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Journal Articles

Charge-collection efficiency of single-crystal CVD diamond detector for low-energy charged particles with energies ranging from 100 keV to 2 MeV

Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*

Nuclear Instruments and Methods in Physics Research A, 834, p.218 - 222, 2016/10

 Times Cited Count:1 Percentile:84.49(Instruments & Instrumentation)

Journal Articles

Charge-collection efficiency and long-term stability of single-crystal CVD diamond detector under different carrier-drift conditions

Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*

Japanese Journal of Applied Physics, 55(4), p.046401_1 - 046401_5, 2016/04

 Times Cited Count:2 Percentile:85.75(Physics, Applied)

We investigated the performance of a charged particle detector fabricated using single-crystal diamond grown by chemical vapor deposition. The detector was able to identify four different $$^{241}$$Am $$alpha$$-particle energies (5.389, 5.443, 5.486, and 5.545 MeV) because of its superior intrinsic energy resolution of $$sim$$0.4% (full width at half maximum). The charge collection efficiency inside the diamond crystal was $$sim$$98% for both electrons and holes. The diamond detector also exhibited no significant degradation in terms of pulse height spectra and energy resolution during operation for more than 100 h in the case of mainly electron drift inside the diamond crystal. In contrast, the shapes of the pulse height spectra measured under hole drift condition deteriorated due to the polarization phenomenon.

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:6 Percentile:42.14(Instruments & Instrumentation)

Journal Articles

Charge induced in 6H-SiC pn diodes by irradiation of oxygen ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi

Materials Science Forum, 527-529, p.1347 - 1350, 2006/00

Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.

Journal Articles

Radiation effect on pn-SiC diode as a detector

Kinoshita, Akimasa*; Iwami, Motohiro*; Kobayashi, Kenichi*; Nakano, Itsuo*; Tanaka, Reisaburo*; Kamiya, Tomihiro; Oi, Akihiko; Oshima, Takeshi; Fukushima, Yasutaka*

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.213 - 220, 2005/04

 Times Cited Count:24 Percentile:15.46(Instruments & Instrumentation)

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