English

Oral presentation

Recovery of the degraded characteristics of SiC MOSFETs irradiated with $$gamma$$-rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Electrical properties of SiC MOSFETs irradiated with $$gamma$$-rays at elevated temperature

Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with $$gamma$$-rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.

Oral presentation

Influence of $$gamma$$-ray irradiation under high temperature and humidity circumstance on the electrical characteristics of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Oral presentation

Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to $$gamma$$-ray irradiation

Takeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Effect of $$gamma$$-ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.

Oral presentation

Optimum structures for $$gamma$$-ray radiation resistant SiC-MOSFETs

Takeyama, Akinori; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; et al.

no journal, , 

Oxide thickness dependence of $$gamma$$-ray irradiation response on Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. As a result of irradiation, the threshold voltage V$$_{th}$$ for both SiC MOSFETs with gate oxide of 30 nm or 60 nm thick shifted to negative voltage-side gently. However, the V$$_{th}$$ for 60 nm thick more immediately decreased over 400 kGy. It is found that SiCMOSFETs with smaller thickness has a higher radiation tolerance.

Oral presentation

Influence of gate bias on $$gamma$$-ray radiation response of SiC MOSFETs

Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V$$_{th}$$ due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.

21 (Records 1-20 displayed on this page)