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Journal Articles

In-situ observation of strain and stress evolution during thin film growth on H-terminated Si

Asaoka, Hidehito; Yamazaki, Tatsuya*; Shamoto, Shinichi

Nippon Kessho Seicho Gakkai-Shi, 32(3), 52 Pages, 2005/08

no abstracts in English

Journal Articles

Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces

Asaoka, Hidehito; Cherepanov, V.*; Voigtl$"a$nder, B.*

Surface Science, 588(1-3), p.19 - 25, 2005/08

 Times Cited Count:23 Percentile:30.94(Chemistry, Physical)

We determined the average size of small Si and Ge clusters con$$cdot$$ned to one half of a (7$$times$$7) or (5$$times$$5) unit cell of a Si or Ge(111) surface. The size of Si and Ge clusters con$$cdot$$ned to a Si(111)-(7$$times$$7) half unit cell was determined to be 8.3$$pm$$1 atoms and 7.5$$pm$$1 atoms, respectively for a growth temperature of 400 K. This is the same value within the error and shows, that the material of the clusters is less important for the cluster size. On the Ge surface it was found that the reconstruction unit cell is important for the cluster size. On the (5$$times$$5) reconstructed Ge(111) surface the Si clusters have a smaller size of 4.7$$pm$$1 atoms compared to 8.2$$pm$$1 atoms for Si clusters on the Ge(111)-(7$$times$$7) surface.

Journal Articles

Interrelation between speckle images in X-ray diffraction spots of YBa$$_{2}$$Cu$$_{3}$$O$$_{7-x}$$ and its superconductive phase transition

Suzuki, Takuya*; Takano, Hidekazu*; Takeuchi, Akihisa*; Uesugi, Kentaro*; Asaoka, Hidehito; Suzuki, Yoshio*

X-sen Bunseki No Shimpo, 36, p.249 - 257, 2005/03

no abstracts in English

Journal Articles

Effects of ultrastrong gravitational field on the crystalline state of a Bi-Sb alloy

Huang, X.*; Mashimo, Tsutomu; Ono, Masao; Tomita, Takeshi; Sawai, Tomotsugu; Osakabe, Toyotaka; Mori, Nobuo*

Journal of Applied Physics, 96(3), p.1336 - 1340, 2004/08

 Times Cited Count:11 Percentile:54.65(Physics, Applied)

Mega-gravity field experiments were performed on the Bi$$_{70}$$Sb$$_{30}$$(atomic percent) alloy and pure Bi below their melting points, to investigate the change in crystalline state. For the alloy centrifuged at 191-205 $$^{circ}$$C, no change in composition was observed, and the grain sizes of the crystals decreased from several mm to tens of $$mu$$m, while no distinct change in grain size was observed for the centrifuged pure Bi. The alloy centrifuged at 220-240 $$^{circ}$$C consisted of two regions with different morphologies-fine-grained crystals with grain sizes around tens of $$mu$$m in the low gravity region, and large crystals with grain sizes several mm long and hundreds of $$mu$$m wide along the direction of gravity in the high gravity region, where sedimentation of atoms was confirmed. The large crystals with hexagonal structures were formed by preferential crystal growth roughly along the c axes, and a large strain that increased as the gravitational field increased existed inside these crystals. Formation of this anomalous crystal state might be correlated with the sedimentation of atoms.

Journal Articles

Growth and characterization of thin films on hydrogen layers

Asaoka, Hidehito

KEK Proceedings 2004-5, p.52 - 53, 2004/08

no abstracts in English

Journal Articles

Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy

Paul, N.*; Asaoka, Hidehito; Voigtl$"a$nder, B.*

Surface Science, 564(1-3), p.187 - 200, 2004/08

 Times Cited Count:6 Percentile:63.89(Chemistry, Physical)

Using scanning tunneling microscopy (STM) the Ge epitaxy on a Bi terminated Si(111) surface is compared to the growth without surfactant. As soon as the 2 bilayer high wetting layer is completed with surfactant, Ge islands with a flat top and an underlying dislocation network occur. Elastic distortions due to the dislocation network result in periodic sub-Angstrom height undulations measured by the STM. In this case the Ge islands have the form of a mesa. With increasing Ge coverage, these mesas spread laterally. Beyond a Ge coverage of 10 bilayers, the Ge mesas have coalesced and further Ge deposition leads to a 2D layer-by-layer growth of Ge on Si(111). In epitaxy without the use of a surfactant as well, the formation of Ge islands with an underlying dislocation network is observed. However, in this case the Ge islands are much higher and show no tendency to coalesce. The partially relaxed islands coexist with another type of tall islands.

Journal Articles

Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant

Paul, N.*; Asaoka, Hidehito; Myslive$v{c}$ek, J.*; Voigtl$"a$nder, B.*

Physical Review B, 69(19), p.193402_1 - 193402_4, 2004/05

A2003-0489.pdf:0.64MB

 Times Cited Count:20 Percentile:31.41(Materials Science, Multidisciplinary)

We compare the initial stages of growth of Ge on Si(111) with Bi as a surfactant and without surfactant. At the beginning of growth, 3D islands with a strain relieving dislocation network at their base are formed in both growth systems. These islands can be regarded as seeds of a flat relaxed Ge layer on Si(111). However, such Ge layer forms at later stages of growth only in the growth with Bi surfactant, while the growing Ge layer without surfactant remains rough. What makes the dierence and the success of Bi surfactant mediated epitaxy is the lateral growth and coalescence of the seed islands that cover the entire surface within first 15 bilayers of Ge deposition. This happens due to a kinetic limitation of the incorporation of Ge into the growing layer in the presence of surfactant.

Journal Articles

Effect of pressure on nucleation and growth in the ZrTiCuNiBe bulk glass forming alloy investigated using in situ X-ray diffraction

Wang, W. H.*; Okada, Taku; Wen, P.*; Wang, X. L.*; Pan, M. X.*; Zhao, D. Q.*; Utsumi, Wataru

Physical Review B, 68(18), p.184105_1 - 184105_6, 2003/11

 Times Cited Count:27 Percentile:22.12(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Formation and crystallization of CuZrHfTi bulk metallic glass under ambient and high pressures

Wang, Z. X.*; Zhao, D. Q.*; Pan, M. X.*; Wang, W. H.*; Okada, Taku; Utsumi, Wataru

Journal of Physics; Condensed Matter, 15(35), p.5923 - 5932, 2003/09

 Times Cited Count:20 Percentile:30.03(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Crystallization of a large single crystal of a B-DNA decamer for a neutron diffraction experiment by the phase-diagram technique

Arai, Shigeki; Chatake, Toshiyuki; Minezaki, Yoshiaki*; Niimura, Nobuo

Acta Crystallographica Section D, 58(Part 1), p.151 - 153, 2002/01

 Times Cited Count:23 Percentile:16.02(Biochemical Research Methods)

no abstracts in English

Journal Articles

Measurement and control of the crystal growth rate of tetragonal hen egg-white lysozyme imaged with an atomic force microscope

Rong, L.*; Yamane, T.*; Niimura, Nobuo

Journal of Crystal Growth, 217(1-2), p.161 - 169, 2000/07

 Times Cited Count:25 Percentile:15.02

no abstracts in English

Journal Articles

Low-temperature epitaxial growth of SrO on hydrogen-passivated Si(100) surface

Asaoka, Hidehito; Saiki, Koichiro*; Koma, Atsushi*; Yamamoto, Hiroyuki

Physica B; Condensed Matter, 284-288, p.2101 - 2102, 2000/07

 Times Cited Count:0 Percentile:100

no abstracts in English

JAEA Reports

Changes in tensile property and X-ray parameter for carbon fiber after high temperature heat-treatment

Saito, Tamotsu; Baba, Shinichi; Eto, Motokuni

JAERI-Research 99-070, p.21 - 0, 2000/01

JAERI-Research-99-070.pdf:1.32MB

no abstracts in English

Journal Articles

Polar structure of lysozyme aggregates in unsaturated solution determined by small-angle neutron scattering-contrast variation method

Niimura, Nobuo; Minezaki, Yoshiaki; *; Fujiwara, Satoru; *

Journal of Crystal Growth, 200, p.265 - 270, 1999/00

 Times Cited Count:14 Percentile:26.96

no abstracts in English

Journal Articles

Aggregation in supersaturated lysozyme solution studied by time-resolved small angle neutron scattering

Niimura, Nobuo*; Minezaki, Yoshiaki; *; *

Journal of Crystal Growth, 154, p.136 - 144, 1995/00

 Times Cited Count:68 Percentile:2.27

no abstracts in English

Journal Articles

Small-angle neutron scattering from lysozyme crystallization process

Niimura, Nobuo*; *; Minezaki, Yoshiaki; *

Physica B; Condensed Matter, 213-214, p.745 - 747, 1995/00

 Times Cited Count:7 Percentile:53.28

no abstracts in English

Journal Articles

Small angle neutron scattering from lysozyme in unsaturated solutions, to characterize the pre-crystallization process

Niimura, Nobuo*; Minezaki, Yoshiaki; *; *

Journal of Crystal Growth, 137, p.671 - 675, 1994/00

 Times Cited Count:32 Percentile:5.77

no abstracts in English

Journal Articles

Structure study of biological macromolecule

Niimura, Nobuo*

Nippon Kessho Gakkai-Shi, 36, p.157 - 161, 1994/00

no abstracts in English

Journal Articles

Crystal growth mechanism from solid-melt mixtures; On growth of oxide superconductor crystals

*; *; *; Asaoka, Hidehito

Nippon Kessho Seicho Gakkai-Shi, 21(5(94SUPPLE)), p.S461 - S468, 1994/00

no abstracts in English

29 (Records 1-20 displayed on this page)