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Journal Articles

High flux pinning efficiency by columnar defects dispersed in three directions in YBCO thin films

Sueyoshi, Tetsuro*; Nishimura, Takahiro*; Fujiyoshi, Takanori*; Mitsugi, Fumiaki*; Ikegami, Tomoaki*; Ishikawa, Norito

Superconductor Science and Technology, 29(10), p.105006_1 - 105006_7, 2016/10

 Times Cited Count:6 Percentile:60.05(Physics, Applied)

A systematic investigation of flux pinning by widely direction-dispersed columnar defects (CDs) in YBa$$_{2}$$Cu$$_{3}$$Oy thin films was carried out by using heavy-ion irradiation: a parallel configuration of CDs aligned along the $$c$$-axis, and two trimodal splay configurations composed of crossing CDs; relative to the $$c$$-axis, where the splay plane defined by the three irradiation angles is perpendicular (trimodal-A) or parallel (trimodal-B) to the transport current direction. The trimodal configurations show high pinning efficiency over a wide range of magnetic field orientations compared to the parallel one at low magnetic field. In particular, trimodal-B shows the higher critical current density of the two trimodal configurations.

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:6 Percentile:42.14(Instruments & Instrumentation)

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

 Times Cited Count:8 Percentile:59.35(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00

no abstracts in English

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4$$H$$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De$'a$k, P.*; Son, N. T.*; Janz$'e$n, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

 Times Cited Count:40 Percentile:16.59(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08

 Times Cited Count:50 Percentile:14.23(Physics, Applied)

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.

Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

JAEA Reports

None

*; *; *; *; Hasegawa, Makoto;

JNC-TY9400 2000-007, 50 Pages, 2000/03

JNC-TY9400-2000-007.pdf:1.29MB

no abstracts in English

Journal Articles

Tritium inventory estimation in solid blanket system

Nishikawa, Masabumi*; Baba, Atsushi*; *; Kawamura, Yoshinori

Fusion Engineering and Design, 39-40, p.615 - 625, 1998/00

 Times Cited Count:14 Percentile:25.24(Nuclear Science & Technology)

no abstracts in English

Journal Articles

ESR studies of defects in P-type 6H-SiC irradiated with 3MeV-electrons

D.Cha*; Ito, Hisayoshi; Morishita, Norio; Kawasuso, Atsuo; Oshima, Takeshi; ; J.Ko*; K.Lee*; Nashiyama, Isamu

Mater. Sci. Forum, 264-268, p.615 - 618, 1998/00

no abstracts in English

Journal Articles

Depth profiles of defects in Ar-ion-irradiated steels determined by a least-squares fit of S parameters from variable-energy positron annihilation

; *; *; Ito, Yasuo*

Applied Surface Science, 85(2), p.229 - 238, 1995/01

 Times Cited Count:11 Percentile:41.22(Chemistry, Physical)

no abstracts in English

Journal Articles

Enhancement of the transport critical current density by electron irradiation in a Bi$$_{1.5}$$Pb$$_{0.5}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{x}$$ ceramic

Shiraishi, Kensuke; *; *; *

Japanese Journal of Applied Physics, 31(12A), p.L1675 - L1678, 1992/12

 Times Cited Count:0 Percentile:100(Physics, Applied)

no abstracts in English

Journal Articles

Depth profiles of defects in C-ion-irradiated steel determined by a least-squares fit of S parameters from variable-energy positron annihilation

; Takamura, Saburo; *; *

Physical Review B, 46(22), p.14411 - 14418, 1992/12

 Times Cited Count:6 Percentile:59.94(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Electron irradiation effects on the transport critical current density in a Bi$$_{1.5}$$Pb$$_{0.5}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{x}$$ ceramic

*; *; *; *

Japanese Journal of Applied Physics, 31(8A), p.L1037 - L1040, 1992/08

 Times Cited Count:5 Percentile:66.59(Physics, Applied)

no abstracts in English

Journal Articles

Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Okumura, Hajime*; Yoshida, Sadafumi*

J. Electron. Mater., 21(7), p.707 - 710, 1992/00

 Times Cited Count:66 Percentile:5.31(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Electron-irradiation enhancement of the critical magnetization current in the Bi$$_{1.4}$$Pb$$_{0.6}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{10}$$ superconductor

Shiraishi, Kensuke; ; *

Japanese Journal of Applied Physics, 30(4A), p.L578 - L581, 1991/04

 Times Cited Count:6 Percentile:60.6(Physics, Applied)

no abstracts in English

Journal Articles

Microstructure in electron irradiated Ba$$_{2}$$YCu$$_{3}$$O$$_{7}$$ superconducters

Shiraishi, Kensuke;

High Temperature Superconductors, p.325 - 332, 1991/00

no abstracts in English

Journal Articles

Damage profiles in a stainless steel irradiated with Ar and N ions

Shiraishi, Kensuke; Fukai, Katsumaro; *

Journal of Nuclear Materials, 179-181, p.550 - 553, 1991/00

 Times Cited Count:5 Percentile:44.86(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Electrical conductivity of Li$$_{2}$$O under and after irradiation

Noda, Kenji; Ishii, Yoshinobu; *; Ono, Hideo; Watanabe, H.

Journal of Nuclear Materials, 179-181, p.835 - 838, 1991/00

 Times Cited Count:19 Percentile:12.61(Materials Science, Multidisciplinary)

no abstracts in English

31 (Records 1-20 displayed on this page)