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Journal Articles

Coexistence of passive and active oxidation for O$$_{2}$$/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka

Applied Surface Science, 216(1-4), p.8 - 14, 2003/06

https://doi.org/10.1016/S0169-4332(03)00479-3
 Times Cited Count：6 Percentile：34.35(Chemistry, Physical)

The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O$$_{2}$$. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.

Journal Articles

Real-time observation of initial stages thermal oxidation on Si(001) surface by using synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden

Shinku, 46(5), p.424 - 428, 2003/05

https://doi.org/10.3131/jvsj.46.424

In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O$$_{2}$$(1$$times$$10$$^{-4}$$Pa) at the surface temperature region between 870K and 1120K, we have performed the ${it real-time}$ synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.

Journal Articles

Time-resolved photoelectron spectroscopy of oxidation on the Ti(0001) surface

Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*

Nuclear Instruments and Methods in Physics Research B, 200, p.376 - 381, 2003/01

https://doi.org/10.1016/S0168-583X(02)01726-3
 Times Cited Count：10 Percentile：54.74(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O$$_{2}$$ molecules

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 190(1-4), p.75 - 79, 2002/05

https://doi.org/10.1016/S0169-4332(01)00842-X
 Times Cited Count：12 Percentile：51.88(Chemistry, Physical)

no abstracts in English

Journal Articles

Real time observation on oxidation states on Si(001) surfaces induced by translational energy of O$$_{2}$$ using synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka; Teraoka, Yuden

Shinku, 45(3), p.204 - 207, 2002/03

https://doi.org/10.3131/jvsj.45.204

no abstracts in English

Journal Articles

In situ photoemission spectroscopy using synchrotron radiation for O$$_{2}$$ translational kinetic energy induced oxidation processes of partially-oxidized Si(100) surfaces

Teraoka, Yuden; Yoshigoe, Akitaka

Hyomen Kagaku, 22(8), p.530 - 536, 2001/08

https://doi.org/10.1380/jsssj.22.530

no abstracts in English

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