Effects of a low-energy proton irradiation on n/p-AlInGaP solar cells

Lee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04

https://doi.org/10.1016/j.physb.2005.12.142

no abstracts in English

Defect observation of AlInGaP irradiated with 30 keV protons for multi-junction space solar cells

Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00

no abstracts in English

Negative-U-centers in 4H- and 6H-SiC detected by spectral light excitation

Weidner, M.*; Pensl, G.*; Nagasawa, Hiroyuki*; Schner, A.*; Oshima, Takeshi

Materials Science Forum, 457-460, p.485 - 488, 2004/10

no abstracts in English

Low energy proton-induced defects on n/p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Solar Energy Materials and Solar Cells, 75(1-2), p.327 - 333, 2003/01

https://doi.org/10.1016/S0927-0248(02)00176-9

n/p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n/p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm at RT. The carrier removal rate was estimated to be 6.1E4 cm from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Annealing behavior of vacancies and Z levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12

https://doi.org/10.1063/1.1426259

no abstracts in English

Deep-level transient spectroscopy analysis of proton-irradiated n/p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12

https://doi.org/10.1016/S0921-4526(01)00935-8

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12

https://doi.org/10.1016/S0921-4526(01)00772-4

no abstracts in English

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08

https://doi.org/10.1063/1.1384855

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

IRRADIATION INDECED DDEFECTS CONTAINING OXYGEN ATOMS IN GERMANIUM CRYSTALS AS STUDIED BY DLTS

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JAERI-M 84-091, 15 Pages, 1984/05

JAERI-M-84-091.pdf:0.57MB

no abstracts in English