Refine your search:     
Report No.
 - 
Search Results: Records 1-11 displayed on this page of 11
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Non-destructive depth analysis of the surface oxide layer on Mg$$_{2}$$Si with XPS and XAS

Esaka, Fumitaka; Nojima, Takehiro; Udono, Haruhiko*; Magara, Masaaki; Yamamoto, Hiroyuki

Surface and Interface Analysis, 48(7), p.432 - 435, 2016/07

 Times Cited Count:3 Percentile:87.88(Chemistry, Physical)

XPS is widely used for non-destructive chemical state analysis of solid materials. In this method, depth profiling can be carried out by a combination with ion beam sputtering. However, the sputtering often causes segregation and preferential sputtering of atoms and gives inaccurate information. The use of energy-tunable X-rays from synchrotron radiation (SR) enables us to perform non-destructive depth profiling in XPS. Here, the analytical depth can be changed by changing excitation X-ray energy. In the present study, we examined methods to perform depth profiling with XPS by changing excitation energy and XAS by changing electron energy for detection. These methods were then applied to the analysis of native surface oxide layers on Mg$$_{2}$$Si crystals. In this XAS analysis, the peak at 1843.4 eV becomes dominant when the electron energy for detection increases, which implies that Si-O or Si-O-Mg structure is formed as the surface oxide layer on the Mg$$_{2}$$Si.

Journal Articles

Study of oxide film with the hard X-ray photoelectron spectroscopy

Kobata, Masaaki; Kobayashi, Keisuke*

Journal of the Vacuum Society of Japan, 58(2), p.43 - 49, 2015/02

We report the applications of a hard X-ray photoelectron spectroscopy to the characterization of SiO$$_{2}$$/Si(001)systems. Large escape depth of high-energy photoelectron enables us to probe buried layers and their interfaces in multilayer structures. Estimation of SiO$$_{2}$$ overlayer thicknesses up to 25 nm by angle resolved XPS was possible in SiO$$_{2}$$/Si(001) samples. Determination of the thickness profile of a wedged shape SiO$$_{2}$$ buried layer was successfully done in Ir (8 nm)/HfO$$_{2}$$ (2.2 nm)/thickness graded-SiO$$_{2}$$ (0-10 nm) / Si (100). The Si 1s core level showed a SiO$$_{2}$$ thickness dependent shift, which was ascribed to fixed charge at the SiO$$_{2}$$-Si interface. Energy distribution of interface states at ultrathin thermal oxide/Si(100) interfaces were determined by Si 1${it s}$ core level shift by applying gate bias in metal-oxide-semiconductor (MOS) structure with 5 nm Au gate electrodes.

Journal Articles

Fabrication of $$beta$$-FeSi$$_{2}$$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03

no abstracts in English

Journal Articles

Formation process of $$beta$$-FeSi$$_{2}$$ on Si(111) substrate studied by means of SR-XPS

Saito, Takeru; Yamamoto, Hiroyuki; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Photon Factory Activity Report 2001, (19), P. 205, 2001/00

no abstracts in English

Journal Articles

Non-destructive depth profile analysis by high-energy synchrotron-radiation XPS

Yamamoto, Hiroyuki; Baba, Yuji

Journal of the Korean Vacuum Society, 9(S2), p.84 - 88, 2000/11

no abstracts in English

Journal Articles

Non-destructive depth profile analysis of SiO$$_{2}$$/Si layer by high-energy XPS

Yamamoto, Hiroyuki; Baba, Yuji

Journal of Surface Analysis, 7(1), p.122 - 127, 2000/03

no abstracts in English

Journal Articles

Application of high-energy X-ray photoelectron spectroscopy using synchrotron-radiation to the depth profile analysis of ion implanted layer on Si(100) surface

Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, Teikichi

Photon Factory Activity Report, (13), P. 352, 1995/00

no abstracts in English

Journal Articles

Excimer laser irradiation effects on ethylene-tetrafluoroethylene copolymer

*; Kawanishi, Shunichi; Nishii, Masanobu; Shimizu, Yuichi; Sugimoto, Shunichi; *; *

J. Photopolym. Sci. Technol., 6(3), p.385 - 392, 1993/00

no abstracts in English

Oral presentation

Evaluation of Ag diffusion coefficient and control of diffusion depth in Mg$$_{2}$$Si pn-junction diode

Hori, Nobuhiko*; Esaka, Fumitaka; Udono, Haruhiko*

no journal, , 

Magnesium half silicide is a semiconductor with an indirect energy gap of about 0.6 eV at room temperature. This material is attracting attention as a suitable material for Si-based infrared photo detector. In this study, Ag diffusion coefficient was evaluated for the Ag diffused Mg$$_{2}$$Si substrate using a conventional sputter etching. In addition, the sensitivity of the diode was improved by controlling the Ag diffusion depth. As the result, the sensitivity of the diode with the diffusion depth of 20 $$mu$$m was four times higher than that with the diffusion depth of 80 $$mu$$m.

Oral presentation

Study of adsorption and diffusion of cesium atoms in C$$_{60}$$ solid by depth analysis with photo-electron spectroscopy

Sekiguchi, Tetsuhiro; Yokoyama, Keiichi; Yano, Masahiro; Asaoka, Hidehito; Suzuki, Shinichi*; Yaita, Tsuyoshi

no journal, , 

In the recovery process for the laser isotope separation of cesium Cs-135, we need occlusion material that takes the photo-generated atomic Cs selectively, but does not take CsI molecules. In the present study, fullerene C$$_{60} $$ was selected as an occlusion material. Concentration depth distribution of Cs in the solid was evaluated using X-ray photo-electron spectroscopy (XPS). The dependence of the X-ray excitation energy for Cs$$^{-}$$ or CsI$$^{-}$$ dosed C$$_{60}$$ samples were measured. Difference in excitation energy dependence were observed between Cs and CsI. In Cs, the results were explained by the distribution that penetrated deeply into the solid. On the other hand, it was concluded that CsI did not penetrate into the solid.

11 (Records 1-11 displayed on this page)
  • 1