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Sumita, Taishi*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kuwajima, Saburo*
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.667 - 670, 2005/00
no abstracts in English
Lee, K. K.; Oshima, Takeshi; Saint, A.*; Kamiya, Tomihiro; Jamieson, D. N.*; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.489 - 494, 2003/09
Times Cited Count：23 Percentile：78.51(Instruments & Instrumentation)To obtain the information on radiation damage of 6H-SiC devices, ion beam induced charge collection (IBICC) for 6H-SiC schottky diodes irradiated with proton, alpha and carbon micro beam 10
to 10
ions/cm
was studied. No significant difference of degradation was observed between p- and n-substrates irradiated with 2MeV-alpha micro beam. The decrease in IBCC shows a good agreement with the calculation using non ionizing energy loss (NIEL). As a result of ion luminescence and ultra violet photo luminescence, the level of 2.32 eV was observed.
Kuboyama, Satoshi*; Shindo, Hiroyuki*; Hirao, Toshio; Matsuda, Sumio*
IEEE Transactions on Nuclear Science, 49(6), p.2684 - 2689, 2002/12
Times Cited Count：10 Percentile：53.43(Engineering, Electrical & Electronic)no abstracts in English
and electron irradiation pin photodiodeOnoda, Shinobu; Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Ito, Hisayoshi
Proceedings of 6th European Conference on Radiation and its Effects on Components and System (RADECS 2001) (CD-ROM), 5 Pages, 2002/00
no abstracts in English
