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Kato, Hiroyuki S.*; Muroyama, Mizuho*; Kobayakawa, Nano*; Muneyasu, Riku*; Tsuda, Yasutaka; Murase, Natsumi*; Watanabe, Seiya*; Yamada, Takashi*; Kanematsu, Yusuke*; Tachikawa, Masanori*; et al.
Journal of Physical Chemistry Letters (Internet), 15(43), p.10769 - 10776, 2024/10
Times Cited Count：1 Percentile：37.13(Chemistry, Physical)Nakamura, Takafumi*; Yamamoto, Yukio*; Arakawa, Masakazu*; Maruyama, Akio*; Yoshigoe, Akitaka
Sangyo Oyo Kogakukai Rombunshi, 11(2), p.109 - 114, 2023/09
Surface chemistry experimental end-station at BL23SU in SPring-8 is widely used to study various surfaces and interfaces of functional materials by means of soft X-rays synchrotron radiation. To analyze surface chemical reactions between gas and solid surfaces, an accurate control of flow-rates of gases is essential. This paper describes a computerized automatic gas flow control system to improve the accuracy and reproducibility of gas-surface reaction experiments in the pressure range of ultra-high vacuum (molecular flow) conditions. The system uses feedback control to operate the slow-leak valve to control the gas-pressure. As a result, the system achieved results equivalent to those of a skilled experimenter.
/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiOOnishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*
Japanese Journal of Applied Physics, 62(5), p.050903_1 - 050903_4, 2023/05
Times Cited Count：5 Percentile：47.87(Physics, Applied)While the formation of an GaO
interlayer is key to achieving SiO/GaN interfaces with low defect density, it can affect the reliability and stability of metal-oxide-semiconductor (MOS) devices if the annealing conditions are not properly designed. In the present study, we aimed to minimize the growth of the GaO layer on the basis of the sputter deposition of SiO on GaN. Synchrotron radiation X-ray photoelectron spectrometry measurements confirmed the suppressed growth of the GaO layer compared with a SiO/GaN structure formed by plasma-enhanced chemical vapor deposition. Negligible GaO growth was also observed when subsequent oxygen annealing up to 600
C was performed. A MOS device with negligible capacitance-voltage hysteresis, nearly ideal flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600C and 400C, respectively.
Tamura, Kazuhisa; Akutsu-Suyama, Kazuhiro*; Cagnes, M.*; Darwish, T. A.*
ECS Advances (Internet), 1(2), p.020503_1 - 020503_5, 2022/06
The ionic liquid/Si electrode interface was investigated using neutron reflectivity. We precisely elucidated the structure of the electrical double layer formed at 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide ([BMIM]TFSA)/Si(100) electrode interface with the orientation of the [BMIM]TFSA molecule using a partially deuterated [BMIM]TFSA. The results revealed that [BMIM]TFSA molecules form a layered structure. Cation and anion molecules are alternatingly stacked and molecules in the first three layers are horizontally oriented to the electrode surface at E = -1.2 V, i.e., on the negatively charged electrode surface. It was also revealed that the imidazole ring in [BMIM] cation is parallel to the electrode surface.
/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistorsWatanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06
Times Cited Count：12 Percentile：46.31(Physics, Applied)The advantage of SiO/AlON stacked gate dielectrics over SiO, AlON and AlO
single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.
Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.
Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06
Times Cited Count：25 Percentile：67.71(Physics, Applied)We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.
/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidationOgawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Takakuwa, Yuji*
Journal of Chemical Physics, 145(11), p.114701_1 - 114701_7, 2016/09
Times Cited Count：5 Percentile：17.21(Chemistry, Physical)Enhancement of SiO/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation was revealed by real time photoelectron spectroscopy using high intensity and high energy-resolution synchrotron radiation. This experimental result indicates the usefulness of the unified Si oxidation reaction model mediated by point defect generation.
using visible light reflectivity measurementTamura, Kazuhisa
no journal, ,
Ionic liquids (IL) have high electrical conductivity without any supporting electrolyte; therefore, ILs can be used as an electrolyte. On the other hand, it has been found that electrochemical reactions in ILs are greatly different from those in water electrolytes. In the case of electrodeposition reactions, the shape of deposits is greatly different between in ILs and water electrolytes. The underpotential deposition (UPD), which is the initial process of the electrodeposition reaction, also shows different reactivity in between ILs and water electrolytes. In this study, the detailed process of UPD in an IL was investigated. [BMIM]BF was used as an electrolyte and Bi was used as a metal. Results show that the Bi UPD in [BMIM]BF consists of three processes and the UPD reaction is the three-electron reaction. However, the first reaction was the 4.4-electron reaction, indicating that the UPD reaction proceeds with the co-ad(de)sorption of IL molecules.
