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Kakuta, Tsunemi; Ara, Katsuyuki; Shamoto, N.*; ;
DEI-91-124, p.27 - 34, 1991/12
no abstracts in English
Kakuta, Tsunemi; Ara, Katsuyuki; ; ; ; Shamoto, N.*
EIM-89-133, p.29 - 36, 1989/12
no abstracts in English
; ; ; ; ; ; ;
EIM-87-1, p.1 - 9, 1987/00
no abstracts in English
Sekihata, Yuki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Taga, Ryo*; Ishizuka, Shinji*; Takakuwa, Yuji*
no journal, ,
In this study, we investigated the oxidation reaction kinetics on p- and n-type Si surfaces using real-time ultraviolet photoelectron spectroscopy. In the room temperature oxidation, it is found that oxidation reaction coefficient on n-Si(001) is larger than that on p-Si(001). The work function of the n-Si(001) surface shows negative value but p-Si(001) is positive value. From this result, we can estimate the adsorption positions of O atoms. O atoms have a negative charge in the bond of Si-O, so it can be assumed that oxygen is placed on the n-Si(001) surfaces, but it is subsurface in case of the p-Si(001) surface. In case of n-Si(001) substrates, the doped electrons spill out into the surface because many electrons exist in the substrate. As the result, oxidation reaction is promoted in the n-Si(001) surface. From these results, we found that there is a difference of oxidation kinetics depending on the conductivity.