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Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

 Times Cited Count:3 Percentile:73.71(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum

Oi, Akihiko; Oshima, Takeshi; Yoshikawa, Masahito; Lee, K. K.; Iwami, Motohiro*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.831 - 834, 2002/05

no abstracts in English

Journal Articles

Fabrication of p-type SiC using aluminum/carbon co-implantation

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Dai-11-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu (BEAMS 2000) Hobunshu, p.139 - 142, 2000/11

no abstracts in English

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