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Journal Articles

Actively controlled oxidation of Cu{001} with hyperthermal O$$_{2}$$ molecular beam

Okada, Michio*; Moritani, Kosuke; Goto, Seishiro*; Kasai, Toshio*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Chemical Physics, 119(14), p.6994 - 6997, 2003/10

https://doi.org/10.1063/1.1615961
 Times Cited Count：42 Percentile：77.72(Chemistry, Physical)

The oxidation of Cu(001) with hyperthermal O$$_{2}$$ molecular beams was investigated using X-ray photoemission spectroscopy in conjunction with a synchrotron light source. The efficiency of oxidation is higher than that with ambient thermal O$$_{2}$$. Further oxidation under oxygen coverage larger than 0.5 ML occurs rather inefficiently even for the 2.3 eV beam irradiation. We found such slow oxidation of Cu corresponding to the initial stage of the Cu$$_{2}$$O formation can be interpreted in terms of a collision-induced-adsorption mechanism. The kinetics of the dissociative adsorption is well described using the first order kinetics in a simple Langmuir-type adsorption model.

JAEA Reports

Chemisorption of CH$$_{3}$$Cl on Si(001) surface under UHV condition

Imanaka, Soichi*; Okada, Michio*; Kasai, Toshio*; Teraoka, Yuden; Yoshigoe, Akitaka

JAERI-Tech 2003-066, 36 Pages, 2003/08

JAERI-Tech-2003-066.pdf:7.13MB

The reactions of organic molecules with a Si(001) surface play important roles in many applied fields such as LSI, molecular device, sensor, non-liner optical materials, catalysis, coating, preservation from decay, and so on. Especially, the dissociative adsorption of CH$$_{3}$$Cl is an important initial process in the production of diamond and silicon carbide thin films. However, it is required to control the orientation of CH$$_{3}$$Cl for the elucidation of the detailed mechanism of the dissociative adsorption. In the present experiments, we studied the dissociative adsorption of CH$$_{3}$$Cl on a clean Si(001) surface under ultra-high vacuum using Scanning Tunneling Microscopy (STM). We found, for the first time, that there are two reaction passes of CH$$_{3}$$Cl(g) to CH$$_{3}$$(a)+Cl(a) and CH$$_{3}$$Cl(g) to CH$$_{3}$$(a)+Cl(g) in the dissociative adsorption of CH$$_{3}$$Cl on the Si${001}$ surface.

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