Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Nakazawa, Tetsuya; Naito, Akira*; Aruga, Takeo; Grismanovs, V.*; Chimi, Yasuhiro; Iwase, Akihiro*; Jitsukawa, Shiro
Journal of Nuclear Materials, 367-370(2), p.1398 - 1403, 2007/08
Times Cited Count:43 Percentile:92.75(Materials Science, Multidisciplinary)no abstracts in English
Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09
Times Cited Count:15 Percentile:70.33(Instruments & Instrumentation)We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400 C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. We find that the conductivity monotonically increases from 1.510 to 810 S/cm with increasing the fluence up to 410/cm, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310/cm (7 dpa). The dpa of 100 MeV Xe at 410/cm is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09
Times Cited Count:24 Percentile:82.87(Instruments & Instrumentation)We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400 C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.510 to 810 S/cm with increasing the fluence up to 410/cm, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310/cm (7 dpa). The dpa of 100 MeV Xe at 410/cm is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Sasase, Masato; Okayasu, Satoru; Kurata, Hiroki; Hojo, Kiichi
Journal of Electron Microscopy, 51(Supple), p.S235 - S238, 2002/00
no abstracts in English
Sasase, Masato; Sato, Takahiro*; Okayasu, Satoru; Kurata, Hiroki; Hojo, Kiichi
Advances in Superconductivity XII, p.314 - 316, 2000/00
no abstracts in English
Sasase, Masato*; Okayasu, Satoru; Kurata, Hiroki; Hojo, Kiichi
Surface & Coatings Technology, 103-104, p.360 - 364, 1998/00
no abstracts in English
Okubo, Nariaki; Tomobe, Masakatsu*; Ishikawa, Norito
no journal, ,
no abstracts in English