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Journal Articles

Silicon isotope separation utilizing infrared multiphoton dissociation of Si $_{2}$ F $_{6}$ irradiated with two-frequency CO $_{2}$ laser lights

Yokoyama, Atsushi; Oba, Hironori; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*

Applied Physics B, 79(7), p.883 - 889, 2004/11

https://doi.org/10.1007/s00340-004-1642-z

Times Cited Count：10 Percentile：44.25(Optics)

Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of Si $_{2}$ F $_{6}$ irradiated with two-frequency CO $_{2}$ laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, Si $_{2}$ F $_{6}$ with the $^{28}$ Si fraction of 99.4 % was obtained at 40.0 % dissociation of Si $_{2}$ F $_{6}$ after the simultaneous irradiation of 100 pulses with 966.23 cm $^{-1}$ photons (0.089 J/cm $^{2}$ ) and 954.55 cm $^{-1}$ photons (0.92 J/cm $^{2}$ ), while 1000 pulses were needed to obtain 99.0 % of $^{28}$ Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm $^{-1}$ (0.92 J/cm $^{2}$ ). The single-step enrichment factors of $^{29}$ Si and $^{30}$ Si increased with increasing Si $_{2}$ F $_{6}$ pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.