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Journal Articles

Measurement of ion beam induced current in quantum dot solar cells

Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11

The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.

Oral presentation

Radiation induced defects of III-V solar cells embedded with InAs quantum dots

Sato, Shinichiro; Schmieder, K.*; Hubbard, S.*; Forbes, D.*; Warner, J.*; Oshima, Takeshi; Walters, R.*

no journal, , 

GaAs pn-junction diodes with embedded InAs quantum dots (QDs) are irradiated with high energy protons and the generated deep level traps are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QDs in order to identify the origin of deep level traps. In addition, the fluence dependence of trap density is investigated and it is shown that traps induced by irradiation increase in proportion to the fluence whereas EL2 trap, which appears before irradiation, is not affected by irradiation.

Oral presentation

Evaluation of radiation degradation of GaAs solar cells with InGaAs quantum dot layers using radiation induced current

Oshima, Takeshi; Nakamura, Tetsuya*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Okano, Yoshinobu*

no journal, , 

Oral presentation

Proton irradiation degradation of GaAs solar cells with InGaAs quantum dot layers

Sato, Shinichiro; Oshima, Takeshi; Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Takeda, Akihiro*; Okano, Yoshinobu*

no journal, , 

no abstracts in English

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