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5 center in 4H-SiCUmeda, Takahide*; Son, N. T.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janz
n, E.*
Materials Science Forum, 527-529, p.543 - 546, 2006/00
no abstracts in English
-SiCUmeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De
k, P.*; Son, N. T.*; Janzn, E.*
Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12
Times Cited Count：51 Percentile：85.12(Materials Science, Multidisciplinary)no abstracts in English
-SiCUmeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro
Physical Review B, 69(12), p.121201_1 - 121201_4, 2004/03
Times Cited Count：48 Percentile：84.01(Materials Science, Multidisciplinary)EI5 and EI6 centers in 4-SiC were studied using EPR. EI5 and EI6 centers were introduced by 3MeV-electron irradiation at 850 
C. EI5 and EI6 were reported to be carbon vacancy with positive charge and silicon snti-site with positive charge, respectively. As a result of the angle dependence and temperature dependence measurement, both sites were identified to be carbon vacancies with positive charge. The defference between EI5 and EI6 is explained in terms of the difference of sites (like 
-site and 
-site) located in 4-SiC.
C in dry oxygen ambient on silicon carbide and their thermal annealing effectsYoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04
no abstracts in English
symmetry in 
-type 4H-SiCMizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*
Physical Review B, 66(23), p.235202_1 - 235202_12, 2002/12
Times Cited Count：125 Percentile：95.55(Materials Science, Multidisciplinary)EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T
center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of 
C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C symmetry.
/4H-SiC(0001) interfaceYamashita, Kenya*; Kitabatake, Makoto*; Kusumoto, Osamu*; Takahashi, Kunimasa*; Uchida, Masao*; Miyanaga, Ryoko*; Ito, Hisayoshi; Yoshikawa, Masahito
Materials Science Forum, 389-393, p.1037 - 1040, 2002/00
Times Cited Count：3 Percentile：15.53(Materials Science, Multidisciplinary)no abstracts in English
0) face of 4H-SiCYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*
Materials Science Forum, 353-356, p.635 - 638, 2001/00
no abstracts in English
Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi
Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00
no abstracts in English
/4H-SiC interface by using high temperature hydrogen annealing at 1000CFukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito
Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998), p.100 - 101, 1998/00
no abstracts in English
