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Journal Articles

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 Times Cited Count:2 Percentile:85.72(Physics, Applied)

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