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Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09
Times Cited Count:15 Percentile:70.33(Instruments & Instrumentation)We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400 C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. We find that the conductivity monotonically increases from 1.510 to 810 S/cm with increasing the fluence up to 410/cm, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310/cm (7 dpa). The dpa of 100 MeV Xe at 410/cm is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Ishikawa, Norito; Yamamoto, Shunya; Chimi, Yasuhiro
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.250 - 253, 2006/09
Times Cited Count:42 Percentile:92.68(Instruments & Instrumentation)Electronic excitation effects on TiO thin films with anatase structure irradiated with 230MeV Xe ions have been studied by means of X-ray diffraction method. X-ray diffraction intensity shows exponential decrease as a function of ion-fluence, indicating that tracks having about 10nm diameter are introduced by the irradiation. Rutile structured TiO was also irradiated and exhibited different damage behavior from that of anatase one. We demonstrated that X-ray diffraction meathod is one of the powerful tool to investigate track structure.
Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09
Times Cited Count:24 Percentile:82.87(Instruments & Instrumentation)We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400 C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.510 to 810 S/cm with increasing the fluence up to 410/cm, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310/cm (7 dpa). The dpa of 100 MeV Xe at 410/cm is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Fukuzumi, Masafumi*; Chimi, Yasuhiro; Ishikawa, Norito; Suzuki, Motohiro*; Takagaki, Masafumi*; Mizuki, Junichiro; Ono, Fumihisa*; Neumann, R.*; Iwase, Akihiro*
Nuclear Instruments and Methods in Physics Research B, 245(1), p.161 - 165, 2006/04
Times Cited Count:17 Percentile:74.42(Instruments & Instrumentation)We have performed swift heavy ion irradiations in Fe-50at.%Rh alloys at room temperature. Before and after the irradiations, the magnetic properties and the lattice structure are measured using Superconducting QUantum Interference Device (SQUID) and X-Ray Diffractometer (XRD), respectively. We have also performed X-ray Magnetic Circular Dichroism (XMCD) measurement near the Fe K-edge at the synchrotron radiation facility, SPring-8, to examine the irradiation-induced ferromagnetic state near the specimen surface. We have found that the swift heavy ion irradiations induce the ferromagnetic state in Fe-50at.%Rh alloy below the antiferromagnetism-ferromagnetism transition temperature of the unirradiated alloy and the lattice expasion by 0.3%. For the specimens irradiated with swift heavy ions, we observe the XMCD spectra correponding to ferromagnetisim, which depend on the mass of irradiating ions and/or irradiation fluence. Effects of energy loss through electronic excitation and elastic collisions on lattice and magnetic structures of Fe-Rh alloy are discussed.
Yamamoto, Tomokazu*; Shimada, Mikio*; Yasuda, Kazuhiro*; Matsumura, Sho*; Chimi, Yasuhiro; Ishikawa, Norito
Nuclear Instruments and Methods in Physics Research B, 245(1), p.235 - 238, 2006/04
Times Cited Count:13 Percentile:65.68(Instruments & Instrumentation)We have investigated the microstructure change and atomic disordering process in magnesium aluminate spinel, MgO AlO with =1.1 and 2.4, irradiated with swift heavy ions of 200-MeV Xe and 350-MeV Au. Transmission electron microscopy techniques of bright-field (BF) and high-resolution (HR) imaging, as well as high angular resolution electron channeling X-ray spectroscopy (HARECXS) are employed in quantitative analysis of irradiation-induced structural change. Ion tracks show columnar dark contrast of 4-7 nm in diameter at the incident surface in BF images. Strong strain contrast often arises among plural ion tracks formed closely. Clear lattice fringes are observed in HR images even inside the ion tracks. It indicates that the spinel crystals are not amorphized but partially disordered along the ion tracks. Quantitative HARECXS analysis shows that cation disordering progresses with ion fluence. It is revealed that the disordered regions are extended over 122 nm in diameter along the ion tracks.