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Gomi, Yuibi*; Takami, Kazusa*; Mizuno, Rurie*; Niikura, Megumi*; Yasuda, Ryuichi*; Deng, Y.*; Kawase, Shoichiro*; Watanabe, Yukinobu*; Abe, Shinichiro; Liao, W.*; et al.
IEEE Transactions on Nuclear Science, 72(8), p.2751 - 2762, 2025/08
Times Cited Count：4 Percentile：65.74(Engineering, Electrical & Electronic)The study of muon-induced soft errors in terrestrial settings remains underexplored even though the incidence of muon-induced soft errors tends to increas. In this study, we conducted positive and negative muon irradiation experiments on four types of 12-nm FinFET SRAMs. At the momentum where the SEU cross section peaks, 2-fin cells exhibit larger SEU cross sections than 1-fin cells for negative muons. Conversely, for positive muons, the SEU cross section is larger in 1-fin cells than in 2-fin cells due to the increased diffusion capacitance in 2-fin cells. We also performed the Monte Carlo simulations. The results suggest that a single sensitive volume with the same critical charge value cannot consistently reproduce the SEU cross sections for both types of muons.
Gomi, Yuibi*; Takami, Kazusa*; Mizuno, Rurie*; Niikura, Megumi*; Deng, Y.*; Kawase, Shoichiro*; Watanabe, Yukinobu*; Abe, Shinichiro; Liao, W.*; Tampo, Motonobu*; et al.
Proceedings of 23rd European Conference on Radiation and its Effects on Components and Systems (RADECS 2023)(Internet) , 4 Pages, 2023/09
Times Cited Count：2 Percentile：56.64(Engineering, Electrical & Electronic)It has been suggested that the effect of muon-induced soft errors will increase by shrinking of the semiconductor process. However, muon irradiation experiments for FinFETs has not been reported. We performed positive and negative muon irradiation experiments on 12-nm FinFET and 28-nm planar SRAMs at MUSE in J-PARC. The negative muon-induced single event upset (SEU) cross section is more than ten times larger than that of the positive muon. The negative muon-induced SEU cross section of FinFETs decreases by the same ratio as neutron-induced one compared to planar SRAMs.
Takami, Kazusa*; Gomi, Yuibi*; Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Matsumoto, Tetsuro*; Hashimoto, Masanori*
Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2023/00
Times Cited Count：3 Percentile：81.67(Engineering, Multidisciplinary)According to the test standard of JESD89, neutrons with energies higher than 10 meV are considered for calculating soft error rate (SER). However, neutrons whose energies are below 10 MeV exist in the terrestrial environment. This paper studies the characteristics of the single event upset (SEU) cross sections in 12- and 28-nm SRAMs induced by low-energy neutrons. Experimental results show that the SEU event cross sections of the 12-nm FinFET SRAM and 28-nm planar SRAM drop less significantly from 14.8 MeV to 6.0 MeV compared with 65-nm SRAM. This result shows that the importance of neutrons below 10 MeV elevates for terrestrial SER estimation for advanced SRAMs.
