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Woo, W.*; Naeem, M.*; Jeong, J.-S.*; Lee, C.-M.*; Harjo, S.; Kawasaki, Takuro; He, H.*; Wang, X.-L.*
Materials Science & Engineering A, 781, p.139224_1 - 139224_7, 2020/04
Times Cited Count:58 Percentile:94.70(Nanoscience & Nanotechnology)Komatsu, Kazuki*; Machida, Shinichi*; Noritake, Fumiya*; Hattori, Takanori; Sano, Asami; Yamane, Ryo*; Yamashita, Keishiro*; Kagi, Hiroyuki*
Nature Communications (Internet), 11, p.464_1 - 464_5, 2020/02
Times Cited Count:60 Percentile:87.24(Multidisciplinary Sciences)Water freezes below 0C at ambient pressure ordinarily to ice I
, with hexagonal stacking sequence. Under certain conditions, ice with a cubic stacking sequence can also be formed, but ideal ice I
without stacking-disorder has never been formed until recently. Here we demonstrate a route to obtain ice I
without stacking-disorder by degassing hydrogen from the high-pressure form of hydrogen hydrate, C
, which has a host framework isostructural with ice I
. The stacking-disorder free ice I
is formed from C
via an intermediate amorphous or nano-crystalline form under decompression, unlike the direct transformations occurring in ice XVI from neon hydrate, or ice XVII from hydrogen hydrate. The obtained ice I
shows remarkable thermal stability, until the phase transition to ice I
at 250 K, originating from the lack of dislocations. This discovery of ideal ice I
will promote understanding of the role of stacking-disorder on the physical properties of ice as a counter end-member of ice I
.
Woo, W.*; Jeong, J.-S.*; Kim, D.-K.*; Lee, C. M.*; Choi, S.-H.*; Suh, J.-Y.*; Lee, S. Y.*; Harjo, S.; Kawasaki, Takuro
Scientific Reports (Internet), 10(1), p.1350_1 - 1350_15, 2020/01
Times Cited Count:96 Percentile:95.72(Multidisciplinary Sciences)Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*
Applied Physics Letters, 83(2), p.275 - 277, 2003/07
Times Cited Count:18 Percentile:56.69(Physics, Applied)We observed an intermediate structure during the re-crystallization process from the amorphous state of BiTi
O
prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore Bi
Ti
O
phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of Bi
O
, some are inserted between the pseudo-perovskite layers of Bi
Ti
O
, and a non-stoichiometric Bi
WO
-like structure is stabilized.
Jitsukawa, Shiro; Katano, Yoshio; ; F.A.Garner*
Effects of Radiation on Materials, p.1034 - 1050, 1992/00
no abstracts in English
Ito, Tatsuya; Ogawa, Yuhei*; Gong, W.; Mao, W.; Kawasaki, Takuro; Okada, Kazuho*; Shibata, Akinobu*; Harjo, S.
no journal, ,
no abstracts in English
Ito, Tatsuya; Ogawa, Yuhei*; Gong, W.; Mao, W.; Kawasaki, Takuro; Okada, Kazuho*; Shibata, Akinobu*; Harjo, S.
no journal, ,
no abstracts in English
Ito, Tatsuya; Ogawa, Yuhei*; Gong, W.; Kawasaki, Takuro; Shibata, Akinobu*; Harjo, S.
no journal, ,
no abstracts in English
Ito, Tatsuya; Ogawa, Yuhei*; Gong, W.; Kawasaki, Takuro; Okada, Kazuho*; Shibata, Akinobu*; Harjo, S.
no journal, ,
no abstracts in English