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Journal Articles

Analysis of carbon thin films by laser Raman method

Kinsho, Michikazu; Kamiya, Junichiro; Koizumi, Oji*; Nasu, Shogo*

Proceedings of 15th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.668 - 670, 2018/08

Crystallinity, crystalline structure and internal force of thin films were measured by Laser Raman spectroscopy for the purpose of analyzing the fracture mechanism of the charge exchange foil due to beam hitting in this study. Thin films were used four types of HBC foil, pure carbon film (C foil) formed by arc discharge method, graphene, and carbon nanotube (CNT foil). As a result of changing the laser output and measuring the Raman peak shift of each foil, the HBC foil and the C foil had large Raman peak shift change, the D-band was negative and the G-band was opposite sign with positive. On the other hand, the graphene and the CNT foil showed small change in Raman peak shift, and both D-band and G-band were negative. From these results, it was found that a large stress occurs in the HBC foil and the C foil due to the heat load by the laser which was used for Raman spectrum measurements.

Journal Articles

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie*

Advances in Engineering (Internet), 1 Pages, 2018/02

The performance of organic devices largely depends on molecular orientation in organic films. Whereas micro-orientation control of organic molecules is an indispensable technology for integration of organic devices, the method has not been established. We attempted to control micro-orientation of polydimethylsilane (PDMS) thin films by deposition of PDMS on graphite substrates modified by hetero atom doping using ion beam. Polarization dependence measurements of X-ray absorption spectroscopy and molecular orbital calculations clarified that PDMS films have lying, standing, and random orientations on the non irradiated, N$$_{2}$$$$^{+}$$-irradiated, and Ar$$^{+}$$-irradiated graphite surfaces, respectively. Furthermore, photoemission microscopy observation clarified that a PDMS film showed micro-patterns on a graphite surface with a microstructure on the order of $$mu$$m by separating N$$_{2}$$$$^{+}$$-irradiated and non irradiated areas. These results demonstrate our method is promising for micro-orientation of organic molecules.

Journal Articles

Mn$$_{2}$$VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi; Nakao, Akiko*; Takanashi, Koki*

Journal of Physics D; Applied Physics, 51(6), p.065001_1 - 065001_7, 2018/02

 Times Cited Count:2 Percentile:70.63(Physics, Applied)

Journal Articles

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie*

Applied Surface Science, 405, p.255 - 266, 2017/05

 Times Cited Count:1 Percentile:88.37(Chemistry, Physical)

NEXAFS spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si ${it K}$-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N$$_{2}$$$$^{+}$$-irradiated substrates, and show no polarization dependence for an Ar$$^{+}$$-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N$$_{2}$$$$^{+}$$-irradiated, and Ar$$^{+}$$-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of $$mu$$m by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Journal Articles

Observation of oriented organic semiconductor using Photo-Electron Emission Microscope (PEEM) with polarized synchrotron

Sekiguchi, Tetsuhiro; Baba, Yuji; Hirao, Norie; Honda, Mitsunori; Izumi, Toshinori; Ikeura, Hiromi*

Molecular Crystals and Liquid Crystals, 622(1), p.44 - 49, 2015/12

BB2014-1632.pdf:0.72MB

 Times Cited Count:0 Percentile:100(Chemistry, Multidisciplinary)

The molecular orientation is one of the important factors for controlling various properties in organic semiconductor materials. Films are usually heterogeneous. Thus they exist as a mixture of microscopic domains which have a variety of orientation directions. Therefore, it is essential to observe selectively microscopic domains with different orientation direction. In this work, we have developed the photoelectron emission microscopy (PEEM) system combined with the linearly polarized vacuum ultraviolet (VUV) light or synchrotron radiation (SR) X-rays. PEEM images (FOV = ca.50 micro m) for poly(3-hexylthiophene), P3HT thin films were observed under the UV irradiation with various polarization angles, including in-plain and out-of-plain polarization. Morphologies at some bright parts are different each other. The resultant observation suggests that it enables us to distinguish oriented micro-domains with specific directions of polymer chain axis from other amorphous parts.

Journal Articles

Growth of single-phase nanostructured Er$$_2$$O$$_3$$ thin films on Si (100) by ion beam sputter deposition

Mao, W.*; Fujita, Masaya*; Chikada, Takumi*; Yamaguchi, Kenji; Suzuki, Akihiro*; Terai, Takayuki*; Matsuzaki, Hiroyuki*

Surface & Coatings Technology, 283, p.241 - 246, 2015/12

 Times Cited Count:2 Percentile:86.2(Materials Science, Coatings & Films)

Single-phase nanocrystalline thin films of Er$$_2$$O$$_3$$ (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 973 K at a pressure of $$<$$ 10$$^{-5}$$ Pa and $${it in}$$-$${it situ}$$ annealing at 1023 K at a pressure of $$approx$$ 10$$^{-7}$$ Pa. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the Er$$_2$$O$$_3$$ thin films. The epitaxial relationship between Si (100) and Er$$_2$$O$$_3$$ (110) is clarified by X-ray diffraction and reflection high energy electron diffraction.

Journal Articles

Magnetic field dependence of the canted spin moment around the interface between ferromagnetic Ni and antiferromagnetic FeMn revealed by the polarized neutron reflectivity

Amemiya, Kenta*; Sakamaki, Masako*; Mizusawa, Mari*; Takeda, Masayasu

JPS Conference Proceedings (Internet), 8, p.034004_1 - 034004_6, 2015/09

Journal Articles

Depth analysis of the surface of Mg$$_{2}$$Si crystals with XAS and XPS

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka

Photon Factory Activity Report 2014, Part B, P. 112, 2015/00

In order to develop silicon-based electronic devices, metal silicides are widely studied. Information of the surface chemical states of metal silicides is important to obtain homo-epitaxial films with excellent quality. In this work, depth analysis of surface chemical states of Mg$$_{2}$$Si crystals is carried by XPS. Depth analysis is also performed in XAS measurement with a partial electron yield (PEY) mode. The Si 1s XPS spectra of the cleaved surface of the Mg$$_{2}$$Si crystal indicates that SiO is formed on the surface of the Mg$$_{2}$$Si crystal. Here, no peak assigned to SiO$$_{2}$$ structure is observed. The Si K-edge XAS spectra obtained with the PEY mode show a peak at 1843.7 eV, which can be assigned to SiO structure.

Journal Articles

Orientation effect of organic semiconducting polymer revealed using Photo-Electron Emission Microscope (PEEM)

Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Hirao, Norie; Honda, Mitsunori; Izumi, Toshinori; Ikeura, Hiromi*

Photon Factory Activity Report 2013, Part B, P. 546, 2014/00

The molecular orientation is one of the important factors for controlling various properties in organic semiconductor materials. Films are usually heterogeneous. Thus they exist as a mixture of microscopic domains which have a variety of orientation directions. Therefore, it is essential to observe selectively microscopic domains with different orientation direction. In this work, we have developed the photoelectron emission microscope (PEEM) system combined with the linearly polarized vacuum ultraviolet (VUV) light or synchrotron radiation (SR) X-rays. PEEM images for poly(3-hexylthiophene), P3HT thin films were observed under synchrotron X-ray irradiation with linearly polarization. In conclusion, it was found that PEEM with polarized synchrotron can be a powerful tool that gives information of molecular orientation in nano-meter scale.

Journal Articles

Molecular orientation of pentacene derivative

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro

Photon Factory Activity Report 2013, Part B, P. 518, 2014/00

Organic electrically conducting $$pi$$-stacked small molecules are widely regarded as promising materials for future application of low-cost and flexible nanoelectronics. Pentacene is one of the most promising organic semiconductors because of its excellent device performance. Direct measurements of electronic structures of unoccupied states of organic semiconductors lead to better understanding of mechanism of electron conduction. For probing unoccupied partial density of states (DOS), X-ray absorption spectroscopy (XAS) is commonly used, where selective excitation of the 1s core electron to the unoccupied conduction band is possible. The molecular orientation of pentacene derivative has been investigated by angle dependent XAS measurements. Electronic states were calculated by DVX$$alpha$$ method.

Journal Articles

Non-destructive depth profiling of Au/Si(100) with X-ray absorption spectroscopy

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka

Photon Factory Activity Report 2013, Part B, P. 227, 2014/00

In the present study, we examined to perform depth profiling with X-ray absorption spectroscopy (XAS) by changing electron energies (5-50 eV) for detection in order to develop non-destructive depth profiling method with chemical state information. Gold thin films (1-10 nm) deposited on Si(100) were used for specimens. The Si/Au ratios were calculated from the peak heights of each edge using observed XAS spectra. Obvious correlation between the Si/Au ratio and the electron energy is observed. With decreasing electron energy, the ratio increased significantly. This means that by reducing electron energy, information on deeper region of the surface can be obtained. These results indicate that by changing electron energies for detection, it is possible to perform non-destructive depth profiling in XAS analysis.

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

 Times Cited Count:14 Percentile:27.1(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

 Times Cited Count:23 Percentile:14.2(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

Asaoka, Hidehito; Yamazaki, Tatsuya*; Yamamoto, Hiroyuki; Shamoto, Shinichi

Thin Solid Films, 508(1-2), p.175 - 177, 2006/06

 Times Cited Count:4 Percentile:75.41(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

In-situ observation of strain and stress evolution during thin film growth on H-terminated Si

Asaoka, Hidehito; Yamazaki, Tatsuya*; Shamoto, Shinichi

Nippon Kessho Seicho Gakkai-Shi, 32(3), 52 Pages, 2005/08

no abstracts in English

Journal Articles

Investigation of perpendicular magnetic films by means of soft X-ray magnetic circular dichroism spectroscopy

Agui, Akane; Mizumaki, Masaichiro*; Asahi, Toru*

Hoshako, 18(4), p.215 - 222, 2005/07

no abstracts in English

Journal Articles

Characterization and degradation of ZEP520 resist film by TOF-PSID and NEXAFS

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro; Koike, Masaki*

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.453 - 455, 2005/06

 Times Cited Count:11 Percentile:49.13(Spectroscopy)

no abstracts in English

Journal Articles

Polarization-dependent dissociation selectively induced by core-electron excitation in methyl ester terminated self-assembled monolayer

Kizaki, Hiroyuki*; Wada, Shinichi*; Sako, Erika*; Sumii, Ryohei*; Waki, Satoshi*; Isari, Koji*; Sekitani, Tetsuji*; Sekiguchi, Tetsuhiro; Tanaka, Kenichiro*

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.447 - 451, 2005/06

 Times Cited Count:5 Percentile:70.47(Spectroscopy)

no abstracts in English

Journal Articles

Natural circular dichroism of amino acid films observed in soft X-ray and VUV region using polarizing undulator

Nakagawa, Kazumichi*; Kaneko, Fusae*; Ota, Yoshimi*; Tanaka, Masahito*; Kitada, Tomo*; Agui, Akane; Fujii, Kentaro; Yokoya, Akinari; Watanabe, Kazutoshi*; Yamada, Toru*

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.271 - 273, 2005/06

 Times Cited Count:12 Percentile:46.21(Spectroscopy)

no abstracts in English

Journal Articles

Chemical evolution of amino acid induced by soft X-ray with synchrotron radiation

Kaneko, Fusae*; Tanaka, Masahito*; Narita, Satoru*; Kitada, Tomo*; Matsui, Takahiro*; Nakagawa, Kazumichi*; Agui, Akane; Fujii, Kentaro; Yokoya, Akinari

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.291 - 294, 2005/06

 Times Cited Count:18 Percentile:33.43(Spectroscopy)

no abstracts in English

137 (Records 1-20 displayed on this page)