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Ogawa, Shuichi*; Zhang, B.*; Yoshigoe, Akitaka; Takakuwa, Yuji*
Vacuum and Surface Science, 64(5), p.218 - 223, 2021/05
The oxidation reaction kinetics on Ti(0001) and Ni(111) surfaces were observed by real-time photoelectron spectroscopy using synchrotron radiation to measure the oxidation state and oxide thickness. After the Ti(0001) surface was wholly covered by TiO with a thickness of 1.2 nm, the rapid growth of n-type TiO proceeded through the diffusion of Ti ions to the TiO surface at 400C. A saturation of oxygen uptake on the TiO surface indicates that the O sticking coefficient on the TiO surface is negligibly small and the segregation of Ti to the TiO surface is a trigger to initiate the TiO growth. On the Ni(111) surface at 350C, a thermally stable NiO proceeded preferentially and then the growth of p-type NiO was initiated. The time evolution of NiO thickness was represented by a logarithmic growth model, where the NiO growth is governed by the electron tunneling to the NiO surface.
Takata, Fumiya*; Ito, Keita*; Takeda, Yukiharu; Saito, Yuji; Takanashi, Koki*; Kimura, Akio*; Suemasu, Takashi*
Physical Review Materials (Internet), 2(2), p.024407_1 - 024407_5, 2018/02
Times Cited Count:14 Percentile:47.69(Materials Science, Multidisciplinary)Yasuda, Satoshi; Takahashi, Ryosuke*; Osaka, Ryo*; Kumagai, Ryota*; Miyata, Yasumitsu*; Okada, Susumu*; Hayamizu, Yuhei*; Murakoshi, Kei*
Small, 13(31), p.1700748_1 - 1700748_8, 2017/08
Times Cited Count:25 Percentile:73.28(Chemistry, Multidisciplinary)MoS and MoSe monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out-of-plane strain in both MoS and MoSe layers, whereas no strain generation is observed on polycrystalline Au or SiO/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S-Mo-S (Se-Mo-Se) structure and Au atoms via unique moir superstructure formation for MoS and MoSe layers on Au(111). This observation indicates that the specific adsorption sites give rise to out-of-plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS or MoSe layer.
Suzudo, Tomoaki; Yamaguchi, Masatake
Journal of Nuclear Materials, 465, p.695 - 701, 2015/10
Times Cited Count:12 Percentile:69.86(Materials Science, Multidisciplinary)To investigate what atomic properties largely determine vulnerability to He embrittlement at grain boundaries (GB) of bcc transition metals, we introduced a computational model composed of first principles density functional theory and a He segregation rate theory model. Predictive calculations of He embrittlement at the first wall of the future DEMO fusion concept reactor indicated that variation in the He embrittlement is originated not only from He production rate related to neutron irradiation, but also from the He segregation energy at the GB that has a systematic trend in the periodic table.
Agui, Akane; Mizumaki, Masaichiro*
Shingaku Giho, 104(409), p.7 - 10, 2004/11
no abstracts in English
Umebayashi, Tsutomu; Yamaki, Tetsuya; Sumita, Taishi*; Yamamoto, Shunya; Tanaka, Shigeru; Asai, Keisuke*
Nuclear Instruments and Methods in Physics Research B, 206, p.264 - 267, 2003/05
Times Cited Count:24 Percentile:81.71(Instruments & Instrumentation)Chromium (Cr) and niobium (Nb) were implanted into single-crystalline titanium dioxide (TiO; rutile). After annealing at 600C for the Cr-implanted sample or at 1000C for the Nb-implanted sample, the radiation damage was recovered. The implanted metals occupied titanium (Ti) sites in TiO to form metal-oxygen bonds. According to the ultraviolet-ray photoelectron spectra, a localized level due to the implanted metals was formed in band gap of both the crystals. This position was close to the VB edge for the Cr-doped TiO, while the Nb-doped TiO had the small peak far from the edge. This is in good agreement with the ab-initio band calculation results. It is considered that the midgap states of Cr- and Nb-doped TiO consist of the Cr t or Ti t state, respectively.
Azuma, Masaki*; Saito, Takashi*; Ishiwata, Shintaro*; Yoshida, Hirofumi*; Takano, Mikio*; Kosaka, Yuki*; Takagi, Hidenori*; Utsumi, Wataru
Journal of Physics; Condensed Matter, 14(44), p.11321 - 11324, 2002/11
Times Cited Count:11 Percentile:50.63(Physics, Condensed Matter)no abstracts in English
Yoshii, Kenji; Nakamura, Akio
Recent Research Developments in Physics, 3, p.758 - 776, 2002/00
no abstracts in English
Sasaki, Teikichi; Chugan, Nobuhiko*; Muramatsu, Yasuji*
Nuclear Instruments and Methods in Physics Research A, 467-468(Part.2), p.1489 - 1492, 2001/07
Times Cited Count:3 Percentile:28.22(Instruments & Instrumentation)no abstracts in English
Koshino, M.*; Kurata, Hiroki; Isoda, Shoji*; Kobayashi, Takashi*
Micron, 31(4), p.373 - 380, 2000/03
Times Cited Count:12 Percentile:18.81(Microscopy)no abstracts in English
Yamaguchi, Masatake; Kyuno, K.*; Asano, S.*
Nihon Oyo Jiki Gakkai-Shi, 21(7), p.1014 - 1022, 1997/00
no abstracts in English
Okane, Tetsuo; Yamada, Mitsuki*; Suzuki, S.*; Sato, S.*; Kinoshita, Toyohiko*; Kakizaki, A.*; Ishii, T.*; Kobayashi, Takane*; Shimoda, S.*; Iwaki, M.*; et al.
Journal of Electron Spectroscopy and Related Phenomena, 80, p.241 - 244, 1996/05
Times Cited Count:4 Percentile:26.09(Spectroscopy)no abstracts in English
; Nemoto, Takeshi; Numata, Koji; *; *; Hanawa, Eiji*; *
PNC TN8440 94-011, 19 Pages, 1994/04
None
Radiation Physics and Chemistry, 29(N0.6), p.469 - 475, 1987/06
no abstracts in English