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Journal Articles

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 Times Cited Count:9 Percentile:46.7(Physics, Applied)

Journal Articles

Synthesis of heterostructured SiC and C-SiC nanotubes by ion irradiation-induced changes in crystallinity

Taguchi, Tomitsugu; Yamamoto, Shunya; Kodama, Katsuaki; Asaoka, Hidehito

Carbon, 95, p.279 - 285, 2015/12

 Times Cited Count:8 Percentile:64.26(Chemistry, Physical)

Amorphous SiC nanotubes are successfully synthesized by 340 keV Si$$^{+}$$ ions irradiation of polycrystalline SiC nanotubes for the first time. A polycrystalline/amorphous heterostructure SiC nanotube, in which polycrystalline SiC and amorphous SiC coexist in the same nanotube, is also synthesized by ions irradiation with a mask in front of polycrystalline SiC nanotube. According to electron energy loss spectroscopy evaluation, the plasmon energies of SiC nanotube change rapidly at the interface between polycrystalline and amorphous regions. The volume swelling by amorphization evaluated from the differences of plasmon energies is approximately 5.0%. This result reveals that the further relaxed amorphous SiC nanotubes with higher density can be produced. The graphitic shells in carbon layer of C-SiC nanotube gradually bend to the radial direction of nanotube by the ion irradiation. Since the graphite (002) spots in the selected area electron diffraction pattern are clearly observed even after the ion irradiation, the carbon layer in C-SiC nanotube has certain crystallinity. Moreover, the new multi-walled carbon nanotube with the graphitic shells completely parallel to the radial direction of nanotube is also produced inside the amorphous SiC tubular layer in the case of C-SiC nanotube with large caliber.

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 Times Cited Count:5 Percentile:70.33(Physics, Applied)

Journal Articles

Single-photon emitting diode in silicon carbide

Lohrmann, A.*; Iwamoto, Naoya*; Bodrog, Z.*; Castelletto, S.*; Oshima, Takeshi; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*

Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07

 Times Cited Count:97 Percentile:3.27(Multidisciplinary Sciences)

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:6 Percentile:42.14(Instruments & Instrumentation)

Journal Articles

Identification of divacancies in 4H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04

 Times Cited Count:3 Percentile:80.94(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

 Times Cited Count:8 Percentile:59.35(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

 Times Cited Count:3 Percentile:74.28(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

 Times Cited Count:13 Percentile:42.18(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Charge induced in 6H-SiC pn diodes by irradiation of oxygen ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi

Materials Science Forum, 527-529, p.1347 - 1350, 2006/00

Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.

Journal Articles

Shallow P donors in 3${it C}$-, 4${it H}$-, and 6${it H}$-SiC

Isoya, Junichi*; Katagiri, Masayuki*; Umeda, Takahide*; Son, N. T.*; Henry, A.*; Gali, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janz$'e$n, E.*

Materials Science Forum, 527-529, p.593 - 596, 2006/00

no abstracts in English

Journal Articles

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Materials Science Forum, 527-529, p.527 - 530, 2006/00

no abstracts in English

Journal Articles

Characterization of charge generated in silicon carbide n$$^{+}$$p diodes using transient ion beam-induced current

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04

 Times Cited Count:9 Percentile:42.04(Instruments & Instrumentation)

In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.

Journal Articles

Challenge of the development of high performance SiC semiconductor devices

Oshima, Takeshi

Hoshasen To Sangyo, (105), p.12 - 18, 2005/03

no abstracts in English

Journal Articles

Effect of thick SiC interphase layers on microstructure, mechanical and thermal properties of reaction-bonded SiC/SiC composites

Taguchi, Tomitsugu; Igawa, Naoki; Yamada, Reiji; Jitsukawa, Shiro

Journal of Physics and Chemistry of Solids, 66(2-4), p.576 - 580, 2005/02

 Times Cited Count:46 Percentile:16.63(Chemistry, Multidisciplinary)

SiC/SiC composites are expected to be one of the candidate materials for fusion reactors because of the low radioactivity after neutron irradiation and excellent mechanical properties at high temperature. Reaction-Bonding (RB) process was employed since this process has a possibility of producing a much denser matrix compared with other processes. SiC fibers, however, adhere strongly to the matrix because of high reactiveness of molten Si with the SiC fiber during RB process. In this study, we investigated the effects of SiC layer as an interphase on fracture behavior in the SiC/SiC. The specimen without an interphase layer showed catastrophic failure behavior while the specimen with SiC interphase layer exhibited non-catastrophic failure behavior by 3-point bending testing. The microstructure observation indicated that SiC fibers did not adhere to the matrix in the specimen with SiC interpahse layer. After 3-point bending testing, the pull-out phenomenon occurred in the SiC/SiC with SiC interphase layer while did not occur in the composite without interphase layer.

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4$$H$$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De$'a$k, P.*; Son, N. T.*; Janz$'e$n, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

 Times Cited Count:40 Percentile:16.59(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Negative-U-centers in 4H- and 6H-SiC detected by spectral light excitation

Weidner, M.*; Pensl, G.*; Nagasawa, Hiroyuki*; Sch$"o$ner, A.*; Oshima, Takeshi

Materials Science Forum, 457-460, p.485 - 488, 2004/10

no abstracts in English

Journal Articles

Change in the electrical characteristics of p-channel 6H-SiC MOSFETs by $$gamma$$-ray irradiation

Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10

no abstracts in English

Journal Articles

Silicon carbide ceramic micro-tubes synthesized using irradiation effects of electron beams

Yoshikawa, Masahito; Sugimoto, Masaki

Kombatekku, 32(8), p.56 - 60, 2004/08

no abstracts in English

72 (Records 1-20 displayed on this page)