JOPSS - Search Results

Cu precipitates were formed on Si(100) by 200 keV Cu ion implantation and subsequent annealing at 773 K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time. This shape evolution seemed to result from the epitaxial formation of Cu precipitates to minimize the interfacial energy between the precipitate and the Cu implanted substrate. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1 h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.

Journal Articles

Magnetic structure of spin-density waves in Cr(001)/Sn multilayers with periodic monatomic spacer layers of nonmagnetic Sn

Takeda, Masayasu; Mibu, Ko*; Shinjo, Teruya*; Endo, Yasuo*; Suzuki, Junichi

Physical Review B, 70(10), p.104408_1 - 104408_9, 2004/09

https://doi.org/10.1103/PhysRevB.70.104408

Times Cited Count：8 Percentile：40.09(Materials Science, Multidisciplinary)

Detailed magnetic structure of spin-density waves (SDWs) in epitaxial Cr(001)/Sn multilayer was investigated by neutron scattering combined with Mssbauer spectroscopic studies. Monatomic Sn layers were embedded in 240 nm thick Cr(001) films with varying the periodic spacing from 4.2 to 16.2 nm. All samples were revealed to be a commensurate antiferromagnetic (CAF) phase at 300 K. The CAF structures changed to incommensurate SDW states with complex waveforms whose wavelength are controlled by the artificial periodicity at low temperatures although the CAF structure in the sample with the period of 4.2 nm persisted even at 10 K. The phase transition depends on the thickness of the Cr layers intervening between Sn monatomic layers. An appreciable phase slip in the SDW was observed during the phase transition in the sample with the period of 10.2 nm. The SDW structure is discussed by taking account of the competing forces between the nesting of Fermi surface and a pinning of antinodes at the Sn monatomic layers.

Journal Articles

High-quality epitaxial TiO $_{2}$ thin films grown on -Al $_{2}$ O $_{3}$ substrates by pulsed laser deposition

Shinohara, Ryuji*; Yamaki, Tetsuya; Yamamoto, Shunya; Ito, Hisayoshi; Asai, Keisuke*

Journal of Materials Science Letters, 21(12), p.967 - 969, 2002/06

https://doi.org/10.1023/A:1016090110315

Times Cited Count：10 Percentile：38.66(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Preparation of TiO $_{2}$ -anatase film on Si(001) substrate with TiN and SrTiO $_{3}$ as buffer layers

Sugiharuto; Yamamoto, Shunya; Sumita, Taishi; Miyashita, Atsumi

Journal of Physics; Condensed Matter, 13(13), p.2875 - 2881, 2001/04

https://doi.org/10.1088/0953-8984/13/13/302

Times Cited Count：15 Percentile：60.90(Physics, Condensed Matter)

An epitaxial TiO $_{2}$ -anatase thin film was grown on the Si(001) substrate with SrTiO $_{3}$ /TiN as the buffer layers by pulsed laser deposition technique under an oxygen gas supply. The characterization of the epitaxial TiO $_{2}$ -anatase film was performed using the X-ray diffraction method. The crystallographic relationships between the TiO $_{2}$ -anatase film and SrTiO $_{3}$ /TiN buffer layers were analyzed by the -2 scan and pole figure measurement. The growth direction of the films was determined as $rm TiO_{2}langle 001rangle$ / $rm SrTiO_{3}langle 001rangle$ / / and their in-plane relationship $rm TiO_{2}{110}$ // $rm SrTiO_{3}{100}$ // // . The crystalline quality of TiO $_{2}$ -anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using 2.0 MeV $^{4}$ He beam.