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Journal Articles

Defect layer in SiO$$_2$$-SiC interface proved by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physica B; Condensed Matter, 376-377, p.354 - 357, 2006/04

 Times Cited Count:2 Percentile:86.49(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Structure of SiO$$_2$$/4H-SiC interface probed by positron annihilation spectroscopy

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physical Review B, 73(1), p.014111_1 - 014111_9, 2006/01

 Times Cited Count:19 Percentile:34.56(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Oxygen potential measurements of fluorite-type Zr$$_{0.5}$$Pu$$_{0.5}$$O$$_{2-y}$$ by EMF method

Otobe, Haruyoshi; Nakamura, Akio; Yamashita, Toshiyuki; Minato, Kazuo

Journal of Nuclear Materials, 344(1-3), p.219 - 222, 2005/09

 Times Cited Count:3 Percentile:73.82(Materials Science, Multidisciplinary)

Actinides-bearing zirconias are prominent candidate materials for various nuclear applications: targets for actinide transmutation, inert material fuels, radioactive waste forms, etc. In this study, the oxygen potential (g(O$$_{2}$$)) behavior of fluorite-type (F-type) Zr$$_{0.5}$$Pu$$_{0.5}$$O$$_{2-y}$$ has been measured by EMF method using the zirconia oxygen sensor. It was found that the g(O$$_{2}$$) values of F-type Zr$$_{0.5}$$Pu$$_{0.5}$$O$$_{2-y}$$ were about 150 kJ/mol higher than those of F-type PuO$$_{2-y}$$ at the same oxygen-nonstoichiometric (O/M) values. The g(O$$_{2}$$) values of F-type Zr$$_{0.5}$$Pu$$_{0.5}$$O$$_{2-y}$$ were 50 kJ/mol lower than those of pyrochlore Zr$$_{2}$$Pu$$_{2}$$O$$_{7+x}$$ at the same O/M values. These results suggest that the g(O$$_{2}$$) behavior depends on the cation and anion ordering/disordering, in addition to the cation composition ratio (Zr/Pu).

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4$$H$$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De$'a$k, P.*; Son, N. T.*; Janz$'e$n, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

 Times Cited Count:40 Percentile:16.59(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Electrical conductivity and defect structure of lanthanum-doped (U,Pu)O$$_{2pm x}$$

Tsuji, Toshihide*; *; Yamashita, Toshiyuki; Fujino, Takeo*

Journal of Alloys and Compounds, 213-214, p.378 - 380, 1994/00

 Times Cited Count:1 Percentile:74.88(Chemistry, Physical)

no abstracts in English

Journal Articles

A Defect-thermodynamic approach to PuO$$_{2-x}$$ and CeO$$_{2-x}$$

Nakamura, Akio

Journal of Nuclear Materials, 201, p.17 - 26, 1993/00

 Times Cited Count:18 Percentile:16(Materials Science, Multidisciplinary)

no abstracts in English

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