Control of O adsorption and SiO desorption by incident energy of O molecules in the O/Si(001) surface reaction system

Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke

Atomic Collision Research in Japan, No.29, p.68 - 70, 2003/00

There are two surface chemical reaction modes in the O/Si(001) system, that is, oxide-layers formation and SiO desorption. We have found that these reaction modes could be selected by changing translational kinetic energy of incident O molecules.

O reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Yoshigoe, Akitaka

Atomic Collision Research in Japan, No.28, p.97 - 99, 2002/00

The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on HO-chemisorbed Si(001) surfaces depends on the O incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.

Build-up effect on obliquely incident pencil beam photon from 15 to 500keV into lead shield

Asano, Yoshihiro; Sugita, Takeshi*

JAERI-Research 96-001, 164 Pages, 1996/01

JAERI-Research-96-001.pdf:5.03MB

no abstracts in English

On the influence of incident energy of proton on chemical erosion of graphite

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Journal of Nuclear Materials, 116, p.200 - 205, 1983/00

https://doi.org/10.1016/0022-3115(83)90103-4

no abstracts in English