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Journal Articles

Journal Articles

Development of lanthanide and actinide studies toward interface chemistry using vibrational sum frequency generation spectroscopy

Kusaka, Ryoji

Hosha Kagaku, (41), p.31 - 33, 2020/03

This commentary article introduced researches involved in encouragement award 2019 of the Japan Society of Nuclear and Radiochemical Sciences. Vibrational sum frequency generation (VSFG) spectroscopy and interfacial studies of solvent extraction of lanthanides and actinides using VSFG spectroscopy were described.

Journal Articles

Mechanism of phase transfer of uranyl ions; A Vibrational sum frequency generation spectroscopy study on solvent extraction in nuclear reprocessing

Kusaka, Ryoji; Watanabe, Masayuki

Physical Chemistry Chemical Physics, 20(47), p.29588 - 29590, 2018/12

 Times Cited Count:6 Percentile:46.87(Chemistry, Physical)

Mechanistic understanding of solvent extraction of uranyl ions (UO$$_{2}$$$$^{2+}$$) by tributyl phosphate (TBP) will help improve the technology for the treatment and disposal of spent nuclear fuels. So far, it has been believed that uranyl ions in the aqueous phase are adsorbed to a TBP-enriched organic/aqueous interface, form complexes with TBP at the interface, and are extracted into the organic phase. Here we show that uranyl-TBP complex formation does not take place at the interface using vibrational sum frequency generation (VSFG) spectroscopy and propose an alternative extraction mechanism that uranyl nitrate, UO$$_{2}$$(NO$$_{3}$$)$$_{2}$$, passes through the interface and forms the uranyl-TBP complex, UO$$_{2}$$(NO$$_{3}$$)$$_{2}$$(TBP)$$_{2}$$, in the organic phase.

Journal Articles

Application of combination between time-resolved synchrotron radiation photoelectron spectroscopy and supersonic oxygen molecular beams to surface reaction dynamics study

Yoshigoe, Akitaka

X-sen Kodenshi Bunkoho, p.271 - 282, 2018/12

Based on the series of author's studies, the author explains the time-resolved synchrotron radiation X-ray photoelectron spectroscopy and supersonic oxygen molecular beam study on the adsorption reaction dynamics of oxygen molecules at the Si single crystal surface in the section 5.10 of the new textbook "X-ray Photoelectron Spectroscopy" (Kodan-sha) edited by Yuji Takakuwa.

Journal Articles

Development of numerical simulation method for capturing behavior of aerosol particles on gas-liquid interface based on interface tracking method

Yoshida, Hiroyuki; Uesawa, Shinichiro; Horiguchi, Naoki; Miyahara, Naoya; Ose, Yasuo*

Dai-23-Kai Doryoku, Enerugi Gijutsu Shimpojiumu Koen Rombunshu (USB Flash Drive), 5 Pages, 2018/06

no abstracts in English

Journal Articles

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

 Times Cited Count:3 Percentile:70.39(Physics, Applied)

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400$$^{circ}$$C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800$$^{circ}$$C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850$$^{circ}$$C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800$$^{circ}$$C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400$$^{circ}$$C leads to further improvement of interface properties and reduction of C-V hysteresis.

Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:9 Percentile:33.81(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 Times Cited Count:9 Percentile:33.81(Physics, Applied)

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O$$_{3}$$ oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Journal Articles

Observation of aerosol behavior near droplet interface

Uesawa, Shinichiro; Yoshida, Hiroyuki

Konsoryu, 32(1), p.140 - 149, 2018/03

no abstracts in English

Journal Articles

Control of Ga-oxide interlayer growth and Ga diffusion in SiO$$_{2}$$/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

 Times Cited Count:19 Percentile:14.34(Physics, Applied)

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO$$_{2}$$ films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO$$_{2}$$/GaO$$_{x}$$/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10$$^{10}$$cm$$^{-2}$$eV$$^{-1}$$ were obtained by post-deposition annealing, Ga diffusion into overlying SiO$$_{2}$$ layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Journal Articles

The Structure of a lanthanide complex at an extractant/water interface studied using heterodyne-detected vibrational sum frequency generation

Kusaka, Ryoji; Watanabe, Masayuki

Physical Chemistry Chemical Physics, 20(4), p.2809 - 2813, 2018/01

 Times Cited Count:6 Percentile:46.87(Chemistry, Physical)

Solvent extraction plays an integral part in the separation and purification of metals. Because extractants generally used as complexing agents for metal extractions, such as di-(2-ethylhexyl)phosphoric acid (HDEHP) for lanthanide extractions, are amphiphilic, they come to the organic/water interface, and the interface plays a crucial role as the site of the formation of metal complexes and subsequent transfer reaction to an organic phase. Despite the importance of the interface for solvent extractions, however, molecular-level structure of the interface is unclear because of experimental difficulty. Here we studied structure of a trivalent europium (Eu$$^{3+}$$) complex with HDEHP formed at HDEHP monolayer/water interface by heterodyne-detected vibrational sum frequency generation (HD-VSFG) spectroscopy. The study on the HDEHP/water interface enables us to investigate the structure of the interfacial Eu$$^{3+}$$ complex by excluding the migration of Eu$$^{3+}$$ into an organic phase after the complex formation at the interface. The interface-selective vibrational Im$$chi$$$$^{(2)}$$ spectra observed by HD-VSFG of HDEHP/Eu(NO$$_{3}$$)$$_{3}$$ aqueous solution interface in the 2800-3500 cm$$^{-1}$$ region indicate that Eu$$^{3+}$$ at the HDEHP/water interface is bonded by HDEHP from the air side and by water molecules from the water side. To the best of our knowledge, such metal complex structures have not been identified in the organic or water solutions.

Journal Articles

Modern radiation chemistry (Applications), 18; Radiation chemistry at solid/water interfaces

Kumagai, Yuta

Radioisotopes, 66(11), p.537 - 541, 2017/11

Radiation effects on the mixtures of inorganic oxides and water have been investigated for understanding radiation chemistry in solid-liquid systems. A number of studies revealed that energy deposition on solid phase stimulates reactions at the interface. This energy/charge transfer has been demonstrated by experiments to affect early stage of the radiation-induced reaction. However, the interfacial reactions subsequent to the energy/charge transfer require further studies. Here, we will see gaps between the basic understanding on the early stage and radiation effects in solid-liquid systems connected to applications, taking zeolite/water and uranium oxide/water interfaces for examples. Understanding of the interfacial reactions subsequent to the energy/charge transfer would bridge the gaps and enable to predict the radiation effects in applications.

Journal Articles

Observation of aerosol behavior near droplet interface

Uesawa, Shinichiro; Yoshida, Hiroyuki

Konsoryu Shimpojiumu 2017 Koen Rombunshu (USB Flash Drive), 2 Pages, 2017/08

no abstracts in English

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:14 Percentile:27.22(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

 Times Cited Count:30 Percentile:14.1(Physics, Applied)

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al$$_{2}$$O$$_{3}$$ films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

Journal Articles

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

 Times Cited Count:4 Percentile:71.74(Physics, Applied)

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

Journal Articles

Enhancement of SiO$$_{2}$$/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

Ogawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Takakuwa, Yuji*

Journal of Chemical Physics, 145(11), p.114701_1 - 114701_7, 2016/09

 Times Cited Count:3 Percentile:83.88(Chemistry, Physical)

Enhancement of SiO$$_{2}$$/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation was revealed by real time photoelectron spectroscopy using high intensity and high energy-resolution synchrotron radiation. This experimental result indicates the usefulness of the unified Si oxidation reaction model mediated by point defect generation.

Journal Articles

Magnetic field dependence of the canted spin moment around the interface between ferromagnetic Ni and antiferromagnetic FeMn revealed by the polarized neutron reflectivity

Amemiya, Kenta*; Sakamaki, Masako*; Mizusawa, Mari*; Takeda, Masayasu

JPS Conference Proceedings (Internet), 8, p.034004_1 - 034004_6, 2015/09

Journal Articles

Electrochemistry at liquid/liquid interface

Kitatsuji, Yoshihiro

Bunseki, 2015(6), p.239 - 244, 2015/06

AA2014-0843.pdf:3.48MB

Electrochemical studies of ion transfer and charge transfer at liquid/liquid interface reported between 2012 and 2014 were surveyed. They were categorized by method of measurement. The merit of the method, improvement, species of application were described. Applied research such as analyses of redox inactive species, sensitive analyses based on adsorption at the interface and developments of new functional materials had been widely carried out.

Journal Articles

Development of numerical simulation for jet breakup behavior in complicated structure of BWR lower plenum, 6; Influence of the simulant molten fuel properties on jet breakup phenomenon in multi-channels

Suzuki, Takayuki; Yoshida, Hiroyuki; Abe, Yutaka*; Kaneko, Akiko*

Proceedings of 23rd International Conference on Nuclear Engineering (ICONE-23) (DVD-ROM), 7 Pages, 2015/05

In order to improve the safety of Boiling Water Reactor (BWR), it is required to know the behavior of the plant when an accident occurred. Especially, it is important to estimate the behavior of molten core jet in the lower part of the reactor pressure vessel at a severe accident. In the BWR lower plenum, the flow characteristics of molten core jet are affected by many complicated structures, such as control rod guide tubes, instrument guide tubes and core support plate. The objective of this study is to develop the simulation method for the flow characteristic of molten core jet including the effects of the complicated structures in the lower plenum based on interface tracking method code TPFIT (Two Phase Flow simulation code with Interface Tracking). To verify and validate the applicability of the developed method in detail, it is necessary to obtain the experimental data that can be compared with detailed numerical results by the TPFIT. Therefore, experimental works by use of multi-phase flow visualization technique were also carried out. In the experiments, time series of interface shapes are observed by high speed camera and velocity profiles in/out of the jet were measured by the PIV method. In this paper, we carried out a numerical simulation of the jet breakup phenomena in the multi-channels with various simulant molten materials to evaluate the influence of properties on the jet breakup phenomena. As a result, it was confirmed that density and surface tension affected on the falling down velocity of the simulant materials and the interface behavior of the molten jet. However, viscosities of the simulant materials have small effects on jet breakup phenomena, including the interface shape and size of fragments.

204 (Records 1-20 displayed on this page)