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Journal Articles

Electron paramagnetic resonance study of the ${it HEI}$4/${it SI}$5 center in 4H-SiC

Umeda, Takahide*; Son, N. T.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janz$'e$n, E.*

Materials Science Forum, 527-529, p.543 - 546, 2006/00

no abstracts in English

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4$$H$$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De$'a$k, P.*; Son, N. T.*; Janz$'e$n, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

 Times Cited Count:41 Percentile:83.58(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

EPR identification of two types of carbon vacancies in 4${it H}$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro

Physical Review B, 69(12), p.121201_1 - 121201_4, 2004/03

 Times Cited Count:46 Percentile:85.51(Materials Science, Multidisciplinary)

EI5 and EI6 centers in 4${it H}$-SiC were studied using EPR. EI5 and EI6 centers were introduced by 3MeV-electron irradiation at 850 $$^{circ}$$C. EI5 and EI6 were reported to be carbon vacancy with positive charge and silicon snti-site with positive charge, respectively. As a result of the angle dependence and temperature dependence measurement, both sites were identified to be carbon vacancies with positive charge. The defference between EI5 and EI6 is explained in terms of the difference of sites (like ${it k}$-site and ${it h}$-site) located in 4${it H}$-SiC.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C$$_{3nu}$$ symmetry in $$n$$-type 4H-SiC

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 66(23), p.235202_1 - 235202_12, 2002/12

 Times Cited Count:99 Percentile:94.87(Materials Science, Multidisciplinary)

EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T$$_{V2a}$$ center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of $$^{13}$$C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C$$_{3nu}$$ symmetry.

Journal Articles

Steam annealing effects on CV characteristics of MOS structures on (11$$bar{2}$$0) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

Materials Science Forum, 353-356, p.635 - 638, 2001/00

no abstracts in English

Journal Articles

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00

no abstracts in English

Journal Articles

Improvement of SiO$$_{2}$$/4H-SiC interface by using high temperature hydrogen annealing at 1000$$^{circ}$$C

Fukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito

Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998), p.100 - 101, 1998/00

no abstracts in English

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